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961.
High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO2 deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage VTH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μEF) of OTFT device increased with the increase of VDS, but the μEF of OTFT device increased and then decreased with increased VGS when VDS was kept constant. When VDS was --50V, on/off current ratio was 0.48× 105 and subthreshold slope was 0.44V/dec. The μEF was 1.10cm2/(V.s), threshold voltage was --2.71V for the OTFT device.  相似文献   
962.
This paper studies the narrow spectral feature appearing in a four-level system coupled by two strong coherent fields and probed by a weak laser field. The linewidth is examined as a function of the Rabi frequencies of coupling fields, and the result is explained by using the dressed-state formalism.  相似文献   
963.
We propose a scheme to eliminate the effect of non-nearest-neighbor qubits in preparing cluster state with double-dot molecules. As the interaction Hamiltonians between qubits are Ising-model and mutually commute, we can get positive and negative effective interactions between qubits to cancel the effect of non-nearest-neighbor qubits by properly changing the electron charge states of each quantum dot molecule. The total time for the present multi-step cluster state preparation scheme is only doubled for one-dimensional qubit chain and tripled for two-dimensional qubit array comparing with the time of previous protocol leaving out the non-nearest-neighbor interactions.  相似文献   
964.
An explicit thermoelastic model is developed to describe the photothermal deformation of a coated sample excited by a cw modulated laser beam with a top-hat profile. The surface displacement obtained with this explicit model is compared to that obtained by an approximate model developed by Reichling and Gr?nbeck (J. Appl. Phys. 75, 1914 (1994)). Both thermoelastic models are then applied in a Fresnel diffraction based surface thermal lens (STL) theory. Numerical calculations are performed to investigate the differences between the explicit and approximate models in both surface displacement and STL signal. The simulation results show that the approximate model over-estimates the surface displacement and the corresponding STL signal amplitude. A decrease in the thermal diffusion length reduces the differences between the results obtained with the two thermoelastic models.  相似文献   
965.
The(2 1)-dimensional nonlinear Schr(o)dinger(NLS)equation with spatially inhomogeneous nonlinearities is investigated,which describes propagation of light in(2 1)-dimensional nonlinear optical media with inhomogeneous nonlinearities.New types of optical modes and nonlinear effects in optical media are presented numerically.The results reveal that the regular split of beam can be obtained in (2 1)-dimensional nonlinear optical media with inhomogeneous nonlinearities,by adjusting the guiding parameter.Furthermore,the stability of beam regular split is discussed numerically,and the results reveal that the beam regular split is stable to the finite initial perturbations.  相似文献   
966.
25 fs pulses with energy up to 0.8 mJ from a multi-pass amplifier system have been spectrally broadened from 460 nm to 950 nm due to strong self-phase modulation (SPM) effect in a gas filled hollow fiber. Using a set of chirped mirrors, the ultra-broadband dispersion compensation was achieved, and the compressed pulses reached their transform limit. Under optimized conditions we achieved pulses with duration of 5.1 fs and with energy of 400 μJ, corresponding to the peak power up to 80 GW. Supported by the National Natural Science Foundation of China (Grant Nos. 60608003, 60490280, 60225005 and 60621063)  相似文献   
967.
基于SOS的脉冲功率源技术新进展   总被引:3,自引:10,他引:3       下载免费PDF全文
 研制了基于SOS的胡杨200和胡杨700脉冲功率源。给出了胡杨200和胡杨700的电路原理、组成结构和实验波形。介绍了在SOS脉冲功率源上开展的高重复频率强流电子束产生、长寿命阴极实验、绝缘介质的高重复频率击穿实验和低引导磁场无箔二极管等实验研究进展。经测试,胡杨200在2 kHz重复频率、负载阻抗200 Ω下,输出电压200 kV,脉冲宽度约35 ns,平均输出功率大于10 kW;在300 Hz条件下可连续运行。胡杨700同样为全固态脉冲功率源,其设计指标:输出电压700 kV,电流5 kA,脉冲宽度约40 ns;经初步调试在150 Ω电阻负载上单脉冲输出指标达到660 kV,4.4 kA,脉宽约70 ns。  相似文献   
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