Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric

By solving Poisson’s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal–oxide semiconductor field-effect transistor (MOSFET) with a high-κ gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-κ dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

Enantioselective organocatalyzed sulfenylation of 3-substituted oxindoles

A highly enantioselective sulfenylation reaction with respect to 3-substituted oxindoles and electrophilic sulfur reagents by a quinidine catalyst was investigated.     

Numerical analysis and experimental study of hydrogen production from dimethyl ether steam reforming

An experimental and theoretical study of steam reforming of dimethyl ether was carried out in a processor for fuel cell vehicles to explore the effect of temperature gradient and hydrogen content of the processor.A steady-state,laminar,two-dimensional axi-symmetric model was proposed to investigate the fluid flow,heat transfer and chemical reactions in the dimethyl ether steam reforming processor using porous medium approach.The numerical model was established with Star-CD program using SIMPLE algorithm and finite volume method.Experimental verification of the two-dimensional mathematical model was conducted.The numerical results coincided well with the experimental data.The effects of the parameters on the temperature gradient and hydrogen content of the processor were studied using the numerical model.     

Dielectric characteristics of cation deficient TbMnO3

Cation deficient polycrystalline Tb_1−xMnO₃ (x= 0.05, 0.10) and TbMn_1−yO₃ (y =0.05, 0.10) samples were fabricated by conventional solid-state reaction. The complex dielectric properties of the cation deficient TbMnO₃ were investigated as the function of temperature (77 K≤T≤350 K) and frequency (100 Hz≤ f≤ 200 kHz) separately. Compared to the parent TbMnO₃, the cation deficient TbMnO₃ samples exhibit not only high dielectric constant but also low dissipation factor. Nyquist plots of complex impedance show that the dielectric properties originate from two main relaxation sources, i.e. bulk contributions and grain boundary effects.     

Highly efficient double-ended diffusion-bonded Nd:YVO4 1525-nm eye-safe Raman laser under direct 880-nm pumping

A highly efficient 880-nm diode-pumped actively Q-switched eye-safe laser at 1525 nm with a double-ended diffusion-bonded YVO₄–Nd:YVO₄–YVO₄ crystal as the self-Raman medium is demonstrated. As high as 19.2% diode-to-Stokes optical conversion efficiency is obtained with an absorbed pump power of 5.2 W at a pulse repetition rate of 20 kHz.     

激光诱导击穿光谱定量分析中的分析线自动选择方法

为了实现激光诱导击穿光谱分析中的分析线自动选择,定义了元素发射谱线的相对强度比(RDTIR)、波长偏差(WDDT)两个参数,并据此对检测谱线进行筛选,通过设定合理的阈值,剔除自吸收和干扰严重的谱线。通过对高合金钢(GBW01605)实验数据的分析,分别选定了样品中主要元素铁、铬、镍、锰、铜的分析线,选线结果符合谱线的选取原则。     

Kinetics of crystallization process of Mg–Cu–Gd based bulk metallic glasses

The crystallization behavior of Mg₆₁Cu₂₈Gd₁₁ and (Mg₆₁Cu₂₈Gd₁₁)₉₈Cd₂ bulk metallic glasses was studied using DSC in the mode of continuous and isothermal heating, and its crystallization process and microstructure were confirmed by XRD and TEM. In continuous heating, the activation energies of glass transition, onset and peak crystallization were determined by the Kissinger method, which yields 110 ± 12, 77 ± 9 and 79 ± 10 kJ/mol, respectively, for Mg₆₁Cu₂₈Gd₁₁ glassy alloy, and 144 ± 10, 126 ± 6 and 131 ± 5 kJ/mol, respectively, for (Mg₆₁Cu₂₈Gd₁₁)₉₈Cd₂ glassy alloy. The isothermal kinetics was modeled by the Johnson-Mehl-Avrami equation. The Avrami exponent of the base alloy was in the range from 1.98 to 2.56 (± 0.01), which indicated a decreasing nucleation rate and a diffusion-controlled growth. For Cd-added glassy alloy, the Avrami exponent was in the range from 3.26 to 4.08, which indicated an increasing nucleation rate. The activation energies in isothermal process were calculated to be 88 ± 2 and 132 ± 2 kJ/mol, respectively, for the base and Cd-added glassy alloys. It was found that Mg₂Cu phase was the primary phase in the initial crystallization and the strong affinity between Cd and Mg/Gd tended to impose resistance to the formation of Mg₂Cu phase and thus improves the thermal stability.     

铂纳米颗粒生长和表面结构的理论预测

本文应用最近所建立的凝结势模型[2009物理学报583293;2009J.Chem.Phys.130164711]来确定铂纳米颗粒的表面结构,利用分子动力学模拟验证了该模型的可靠性.基于该模型所进行的第一性原理计算表明,各种形状的铂颗粒表面都以fcc的(111)面为主(约80%),(100)面形成的概率约10%,该结果与已有实验观测相符合.由于凝结势计算简单,该模型应是一种从理论上确定纳米颗粒表面结构的简便方法.     

非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET的解析模型

为抑制短沟道效应和热载流子效应, 提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构. 通过在圆柱坐标系中精确求解三段连续的泊松方程, 推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型. 结果表明, 新结构可有效抑制短沟道效应和热载流子效应, 并具有较小的关态电流. 此外, 分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响, 而栅电极功函数对亚阈值电流的影响较大. 解析模型结果和三维数值仿真工具ISE所得结果高度符合.     

原子光刻中驻波场与基片距离的判定方法研究

原子光刻实验中, 激光驻波场能起到原子透镜的效果, 实现原子汇聚. 激光驻波场与沉积基片间的距离对形成纳米条纹结构的质量具有重要影响. 利用高斯光束传播规律, 提出了一种能够定量判断激光驻波场与沉积基片相对位置的实验方法. 该方法通过调节装载有凸透镜和反射镜的精密位移台改变驻波场距基片的距离, 利用光电探测器接收反射光强的变化, 将位移改变量转变为接收器的电压信号. 利用驻波场激光束光斑直径值, 实现准确定位驻波场与基片的距离. 对上述实验过程进行数值模拟, 数值计算的结果和实验结果高度符合. 该方法实现了准确定位驻波场距基片的距离, 为后续深入研究驻波场和基片间距离对沉积纳米条纹结构质量的影响提供实验基础.