Field optimized initial state based control of photodissociation

A new scheme for controlling photodissociation through preparation of a variationally optimized linear superposition of field free vibrational eigenstates is applied for selective control of IBr and HI dissociation. The dependence of photodissociation on various field parameters and initial conditions is examined to investigate the mechanistic basis of selective control. The parametric equations of motion approach for determining vibrational dynamics as a function of field parameters without having to solve the time dependent Schrödinger equation explicitly for each field parameter separately is outlined and its use to identify field characteristics which will provide the requisite population mix represented by the optimal linear superposition of vibrational states is advocated.     

Crystal structure and magnetic ordering of RNi Si compounds

The element distributions and the magnetic ordering behaviour of compounds RNi₁₀Si₂ (R = Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize in an ordered variant of the ThMn₁₂ structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively, corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn₁₂ structure. TbNi₁₀Si₂ orders antiferromagnetically below T _N = 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi₁₀Si₂ do not carry any ordered magnetic moments. The compounds with R = Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively. Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002     

Properties of nonparametric estimators of autocovariance for stationary random fields

Summary We introduce nonparametric estimators of the autocovariance of a stationary random field. One of our estimators has the property that it is itself an autocovatiance. This feature enables the estimator to be used as the basis of simulation studies such as those which are necessary when constructing bootstrap confidence intervals for unknown parameters. Unlike estimators proposed recently by other authors, our own do not require assumptions such as isotropy or monotonicity. Indeed, like nonparametric function estimators considered more widely in the context of curve estimation, our approach demands only smoothness and tail conditions on the underlying curve or surface (here, the autocovariance), and moment and mixing conditions on the random field. We show that by imposing the condition that the estimator be a covariance function we actually reduce the numerical value of integrated squared error.     

Quantitative electron probe microanalysis for the characterization of thin carbon-boron layers in fusion devices

Summary The first wall of the fusion device TEXTOR at the Forschungszentrum Jülich has been coated in situ with an amorphous hydrogen rich carbon/boron film (a-C/B:H) which reduces plasma impurities caused by the plasma surface interaction. The results of the coating process of the 35 m² large inner wall surface have been controlled by a recently developed modification of the quantitative electron probe microanalysis, which has been applied to 12 samples from specified positions inside the tokamak. The quantification itself is based on a Monte Carlo simulation of electron trajectories providing very accurate results for X-ray intensities emitted by elements present in the electron bombarded sample. The Monte Carlo results are used in the present work to calibrate the measured X-ray intensities emitted by boron and carbon from the a-C/B:H layers deposited on pure silicon substrates. As a result the total deposited mass of the layer per area unit as well as the composition of the layers (except hydrogen) could be determined very accurately. The relative errors were less than 7%. The limit of detectability were found to be in the range of one monolayer for boron as well as for carbon.     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia