High-resolution spectroscopy of velocity-selected atoms in a thin cell

We propose a novel technique of sub-Doppler spectroscopy using a thin vapor cell. Optical pumping in a thin cell transfers atoms with small velocity components to a specific quantum state. The resultant velocity distribution appears as a sub-Doppler structure in the absorption spectrum of a probe light. A single laser beam from a laser diode is split into two paths: one beam optically pumps Cs atoms on the D₂ line, and the other probes the absorption on the same line from a perpendicular direction. Observed hyperfine-resolved spectra and their parameter dependence are analyzed on the basis of rate equations. Received: 16 January 2002 / Revised version: 11 February 2002 / Published online: 24 April 2002     

McMullen's conditions and some lower bounds for general convex polytopes

We give a lower bound for the number of vertices of a generald-dimensional polytope with a given numberm ofi-faces for eachi = 0,..., d/2 – 1. The tightness of those bounds is proved using McMullen's conditions. Form greater than a small constant, those lower bounds are attained by simpliciali-neighbourly polytopes.     

Magnetic circular dichroism of theA andB bands in KI:Ga+, KI:In+, and KI:Sn2+

Magnetic circular dichroism (MCD) of theA- andB-absorption band region has been obtained at 4.2 K and 50 kG in KI:Ga⁺, KI:In⁺, and KI:Sn²⁺. The MCD spectra indicate the complex nature of these bands more clearly than the absorption spectra themselves do. TheA-band MCD consists in all cases of a positive and a negative part reflecting the structure of the absorption band. TheB-band MCD shows three peaks, two positive peaks at 4.34 and 4.41₅ eV (4.09 and 4.17₅ eV) and a negative peak at 4.38 eV (4.12₅ eV) in KI:Ga⁺ (KI:In⁺). TheB-band in KI:Sn²⁺ consists of a shoulder (b ₀) at 3.76 eV and a main band which has at least 5 sub-peaks (b ₁~b ₅) at 3.82₁, 3.84₁, 3.86₁, 3.88₀, and 3.89₅ eV; each of the subpeaks (b ₁~b ₅) gives a derivative-like MCD.The MCD shape functionf() for the transitiona _1g ² a _1g t _1u has been obtained for one set of parameter values by using the classical Franck-Condon approximation and the Monte Carlo integration method. The result can explain the observed salient features of theB- as well asA-band MCD's, indicating the validity of the Franck-Condon approximation and the interaction mode coordinates.     

Optical properties and origin of infrared light scattering centers in undoped semi-insulating GaAs crystals

The wavelength dependence and polarization characteristics of the infrared light scattered from an undoped GaAs crystal were investigated in the 90° angle infrared light scattering configuration. The scattering is Rayleigh scattering from scatterers which are always associated with the dislocations, and they are classified into three types,S, L _A , andL _G scatterers, according to their polarization characteristics. TheS, L _A , andL _G -scatterers are thought to be small As clusters, large As precipitates and large Ga precipitates, respectively.     

Smectic islands in antiferroelectric nanofilms

Heterochiral islands, in which topological dipoles are oppositely directed, are observed in freestanding antiferroelectric (SmC _A ^*) films. The topological dipoles in films with a transverse electric polarization and a planar molecule orientation at island boundaries are coplanar with an electric field. The topological dipoles in films with a longitudinal polarization and a planar orientation at island boundaries are perpendicular to an electric field. For a radial director orientation at island boundaries, the topological dipoles in films with a longitudinal polarization are coplanar with a field. Changing the orientation of an electric field, we can control the position of a topological defect at an island boundary and the orientation of a topological dipole. Heterochiral islands can form dimers with an anomalously small interisland distance.     

Theoretical study of the optical manipulation of semiconductor nanoparticles under an excitonic resonance condition

We theoretically study the mechanical interaction between radiation and a semiconductor nanoparticle, based on a microscopic model of confined excitons. The exerted force is calculated by using the Maxwell stress tensor expressed in terms of the microscopic response field. The numerical demonstrations clarify the following: (1) The enhancement of the force by using electronic resonance is remarkable for a particle with a radius of less than 100 nm for semiconductor materials. (2) The spectral peak position of the exerted force is considerably sensitive to nanoscale-size changes which would be useful for highly accurate size-selective manipulation.     

Decomposition mechanism of triethylindium (TEI) on a GaP(0 0 1)-(2×1) surface studied by LEED, AES, TPD and HREELS

Adsorption and decomposition of triethylindium (TEI: (C₂H₅)₃In) on a GaP(0 0 1)-(2×1) surface have been studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). It is found from the TPD result that ethyl radical and ethylene are evolved at about 300–400 and 450–550 K, respectively, as decomposition products of TEI on the surface. This result is quite different from that on the GaP(0 0 1)-(2×4) surface. The activation energy of desorption of ethyl radical is estimated to be about 93 kJ/mol. It is suggested that TEI is adsorbed molecularly on the surface at 100 K and that some of TEI molecules are dissociated into C₂H₅ to form P–C₂H₅ bonds at 300 K. The vibration modes related to ethyl group are decreased in intensity at about 300–400 and 450–550 K, which is consistent with the TPD result. The TEI molecules (including mono- and di-ethylindium) are not evolved from the surface. Based on the TPD and HREELS results, the decomposition mechanism of TEI on the GaP(0 0 1)-(2×1) surface is discussed and compared with that on the (2×4) surface.     

Internal tissue displacement measurement based on ultrasonic wave Doppler signal digital detection and its application to fetal movement monitoring

We have developed a fetal movement monitoring system based on small displacement measurement of internal tissues. When ultrasonic pulses are transmitted to the fetus, the reflected ultrasonic waves which have a Doppler frequency shift due to the fetal movements are detected by using an ultrasonic pulsed Doppler technique. In this paper, we propose a displacement measurement method for internal tissues which is based on the Doppler signal digital detection technique. In the method, the received ultrasonic RF signals are sampled with a sampling frequency of four times higher than the centre frequency of the ultrasonic waves; the Doppler frequency shift signals are derived using digital signal processing. From the detected signals, the internal displacements are estimated using the arc-tangent method. The basic algorithm of the detection method has already been used in the area of blood flow sensing, however, we apply the algorithm to the displacement measurement of internal tissues. The comparison between the proposed method and the conventional method is presented. The fetal movement quantitative monitoring system based on the method which has been constructed is shown.