复流形局部q-凸楔形上带权的同伦公式

本文得到复流形局部q-凸楔形上(r,s)型微分形式的带权的同伦公式和(r,s)型的方程的带权的连续解,并给出(r,s)型微分形式的不含边界积分的新的带权的同伦公式和(r,s)型的方程的新的带权的连续解.这些新的带权公式尤其适用于具有非光滑边界的局部q-凸楔形,这时不但可以避免边界积分的复杂估计,而且积分密度也不必在边界有定义,只要在区域上有定义就行.其次,引进权因子,带权的积分公式在应用上(比如在函数的插值方面)具有更大的灵活性.     

Time resolved spectroscopic NMR imaging using hyperpolarized Xe

We have visualized the melting and dissolution processes of xenon (Xe) ice into different solvents using the methods of nuclear magnetic resonance (NMR) spectroscopy, imaging, and time resolved spectroscopic imaging by means of hyperpolarized ¹²⁹Xe. Starting from the initial condition of a hyperpolarized solid Xe layer frozen on top of an ethanol (ethanol/water) ice block we measured the Xe phase transitions as a function of time and temperature. In the pure ethanol sample, pieces of Xe ice first fall through the viscous ethanol to the bottom of the sample tube and then form a thin layer of liquid Xe/ethanol. The xenon atoms are trapped in this liquid layer up to room temperature and keep their magnetization over a time period of 11 min. In the ethanol/water mixture (80 vol%/20%), most of the polarized Xe liquid first stays on top of the ethanol/water ice block and then starts to penetrate into the pores and cracks of the ethanol/water ice block. In the final stage, nearly all the Xe polarization is in the gas phase above the liquid and trapped inside the pores. NMR spectra of homogeneous samples of pure ethanol containing thermally polarized Xe and the spectroscopic images of the melting process show that very high concentrations of hyperpolarized Xe (about half of the density of liquid Xe) can be stored or delivered in pure ethanol.     

一种高温超导磁悬浮装置

本文介绍一个基于倒挂吸引式(EMS)原理的高温超导磁悬浮试验装置．这个装置由高温超导磁体、单臂梁金属导轨、位置传感器、控制电路等组成．绕制超导磁体线圈所用的是Bi-2223／Ag高温超导线材．超导磁体工作在激磁电流为3．2A时，在5mm的空气间隙中产生0．21T的磁通密度，与单臂梁金属导轨可产生72N的垂直悬浮力．通过引入压控电流源，利用常规的超前一滞后校正实现了该磁悬浮装置的稳定悬浮和鲁棒控制，在负载变化87．5%的情况下仍能实现超导磁悬浮装置的稳定悬浮．该试验装置首次验证了高温超导线圈的可控性问题，为进一步探索高温超导线圈用于磁悬浮轨道交通系统的可行性打下了基础．     

Synthesis and characterization of a novel nano-scale magnetic solid base catalyst involving a layered double hydroxide supported on a ferrite core

A nano-scale magnetic solid base catalyst MgAl-OH-LDH/MgFe₂O₄ (where LDH denotes layered double hydroxide) composed of MgAl-OH-LDH Brønsted base catalytic layers coated on MgFe₂O₄ spinel cores has been prepared. A magnetic precursor MgAl-CO₃-LDH/MgFe₂O₄ was prepared by a method involving separate nucleation and aging steps, and subsequently calcined to give a mixed metal oxide composite MgAl(O)/MgFe₂O₄ which was rehydrated to give MgAl-OH-LDH/MgFe₂O₄. The structure and magnetic properties of the nano-scale magnetic solid base MgAl-OH-LDH/MgFe₂O₄, together with those of the magnetic precursor MgAl-CO₃-LDH/MgFe₂O₄ and MgFe₂O₄ were characterized by XRD, XPS, low temperature N₂ adsorption and vibrating sample magnetometry (VSM). The MgAl-OH-LDH/MgFe₂O₄ composite possesses a mesoporous structure with pore size ranging from 2 to 20 nm with particle size mainly in the range 35-130 nm. The catalytic properties of MgAl-OH-LDH/MgFe₂O₄ were evaluated using the self-condensation of acetone at 273 K as a probe reaction. The results showed that the conversion of acetone to diacetone alcohol reached the thermodynamic equilibrium value of 23% at 273 K. The catalyst was easily recovered through application of an external magnetic field, and when the reclaimed catalyst was used in a second run for the same reaction, the reactivity remained unchanged.     

<Emphasis Type="Italic">L</Emphasis><Subscript>1</Subscript> linear interpolator for missing values in time series

We propose a minimum mean absolute error linear interpolator (MMAELI), based on theL ₁ approach. A linear functional of the observed time series due to non-normal innovations is derived. The solution equation for the coefficients of this linear functional is established in terms of the innovation series. It is found that information implied in the innovation series is useful for the interpolation of missing values. The MMAELIs of the AR(1) model with innovations following mixed normal andt distributions are studied in detail. The MMAELI also approximates the minimum mean squared error linear interpolator (MMSELI) well in mean squared error but outperforms the MMSELI in mean absolute error. An application to a real series is presented. Extensions to the general ARMA model and other time series models are discussed. This research was supported by a CityU Research Grant and Natural Science Foundation of China.     

Some sufficient conditions for oscillation of impulsive delay hyperbolic systems with Robin boundary conditions

This paper deals with the oscillation problems of delay hyperbolic systems with impulses. Some sufficient conditions for oscillations of impulsive delay hyperbolic systems with Robin boundary conditions are obtained and the criteria of oscillation of the systems are established.     

数学建模与素质教育

面对二十一世纪知识经济的挑战 ,我国高等教育模式应由应试教育 ,专业教育向素质教育转变 ,培养学生自主意识 ,效率意识 ,竞争意识 ,创新意识和民主意识 ,即高校教育应重视大学生的创新能力、实践能力和创业精神 ,普遍提高大学生的人文素质和科学素质 .本文拟就提高大学生素质的有效层面 ,对开展数学建模教学与实践进行深入分析 ,以窥探数学建模与素质教育之关系 .在深入把握数学建模教学与实践内涵的同时 ,分析得出这种以不打扰现行正常秩序的教育是提高大学生素质的有效途径之一     

On the Hyers-Ulam-Rassias stability of functional equations in n-variables

In this paper we investigate a generalization of the Hyers-Ulam-Rassias stability for a functional equation of the form f(φ(X))=?(X)f(X)+ψ(X) and the stability in the sense of Ger for the functional equation of the form f(φ(X))=?(X)f(X), where X lie in n-variables. As a consequence, we obtain a stability result in the sense of Hyers-Ulam-Rassias, Gǎvruta, and Ger for some well-known equations such as the gamma, beta, and G-function type's equations.     

Simulation of polarization effects in AlGaN/GaN heterojunction

Because of their large band-gap, large high-field electron velocity, large breakdownfield, and large thermal conductivity, GaN and its heterojunction with AlGaN and InGaNhave foreseeable potential in the applications of high-power/temperature electronics, andoptoelectronic devices operative in UV and visible wavelength. Polarization inducedelectric field can reach the magnitude of ~MV/cm[1,2]. For AlGaN/GaN based FETs theconcentration of sheet carrier induced by polarization in the cha…