Prospective study on observations of γ-ray sources in the Galaxy using the HADAR experiment

The High Altitude Detection of Astronomical Radiation (HADAR) experiment is a refracting terrestrial telescope array based on the atmospheric Cherenkov imaging technique. It focuses the Cherenkov light emitted by extensive air showers through a large aperture water-lens system for observing very-high-energy γ-rays and cosmic rays. With the advantages of a large field-of-view (FOV) and low energy threshold, the HADAR experiment operates in a large-scale sky scanning mode to observe galactic sources. This study presents the prospects of using the HADAR experiment for the sky survey of TeV γ-ray sources from TeVCat and provids a one-year survey of statistical significance. Results from the simulation show that a total of 23 galactic point sources, including five supernova remnant sources and superbubbles, four pulsar wind nebula sources, and 14 unidentified sources, were detected in the HADAR FOV with a significance greater than 5 standard deviations (σ). The statistical significance for the Crab Nebula during one year of operation reached 346.0 σ and the one-year integral sensitivity of HADAR above 1 TeV was ~1.3%–2.4% of the flux from the Crab Nebula.     

Meaningful Secret Image Sharing with Saliency Detection

Secret image sharing (SIS), as one of the applications of information theory in information security protection, has been widely used in many areas, such as blockchain, identity authentication and distributed cloud storage. In traditional secret image sharing schemes, noise-like shadows introduce difficulties into shadow management and increase the risk of attacks. Meaningful secret image sharing is thus proposed to solve these problems. Previous meaningful SIS schemes have employed steganography to hide shares into cover images, and their covers are always binary images. These schemes usually include pixel expansion and low visual quality shadows. To improve the shadow quality, we design a meaningful secret image sharing scheme with saliency detection. Saliency detection is used to determine the salient regions of cover images. In our proposed scheme, we improve the quality of salient regions that are sensitive to the human vision system. In this way, we obtain meaningful shadows with better visual quality. Experiment results and comparisons demonstrate the effectiveness of our proposed scheme.     

Automatic Search Dense Connection Module for Super-Resolution

The development of display technology has continuously increased the requirements for image resolution. However, the imaging systems of many cameras are limited by their physical conditions, and the image resolution is often restrictive. Recently, several models based on deep convolutional neural network (CNN) have gained significant performance for image super-resolution (SR), while extensive memory consumption and computation overhead hinder practical applications. For this purpose, we present a lightweight network that automatically searches dense connection (ASDCN) for image super-resolution (SR), which effectively reduces redundancy in dense connection and focuses on more valuable features. We employ neural architecture search (NAS) to model the searching of dense connections. Qualitative and quantitative experiments on five public datasets show that our derived model achieves superior performance over the state-of-the-art models.     

时域压缩合成孔径超分辨水声成像算法

提出一种针对水下稀疏目标的时域压缩合成孔径声呐成像方法(TC-SAS),实现了水声目标高分辨实时成像。通过多子阵的孔径合成,在时域上构造出成像网格格点到有效孔径内逐帧阵列的格林函数,并给出成像区域散射强度到数据域的映射矩阵;然后利用该区域空域稀疏的先验知识,通过正交匹配追踪的稀疏重构方式,解算出成像区域散射系数矩阵,实现了稀疏目标高分辨成像.同时,针对线性调频信号提出数据缩减的方法,通过对观测数据和字典矩阵同时脉压后截取,减小了数据规模;进一步结合二维矩阵数表查表的方法,以空间换时间,实现了区块实时成像。数值仿真以及湖试试验表明,所提算法能分辨出传统的时延求和算法难以分辨的目标,并且在图像清晰度指标上平均提升4.9 dB.改善了合成孔径声呐的成像质量.     

H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

基于Franz-Keldysh效应的倏逝波锗硅电吸收调制器设计

本文设计了一种基于Franz-Keldysh (FK) 效应的GeSi电吸收调制器. 调制器集成了脊形硅单模波导. 光由脊形硅波导以倏逝波形式耦合进锗硅吸收层. 在硅基锗二极管FK效应实验测试的基础上, 有源区调制层锗硅中的硅组分设计为1.19%, 从而使得器件工作在C (1528–1560 nm) 波段. 模拟结果显示该调制器的3 dB带宽可达64 GHz, 消光比为8.8 dB, 而插损仅为2.7 dB. 关键词： 锗硅 调制器 电光集成     

近玻尔速度Ne2+离子穿过碳膜引起的电子发射

本文测量了入射能为2–25 keV/u的Ne²⁺离子穿过不同厚度碳膜诱导的前向、后向 (分别对应出射表面和入射表面) 电子发射产额. 实验中通过改变炮弹离子的能量, 系统的研究了势能沉积、电子能损以及反冲原子对前向、后向电子发射产额的贡献. 结果表明, 离子的势能沉积只对后向电子发射有贡献, 前向、后向电子发射产额分别与Ne²⁺离子在薄膜出射、入射表面的电子能损近似成正比关系, 其中电子能损很低 (对应于离子能量很低) 的时候, 反冲原子对电子发射的贡献不能忽略. 关键词： 近玻尔速度 电子发射 电子能损 反冲原子     

基于电化学与热能的耦合关系演算聚合物锂离子动力电池的温度状态及分布

基于电化学-热耦合模型研究聚合物锂离子动力电池放电过程热行为, 分析了放电倍率、冷却条件对电池放电过程的温度变化及分布的影响规律. 结果表明: 3C放电时, 模型计算结果与实测结果的平均偏差为0.57 K, 方差为0.15, 说明模型准确度较高. 电芯的平均生热率在整个放电过程中呈现出增加的趋势, 初期和末期增长较快. 大倍率放电时, 与电流密度的平方呈正比的不可逆热所占的比重较大, 小倍率放电时, 电化学反应可逆热占主导. 改善冷却条件能降低电池放电过程的平均温度, 对流传热过程的表面传热系数为5 W/(m²·K), 1 C, 3 C, 5 C放电结束时, 电芯的平均温升为分别为6.46 K, 17.67 K, 27.53 K, 当对流传热过程的表面传热系数增加至25 W/(m²·K)时, 温升比自然对流条件下相同倍率放电时的温度分别降低了2.91 K, 4.68 K, 5.62 K, 但电芯温度分布的不一致性也会加剧. 关键词： 电化学 耦合 锂离子动力电池 温度分布     

Influence of cooperativity on the frequency shift of the Ar–H stretch vibration in HArF complexes

CH₃Li–FArH–X (X?=?H₂, OC, N₂, P₂, CO₂, CO, BeH₂) trimers have been investigated using quantum chemical calculations at the QCISD/6-311++G(2d,2p) level. The results show that the lithium bonding has a prominent effect on the strength and properties of the hydrogen bonding. The hydrogen-bonding interaction energy is increased by 160–340% due to the presence of lithium bonding. The Ar–H stretch vibration shows a blue shift in the FArH–X (X?=?H₂, OC, N₂, CO₂, CO) dimer, but a red shift in the FArH–X (X?=?P₂, BeH₂) dimer. The red shift is increased in the corresponding trimer, while the blue shift shows a different change. The blue shift is also increased in CH₃Li–FArH–X (X?=?H₂, OC, N₂, CO₂) trimers, but it changes to a red shift in the CH₃Li–FArH–CO trimer. The shift change is consistent with the explanation given by Joseph and Jemmis.     

Low temperature photoconductivity in electron - irradiated p-type Si

The photoconductivity spectra of p-type silicon irradiated at ～15 °K with 1.2 MeV electrons were studied in the wavelength range from 1.2 to 5.5 μ at temperatures from 23 to 80 °K. The 3.9 μ photoconductivity band appears immediately after irradiation in all crystals already at low temperatures, giving further evidence that it is due to the divacancy formed directly during irradiation by electrons. Three main annealing stages of the photoconductivity have been observed; (a) below 160 °K, (b) 160–250 °K, and (c) 280–360 °K. A radiation-induced deep level at E_v , +(0.12±0.02 eV disappears upon annealing at stage b. The annealing behavior of the spectra depends strongly on the measuring temperature. The dependence of the spectra on chopper speed was also investigated.