In-situ HVEM Observations of Dislocation Processes during High Temperature Deformation of Silicon Crystals

The characteristics in the plastic deformation of silicon crystals are first reviewed. Such characteristics have been interpreted quantitatively on the basis of some models on the velocity and the multiplication of dislocations during deformation. The results of the in-situ observations of silicon crystals deformed at elevated temperatures in a HVEM are presented. The slowness and the smoothness in the dislocation motion, the dynamic pile-up as a general mode of the collective motion of dislocations, the formation processes of multiplication centers of dislocations observed during the deformation all support the validity of the models adopted. Dislocation dipoles and Lomer-Cottrell sessiles are observed not to act as strong obstacles which play important roles in the work hardening of the crystals.     

Rapid crystallization of amorphous silicon utilizing a radio-frequency thermal plasma torch

The rapid crystallization of amorphous silicon utilizing the radio-frequency (rf) inductive coupling thermal plasma torch of argon is demonstrated. Highly-crystallized Si films were fabricated on thermally grown (th-)SiO₂ and textured a-Si:H:B/SnO₂/glass by adjusting a distance between the tip of the silica tube and the substrate stage and the translational velocity of the substrate stage. The crystallization was promoted efficiently from the bottom to front surface during the solidification and crystallization of liquid Si.     

Biaxial nematic phase of crank-like bis(β-diketonato)copper(II) complexes established by X-ray diffraction and Z-value calculations

We have synthesized a series of six novel bis(β-diketonate)copper (II) complexes, 1a, 1b, 2a, 2b, 3a, and 3b, substituted by two bulky substituents in the short molecular axis direction to investigate their mesomorphism. The m,p,m'-trimethoxylphenyl-substituted derivatives, 2a and 2b, and the m,p-dimethoxylphenyl-substituted derivatives, 3a and 3b, did not show mesomorphism, whereas each of the p-methoxyphenyl-substituted derivatives 1a and 1b only showed a nematic phase, which was revealed from polarizing microscopic observations. We established from X-ray diffraction and Z-value calculations that each of the crank-like derivatives 1a and 1b forms a rectangular parallelepiped dimer and shows a biaxial nematic phase.     

Azo benzene derivatives

Pressure-volume isotherms for 4-(trans-4-butylcylohexyl)benzonitrile were measured by means of piston-cylinder method. This substance has a monotropic nematic phase at atmospheric pressure. But over a pressure, the nature of isotropic to nematic phase transition changed from monotropic to enantiotropic phase transition. It is the first observation in P-V-T experiments that the monotropic isotropic-nematic transition changes enantiotropic under pressure.     

Topological Effects on Conductance of Nanotubes

Abstract

Electronic states in junctions of nanotubes with different circumferences are studied in an effective-mass approximation. The junction is characterized by boundary conditions which mix wave functions associated with K and K′ points. At ε=0, they decay linearly with the distance from the thicker nanotube, showing that the conductance decays with the junction length in proportion to its third power.     

Synthesis and Photocatalytic Property of Hectorite/(Pt,TiO2) and H4Nb6O17/(Pt,TiO2) Nanocomposites

Abstract

TiO₂ and Pt have been intercalated in hectorite and H₄Nb₆O₁₇. The height of TiO₂ and Pt pillars was less than 0.8 nm and the band gap energy of TiO₂ pillars was ca. 3.3 eV. Both hectorite/TiO₂ and H₄Nb₆O₁₇(Pt, TiO₂) were capable of hydrogen evolution following irradiation from a high pressure mercury are (λ > 290 nm) in the presence of methanol as a sacrificial hole acceptor and the hydrogen evolution was enhanced by co-incorporation of Pt, although hectorite and hectorite/Pt did not show photocatalytic activity. Incorporation of Pt or Pt and TiO₂ in the interlayer of H₄Nb₆O₁₇ has resulted in enhanced photo evolution of hydrogen, however, TiO₂ alone in the interlayer of H₄Nb₆O₁₇ showed adverse photocatalytic activity.     

Structural analysis of AlGaAs quantum wires on vicinal (110)GaAs by transmission electron microscopy and energy dispersive X-ray spectroscopy

Giant step structures consisting of coherently aligned multi-atomic steps were naturally formed during the molecular beam epitaxy growth of Al_0.5Ga_0.5As/GaAs superlattices (SLs) on vicinal (110)GaAs surfaces misoriented 6° toward (111)A. The growth of AlAs/Al_xGa_1−xAs/AlAs quantum wells (QWs) on the giant step structures realized Al_x0Ga_1−x0As (x₀<x) quantum wires (QWRs). We studied the giant step structures and the QWRs by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). TEM observations revealed that the QWRs were formed at the step edges. The cross sections of the QWRs were as small as 10 nm×20 nm and the lateral distances between them were about 0.15 μm. We clarified the roles of the SLs to form the coherent giant step structures. From EDX analysis, it was estimated that the AlAs composition in the Al_0.5Ga_0.5As layers varied from 0.5 (terrace) to 0.41 (step edge). In the AlAs/Al_xGa_1−xAs/AlAs QWs, the AlAs compositional modulation and the confinement by the AlAs barriers led to the embedded Al_x0Ga_1−x0As regions. These results supported the existence of the Al_x0Ga_1−x0As QWRs on the giant step structures.     

Precise thickness measurement within a few monolayers by X-ray diffraction from InGaAs/GaAs strained-layer superlattices

We propose a technique to measure the thickness of a GaAs layer with a precision of a few monolayers (MLs) by high-resolution X-ray diffraction (HRXRD) from InGaAs/GaAs strained-layer superlattices (SLSs) on GaAs substrates. Using this technique to monitor the GaAs growth rate, we have successfully controlled the Ga beam flux within ±1% in molecular beam epitaxy (MBE) growth for continuous 40 runs during four days by increasing the Ga cell temperature to compensate the decrease of the Ga beam flux caused by the consumption of the Ga source. Precise thickness measurements are also demonstrated in the growth on InP substrates by using InAlGaAs/InGaAs SLSs and InAlGaAs/InAlAs SLSs.     

High-Quality Protein Crystal Growth of Mouse Lipocalin-Type Prostaglandin D Synthase in Microgravity

Lipocalin-type prostaglandin (PG) D synthase (L-PGDS) catalyzes the isomerization of PGH(2) to PGD(2) and is involved in the regulation of pain and of nonrapid eye movement sleep and the differentiation of male genital organs and adipocytes, etc. L-PGDS is secreted into various body fluids and binds various lipophilic compounds with high affinities, acting also as an extracellular transporter. Mouse L-PGDS with a C65A mutation was previously crystallized with citrate or malonate as a precipitant, and the X-ray crystallographic structure was determined at 2.0 ? resolution. To obtain high-quality crystals, we tried, unsuccessfully, to crystallize the C65A mutant in microgravity under the same conditions used in the previous study. After further purifying the protein and changing the precipitant to polyethylene glycol (PEG) 8000, high-quality crystals were grown in microgravity. The precipitant solution was 40% (w/v) PEG 8000, 100 mM sodium chloride, and 100 mM HEPES-NaOH (pH 7.0). Crystals grew on board the International Space Station for 11 weeks in 2007, yielding single crystals of the wild-type L-PGDS and the C65A mutant, both of which diffracted at around 1.0 ? resolution. The crystal quality was markedly improved through the use of a high-viscosity precipitant solution in microgravity, in combination with the use of a highly purified protein.