A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

钚气溶胶环境中惰性气体氪迁移过程研究

放射性气体的安全性问题是涉及反应堆运行中必需研究的重要问题.因此在钚气溶胶环境中,对钚材料裂变产生的放射性气体裂变产物,需要研究其在钚气溶胶环境中的迁移过程.对放射性惰性气体Kr87,Kr88的实验测量数据进行了具体分析.依据它们具有钚材料直接裂变和作为固体裂变产物子体两种来源这一物理特性,在不同的制样时间对Kr87/Kr88比值变化规律进行分析.确立了这两种来源的在钚气溶胶环境中的物理图像和迁移过程的物理模型,并与实验数据进行比较以验证模型的正确性. 关键词： 钚气溶胶 气体裂变产物 放射性Kr87/Kr88 迁移过程     

自对耦无序分布随机链Potts模型的临界普适性研究

以蒙特卡罗模拟方法对自对耦分布二维随机链q态Potts模型的短时临界行为进行了数值研究.利用初始非平衡演化阶段存在的普适幂指数和有限体积标度行为，数值模拟了在不同形式随机分布时q＝3和q＝8态Potts模型磁临界指数η和动力学临界指数z.计算结果发现η不依赖于自对偶无序分布的具体形式， 从而以数值方法给出了一个关于淬火掺杂自旋系统的临界普适行为的验证. 关键词： 随机链Potts模型 动力学蒙特卡罗模拟 临界普适性     

Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors

We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse.     

非晶/微晶两相硅薄膜电池的计算机模拟

在对不同晶相比硅薄膜的实验研究的基础上，利用有效介质理论估算了这种两相材料的光吸 收系数、迁移率寿命乘积及带隙宽度等参量，计算机模拟了不同结晶比硅薄膜电池的伏安特 性及光谱响应；结果为随着本征层微晶成分的增多，电池的开路电压逐渐减小，短路电流逐 渐增大，本征层的最佳厚度逐渐增大，填充因子有降低的趋势，电池的效率随晶相比的增大 而减小. 电池的光谱响应曲线表明，随晶相比的增大电池的长波响应明显提高. 根据这些模 拟结果，分析讨论了在考虑Lambertian背反射的情况下，非晶/微晶叠层电池的底电池采用 晶相比为40％—50％的两相硅薄膜材料做本征层是最佳选择. 关键词： 两相硅薄膜 太阳能电池 计算机模拟     

A growth kinetics model of rate decomposition for Si1-xGex alloy based on dimer theory

According to the dimer theory on semiconductor surface and chemical vapor deposition(CVD) growth characteristics of Si1-xGex, two mechanisms of rate decomposition and discrete flow density are proposed. Based on these two mechanisms, the Grove theory and Fick’s first law, a CVD growth kinetics model of Si1-xGex alloy is established. In order to make the model more accurate, two growth control mechanisms of vapor transport and surface reaction are taken into account. The paper also considers the influence of the dimer structure on the growth rate. The results show that the model calculated value is consistent with the experimental values at different temperatures.     

Improved crystal quality of GaN film with the in-plane lattice-matched Ino.17Alo.s3N interlayer grown on sapphire substrate using pulsed metal-organic chemical vapor deposition

We report on an improvement in the crystal quality of GaN film with an Ino.17Alo.83N interlayer grown by pulsed metal-organic chemical vapor deposition, which is in-plane lattice-matched to GaN films. The indium composition of about 17% and the reductions of both screw and edge threading dislocations （TDs） in GaN film with the InA1N interlayer are estimated by high resolution X-ray diffraction. Transmission electron microscopy （TEM） measurements are employed to understand the mechanism of reduction in TD density. Raman and photoluminescence measurements indicate that the InA1N interlayer can improve the crystal quality of GaN film, and verify that there is no additional residual stress induced into the GaN film with InA1N interlayer. Atomic force microscopy measurement shows that the InA1N interlayer brings in a smooth surface morphology of GaN film. All the results show that the insertion of the InA1N interlayer is a convenient method to achieve excellent crystal quality in GaN epitaxy.     

能带论自洽LMTO方法计算金属铜的零温物态方程

 用密度泛函框架下的自洽LMTO方法，在计算一系列晶格常数的Cu的能带结构的基础上，计算了Cu的零温物态方程。压缩度为1.0～4.5。计算结果与两种基于实验数据的半经验方法所得结果以及Albers等人的计算结果进行了比较，其高压部分亦与带量子交换修正的TFC模型结果作了比较，说明计算结果是合理的。进一步的研究可为修正半经验方法提供依据。弄清与TFC理论的异同，对多体系统相互作用有更进一步的了解。     

He+H2+→HeH++H反应的从头算势能面

运用多参考组态相互作用(MRCI)方法及aug-cc-pv5z基组构造了HeH+2体系基态(12A′)从头算势能面.采用多体展开法共拟合了8840个能量点,拟合误差为0.0677 Kcal/mol.基于新势能面,采用准经典轨线方法计算了碰撞能在0～2 eV范围内的积分反应截面,计算结果与实验结果符合较好.