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91.
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Latent macroscopic defects in silicon are detected by electrical and electron microscope measurements. They lead to anomalous temperature dependence of the Fermi level position and growth in the hole capture coefficient. A level with energy of 0.55 eV measured from the conduction zone controls the recombination process. It is proposed that macroscopic defects develop upon association of oxygen-silicon vacancy complexes. Action of an electron beam leads to reversible changes which increase upon multiple scanning, affecting the value of the diffusion length.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 71–75, April, 1991.  相似文献   
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We prove theorems that characterize the classes of functions whose best approximations by algebraic polynomials tend to zero with given order. We construct approximations of solutions of operator-differential equations by polynomials in the inverse operator. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 11, pp. 1506–1516, November, 1998.  相似文献   
98.
The asymptotic behavior of the spectra for large values of the scattering vector for the case of elastic multiple small-angle neutron scattering (SANS) is investigated theoretically and experimentally. An expansion of the spectrum in terms of the reciprocal of the magnitude of the momentum transfer is obtained taking account of the influence of the instrumental line. It is shown that, to within some factor, the leading term of the expansion is identical to the differential single-scattering cross section averaged over a statistical ensemble of particles; several subsequent terms in the expansion are calculated and the range of applicability of the resulting expressions is determined. The asymptotic behavior of the multiple SANS spectrum is measured, using a two-crystal neutron spectrometer, for samples of an HTSC ceramic, the alloy Fe-Ni, and Al powder. The agreement between the experimental results and the theoretical predictions is analyzed. Zh. éksp. Teor. Fiz. 114, 2194–2203 (December 1998)  相似文献   
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Films of nonuniform Cu100−xCox alloys with x = 6, 11, 20, and 35 at. %, obtained by electrolytic deposition, are investigated using quantum magnetometry in fields of up to 5.5 T and temperatures of 2–300 K. In all the compositions a characteristic feature is the deviation from pure superparamagnetic behavior, which increases as the annealing of the films and their cobalt content increase. Institute of Solid State and Semiconductor Physics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 60–62, March, 1998.  相似文献   
100.
Results are presented for experimental studies of the static current-voltage characteristics of tunneling MIS diodes based on n-type gallium arsenide. It is shown that the forward branch of the current-voltage characteristics can be used to determine the dependence of the surface potential at the dielectric-semiconductor interface on the voltage and the distribution of the surface state density over energy in the forbidden band. The results of studies of these dependences for diodes prepared by thermal annealing at various temperatures are given. The possible causes of changes in the forward and reverse current, and the dependence of the surface potential on the voltage and distribution of surface state density in energy under the action on the diodes of a gaseous mixture containing hydrogen are analyzed. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 69–83, January, 1998.  相似文献   
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