The effect of gamma irradiation and shelf aging in air on the oxidation of ultra-high molecular weight polyethylene

This study has investigated the effect of shelf aging, for up to one year in air, on the properties of gamma-irradiated ultra-high molecular weight polyethylene (UHMWPE). A variety of techniques were used to characterize the properties of treated samples. Differential scanning calorimetery (DSC) was used to characterize the morphology. The extent of cross-linking in a polymer network was detected by swelling measurements. The durometer hardness test was used to measure the relative hardness of this material, and changes in density were also measured. Results from all these measurements were combined to explain the changes in the microstructure of the aged, irradiated UHMWPE. This study shows that crystallinity is increased with radiation dose and with aging due to chain scission, which leads to a reduction in the molecular weight of the material. This allows the chains to rearrange to form crystalline regions. Positron annihilation lifetime spectroscopy confirms these conclusions. Fractional free volumes have been deduced from lifetime parameters, which correlate with the data obtained by the other techniques.     

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co₂GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co₂GaAs phase at the interface.     

Propagation of a focused light beam in a circuital system of tunnel-coupled waveguides

The propagation of a pencil beam in a circuital system of tunnel-coupled waveguides is considered. It is shown that the beam periodically focuses into a point when moving along the trajectory. A maximal number of waveguides supporting the propagation of the beam can be estimated in simple terms. The cross-sectional area of the waveguides can be subdivided into three zone with the beam pulsing only in the central one.     

Structure of (Ba0.7Sr0.3)TiO3 films prepared by chemical solution deposition during crystallization on a sublayer

Barium strontium titanate (BST) films on Si-SiO₂-Ti-Pt substrates are prepared by chemical solution deposition upon crystallization on a sublayer. The structure of the BST films is investigated using transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction analysis.     

Nonlinear-optical and micro-Raman diagnostics of thin films and nanostructures of ABO3 ferroelectrics

Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering.     

Electric currents generated by space-charge waves in high-resistivity semiconductors

Currents in high-resistivity semiconductors arising due to the rectification of space-charge waves are theoretically studied. Attention is primarily focused on the situation where the effective trap concentration is low. It is shown that, in this case, the dispersion law of trap-recharging waves changes from the inverse proportionality to a linear law and the drift waves no longer exist. In crystals with bipolar conduction, there are two modes of trap-recharging waves with a linear dispersion law. The dc and ac currents are found for the first time as functions of the trap concentration, the mobility and lifetime of carriers, the wavenumber of space-charge waves, and the applied electric field.     

Metallic films forming on the surface of alkali-halide crystals during thermal diffusion of intracrystalline immpurities

It was detected for the first time that films consisting of a transition-metal-based structure form (via thermal diffusion of intracrystalline impurities) on the surface of alkali-halide (LiF, NaF) crystals activated by transition metals Co, Ni, or Mn. The thickness, density, and composition of the films are shown to be different, depending on the heat treatment conditions. The crystals were annealed at temperatures varying from 473 to 1073 K in vacuum and air. The surface structures forming upon annealing in vacuum exhibit magnetic properties. The films were studied by optical, x-ray fluorescence, and electron spectroscopy to reveal the mechanisms of transition-metal film formation during thermal annealing.     

Electrochemical formation and composition analysis of Zn x Cd1-x Se solid solutions

The direct growth of ZnSe–CdSe solid solution onto metallic cathodes by electrodeposition from acidic aqueous sulphate solutions is described. The plating process is studied by simple voltammetry, while the structure and composition of the electrolytic deposits are investigated by X-ray diffraction. The experimental d-spacing values of the as-grown mixed lattice are compared to data from reference Zn _x Cd_1-x Se pellets of standard composition, produced by a sintering method. The findings are supplemented with energy-dispersive X-ray (EDX) elemental analysis. Thereupon, the variation of the mole fraction x in Zn _x Cd_1-x Se, and the solid phase constitution of the electrodeposits are determined and correlated to the electrochemical conditions of growth. The resulting films contain admixtures of CdSe compound and metallic Cd.     

High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy

We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm²/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (N_s) for the first time. N_s increased from 1.0×10¹² to 2.7×10¹³ cm⁻² when the Al composition increased from 0.78 to 0.89.