Muonic X-ray intensities in SF6 and in H2+SF6

With a high pressure gas target muonic F and S X-ray intensities in SF₆ and H₂+SF₆ have been measured. It was found that the distribution of muons between sulphur and fluorine is not at all equal to the ratio of the atomic numbers Z.     

The influence of coherence effects on measurements of saturable absorption with broadband radiation

For a gaussian broadband radiation field (multimode laser without phase-correlation) the bleaching behaviour of a homogeneously broadened two level system is investigated in dependence on the spectral width (δυ) of the field. Taking into consideration the coherent mode-interaction, originating from the nonstationary reaction of population inversion on the fluctuations of the radiation field, a decrease of the bleaching effect results as soon as the spectral width δυ becomes larger than ⊥₁ = 1/T₁ with T₁ the longitudinal relaxation time of the molecular transition concerned. Neglecting this effect in the analysis of broadband bleaching measurements can result in the unjustified assumption of an inhomogeneous broadening of the spectral band under consideration, which has consequences on the magnitude of the molecular absorption cross-section derived from these measurements.     

Contactless gating,surface charging and illumination effects in a buried Al<Subscript>0.24</Subscript>Ga<Subscript>0.76</Subscript>As/GaAs quantum well structure

The conductivity of an Al_0.24Ga_0.76As/GaAs quantum well was studied as a function of the surface charge generated by electron bombardment of the sample in the absence of an externally applied surface electric field. Under a suitable rate of electron irradiation, it was possible to completely shut off the conductive channel, implying a surface density . Light illumination quenches the increase of the resistivity, apparently due to photoemission from the metastable surface states. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime τ= 0.30 ±0.02 s. The average charging efficiency, is μ₀ ≃0.001. Surface charging is shown to be an effective method for contactless gating of field effect devices.     

Scaling and universality of integer quantum Hall plateau-to-plateau transitions

We have investigated the integer quantum Hall plateau-to-plateau transition in two-dimensional electrons confined to AlxGa(1-x)As-Al0.33Ga0.67As heterostructures over a broad range of Al concentration x. For x between 0.65% and 1.6%, where the dominant contribution to disorder is from the short-range alloy potential fluctuations, we observe a perfect power-law scaling in the temperature range from 30 mK to 1 K with a critical exponent kappa = 0.42 +/- 0.01.     

Long-distance diffusion of excitons in double quantum well structures

In this Letter we report on lateral diffusion measurements of excitons at low temperature in double quantum wells of various widths. The structure is designed so that excitons live up to 30 micros and diffuse up to 500 microm. Particular attention is given to establishing that the transport occurs by exciton motion. The deduced exciton diffusion coefficients have a very strong well width dependence, and obey the same power law as the diffusion coefficient for electrons.     

Strongly enhanced hole-phonon coupling in the metallic state of the dilute two-dimensional hole gas

We have studied the temperature dependent phonon emission rate P(T) of a strongly interacting (r(s) > or =22) dilute 2D GaAs hole system using a standard carrier heating technique. In the still poorly understood metallic state, we observe that P(T) changes from P(T) approximately T5 to P(T) approximately T7 above 100 mK, indicating a crossover from screened piezoelectric (PZ) coupling to screened deformation potential (DP) coupling for hole-phonon scattering. Quantitative comparison with theory shows that the long range PZ coupling between holes and phonons has the expected magnitude; however, in the metallic state, the short range DP coupling between holes and phonons is almost 20 times stronger than expected from theory. The density dependence of P(T) shows that it is easier to cool low-density 2D holes in GaAs than higher density 2D hole systems.     

Organic homojunction diodes with a high built-in potential: interpretation of the current-voltage characteristics by a generalized Einstein relation

We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials.     

Imaging transport resonances in the quantum Hall effect

We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a dc bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island in the IS. These islands enable resonant tunneling across the IS, enhancing its conductance by more than 4 orders of magnitude. The images provide a quantitative measure of disorder and suggest resonant tunneling as the primary mechanism for transport across ISs.     

Organic p-i-n solar cells

We introduce a p-i-n-type heterojunction architecture for organic solar cells where the active region is sandwiched between two doped wide-gap layers. The term p-i-n means here a layer sequence in the form p-doped layer, intrinsic layer and n-doped layer. The doping is realized by controlled co-evaporation using organic dopants and leads to conductivities of 10^-4 to 10^-5 S/cm in the p- and n-doped wide-gap layers, respectively. The photoactive layer is formed by a mixture of phthalocyanine zinc (ZnPc) and the fullerene C₆₀ and shows mainly amorphous morphology. As a first step towards p-i-n structures, we show the advantage of using wide-gap layers in M-i-p-type diodes (metal layer–intrinsic layer–p-doped layer). The solar cells exhibit a maximum external quantum efficiency of 40% between 630-nm and 700-nm wavelength. With the help of an optical multilayer model, we optimize the optical properties of the solar cells by placing the active region at the maximum of the optical field distribution. The results of the model are largely confirmed by the experimental findings. For an optically optimized device, we find an internal quantum efficiency of around 82% under short-circuit conditions. Adding a layer of 10-nm thickness of the red material N,N-dimethylperylene-3,4:9,10-dicarboximide (Me-PTCDI) to the active region, a power-conversion efficiency of 1.9% for a single cell is obtained. Such optically thin cells with high internal quantum efficiency are an important step towards high-efficiency tandem cells. First tandem cells which are not yet optimized already show 2.4% power-conversion efficiency under simulated AM 1.5 illumination of 125 mW/cm² . PACS 73.61.Ph; 78.30.Jw; 89.30.Cc