Ab initio study of the Trinem antibiotic Sanfetrinem GV104326

We present a theoretical calculation of trinem antibiotic sanfetrinem GV104326 and its cis-isomer of proton in β-lactam ring and methoxy inversion isomer. Ab initio Hartree Fock method is employed to calculate the geometry optimization; optimized parameters, bond lengths, bond angles and dihedral angles of isomers. We also calculated the vibrational frequencies, the IR intensities, the Raman activities and the thermochemical parameters. Mulliken population analysis is used to compare bond strength of an active site. These results are compared with available experimental data and other related theoretical calculations. The calculated IR spectra are in good agreement with experiments. Calculated geometrical and conformational structures of sanfetrinem and its isomers support the previous study of the geometrical requirements for the antibacterial activities. The significance of the rotational conformation of the carboxyl group to chemical reactivities is discussed.     

Monolayer assembly and striped architecture of Co nanoparticles on organic functionalized Si surfaces

We present a new strategy to fabricate a monolayer assembly of Br-terminated Co nanoparticles on functionalized Si surfaces by using chemical covalent bonding and microcontact printing method. Self-assembled monolayers (SAMs) of the Co nanoparticles formed on the hydroxyl-terminated Si surface exhibit two-dimensional island networks with locally ordered arrays via covalent linkage between nanoparticles and surface. On the other hand, SAMs of the nanoparticles on the aminopropyl-terminated Si surface show an individual and random distribution over an entire surface. Furthermore, we have fabricated striped architectures of Co nanoparticles using a combination of microcontact printing and covalent linkage. Microcontact printing of octadecyltrichlorosilane and selective covalent linkage between nanoparticles and functionalized Si surfaces lead to a hybrid nanostructure with selectively assembled nanoparticles stripes on the patterned functionalized Si surfaces. PACS 81.07.Ta; 61.46.+w; 81.16.Dn; 81.16.Be; 68.37.Hk; 82.80.Pv     

Morphological changes during heating in poly(L‐lactic acid)/poly(butylene succinate) blend systems as studied by synchrotron X‐ray scattering

Blends of poly(L ‐lactic acid) (PLA) and poly(butylene succinate) (PBS) were prepared in various compositions via melt mixing, and the morphological changes were investigated with differential scanning calorimetry and synchrotron wide‐angle and small‐angle X‐ray scattering techniques at a heating rate of 10 °C/min. Differential scanning calorimetry thermograms of PLA/PBS blends showed two distinct melting peaks over the entire composition range. The exothermal peak for PLA shifted significantly to a lower temperature and overlapped with that of PBS around 100 °C. A depression of the melting point of the PLA component via blending was observed. The synchrotron wide‐angle X‐ray scattering during heating revealed that there was no cocrystallization or crystal modification via blending. The synchrotron small‐angle X‐ray scattering data showed that well‐defined double‐scattering peaks (or peaks with a clear scattering shoulder) appeared during crystallization, indicating that this system possessed dual lamellar stacks. These peaks were deconvoluted into two components with a peak separation computer program, and then the morphological parameters of each component were obtained by means of the correlation function. The long period and average lamellar thickness of the two components before melting decreased with an increasing content of the other polymer component. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 1931–1939, 2002     

Preparation and characterization of a nanoscale poly(vinyl alcohol) fiber aggregate produced by an electrospinning method

Nanoscale poly(vinyl alcohol) (PVA) fiber (100–500 nm) aggregates were prepared with an electrospinning technique. Additionally, a chemical crosslinking method was used to crosslink the nanoscale PVA fiber aggregates. Differential scanning calorimetry, wide‐angle X‐ray diffraction, and scanning electron microscopy techniques were employed to characterize the PVA fiber aggregates. The different crosslinking densities of the PVA fiber aggregates were obtained through the control of the weight percentage of glyoxal to PVA. The crosslinking densities due to heat treatment and chemical crosslinking were studied. The influence of heat treatment could be neglected in contrast to chemical crosslinking when the curing temperature was 120 °C. The primary factor that affected the crosslinking density was the volume of the chemical crosslinking agent. The results showed that the properly crosslinked PVA fiber aggregates had better antiwater solubility and mechanical properties than the noncrosslinked PVA fiber aggregates. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 1261–1268, 2002     

Diffusion of chromium in chrysoberyl

Cr³⁺ diffusion in chrysoberyl (BeAl₂O₄) irradiated by H⁺ ions and electrons has been studied and compared with diffusion in non-irradiated samples. Chrysoberyl crystals were irradiated with 6 MeV H⁺ ions to fluencies of 1×10¹⁶ cm^–2 for 25 min and with 10 MeV electrons to fluencies of 2×10¹⁷ cm^–2 for 1 h. Three different types of samples, which were doped with Cr³⁺, were annealed in horizontal alumina tube furnaces by 50 K intervals in the temperature range from 1773 to 1923 K for 200 h. Scanning electron microscope–energy dispersive X-ray spectrometer (SEM–EDX) was used to measure the diffusion. Arrhenius equations for the diffusion coefficient for Cr³⁺ in the temperature range 1773–1923 K were developed:     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.