Rotational bands in 181Ta

High-spin states in ¹⁸¹Ta have been studied via the ¹⁷⁶Yb(¹¹B,α2n) reaction at 52 MeV using the PEX array and at 57 MeV using the NORDBALL array, with α-particle detection. The previously known, K^π=(7/2)⁺ ground state band and K^π=(9/2)⁻ band have been extended to spins (29/2)⁺ and (31/2)⁻, respectively. Two new one-quasiparticle bands, the K^π=(5/2)⁺ band built on the known (5/2)⁺ isomer and a K^π=((1/2)⁻) band have been observed. Two other rotational bands with three-quasiparticle structure, K^π=(15/2)⁻ and ((19/2)⁺ with π(7/2)[404]ν²(1/2)[510](9/2)[624] and π(9/2)[514]ν²(1/2)[510](9/2)[624] configurations, respectively, have been newly observed. The half-life of the K^π=((19/2)⁺) bandhead which decays to the head of the (15/2)⁻ band has been measured to be 140(36) ns. However, transitions from the ((19/2)⁺) state to the (15/2)⁻ band have not been observed. Received: 26 August 1998     

Computational experience with general equilibrium problems

We report on computational experience with an implementation of three algorithms for the general economic equilibrium problem. As a result we get that the projection algorithm for variational inequalities increases the size of solvable models by a factor of 5–10 in comparison with the classical homotopy method. As a third approach we implemented a simulated annealing heuristic which might be suitable to estimate equilibria for very large models.Supported by the German Research Association (Deutsche Forschungsgemeinschaft, SFB 303).     

Size dependence of self-diffusion in the hard-square lattice gas

A striking size dependence of the mean-square displacement of diffusing particles in the two-dimensional lattice gas of hard squares has been observed by Monte Carlo simulation. It is shown that the size effect is due to the formation of a stable cage structure in small lattices when the particle concentration is high. The formation of cages is governed by a new type of percolation problem related to bootstrap percolation.     

The Random Average Process and Random Walk in a Space-Time Random Environment in One Dimension

We study space-time fluctuations around a characteristic line for a one-dimensional interacting system known as the random average process. The state of this system is a real-valued function on the integers. New values of the function are created by averaging previous values with random weights. The fluctuations analyzed occur on the scale n ^1/4, where n is the ratio of macroscopic and microscopic scales in the system. The limits of the fluctuations are described by a family of Gaussian processes. In cases of known product-form invariant distributions, this limit is a two-parameter process whose time marginals are fractional Brownian motions with Hurst parameter 1/4. Along the way we study the limits of quenched mean processes for a random walk in a space-time random environment. These limits also happen at scale n ^1/4 and are described by certain Gaussian processes that we identify. In particular, when we look at a backward quenched mean process, the limit process is the solution of a stochastic heat equation.     

In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering

Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi_2.5Sr₂Ca₂Cu₃O_y in O₂ atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to T_c(0) }- 79 K. The critical current density of the films had values of up to j_c(50K)}- 10⁴ A/cm².     

Cylindrical spike model for the formation of diamondlike thin films by ion deposition

T /n_S of n_T rearrangements and n_S atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. n_T/n_S>1 is the optimum condition for diamondlike film growth. For aC films the ion energy dependence of n_T/n_S agrees well with the measured sp³ bond fraction. For Ar⁺-ion-assisted deposition of aC we find n_T/n_S>1 above 50 eV with no pronounced ion energy dependence. Furthermore, our model predicts optimum conditions for the formation of cubic boron nitride between 50 eV and 3 keV. Accepted: 14 October 1997