T-C模型中虚光子过程对光场压缩效应的影响

利用全量子理论,研究非旋波近似下TC模型中受激场的压缩效应.结果表明:非旋波近似下,由于虚光场的影响,Q的演化曲线出现了“小锯齿状”,表现为系统的量子噪声,随着ω和n的增大,量子噪声分别减小和增大,虚光子过程使光场的压缩程度明显加深;研究结果还揭示了原子场耦合系数λ及原子间耦合系数g与光场压缩效应的关系. 关键词： T-C模型 非旋波近似 压缩效应 量子噪声     

Differential algebraic equations with after-effect

In this paper, we are concerned with the solution of delay differential algebraic equations. These are differential algebraic equations with after-effect, or constrained delay differential equations. The general semi-explicit form of the problem consists of a set of delay differential equations combined with a set of constraints that may involve retarded arguments. Even simply stated problems of this type can give rise to difficult analytical and numerical problems. The more tractable examples can be shown to be equivalent to systems of delay or neutral delay differential equations. Our purpose is to highlight some of the complexities and obstacles that can arise when solving these problems, and to indicate problems that require further research.     

聚异丁烯高活性端基含量及相对分子质量测定方法的研究

综合使用核磁，VPO和近红外光谱分析技术对聚异丁烯活性端基含量以及相对分子质量的测定进行了详细研究，分别建立核测定聚异丁烯活性端基含量以及其他烯键含量和近红外光谱快速测量聚异聚丁烯活性端基含量。其他烯键含量和相对分子质量的分析方法。成对t检验结果表明，近红外光谱分析方法测定结果与核磁和VPO方法测定结果之间无显著性差异。     

0.18μm CMOS工艺栅极氧化膜可靠性的衬底和工艺依存性

用斜坡电压法(Voltage Ramp, V-ramp)评价了0.18μm双栅极 CMOS工艺栅极氧化膜击穿电量(Charge to Breakdown, Q_bd)和击穿电压(Voltage to Breakdown, V_bd). 研究结果表明，低压器件(1.8V)的栅极氧化膜(薄氧)p型衬底MOS电容和N型衬底电容的击穿电量值相差较小，而高压器件(3.3V)栅极氧化膜(厚氧)p衬底MOS电容和n衬底MOS电容的击穿电量值相差较大，击穿电压测试值也发现与击穿电量 关键词： 薄氧 可靠性 击穿电压 击穿电量     

Epitaxy: the motion picture

The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms—and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow—while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies.

It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both.     

泛函梯度数值计算的一种新方法—正交试验法

本文研究并揭示了L_(2~a)(2~(2~a-1))型正交表行(列)间的递推规律,提出了一种泛函梯度数值计算的新方法——正交试验法,该方法在计算速度和精度上优于直接梯度法;在通用性及节省内存方面优于伴随算子法。     

The two-dimensional quantum Euclidean algebra

The algebra dual to Woronowicz's deformation of the two-dimensional Euclidean group is constructed. The same algebra is obtained from SU _q (2) via contraction on both the group and algebra levels.