全文获取类型
收费全文 | 19136篇 |
免费 | 3305篇 |
国内免费 | 1697篇 |
专业分类
化学 | 13236篇 |
晶体学 | 182篇 |
力学 | 1042篇 |
综合类 | 70篇 |
数学 | 2035篇 |
物理学 | 7573篇 |
出版年
2024年 | 64篇 |
2023年 | 402篇 |
2022年 | 714篇 |
2021年 | 767篇 |
2020年 | 740篇 |
2019年 | 757篇 |
2018年 | 741篇 |
2017年 | 590篇 |
2016年 | 991篇 |
2015年 | 885篇 |
2014年 | 1101篇 |
2013年 | 1434篇 |
2012年 | 1738篇 |
2011年 | 1768篇 |
2010年 | 1167篇 |
2009年 | 1089篇 |
2008年 | 1199篇 |
2007年 | 1043篇 |
2006年 | 992篇 |
2005年 | 789篇 |
2004年 | 603篇 |
2003年 | 426篇 |
2002年 | 435篇 |
2001年 | 336篇 |
2000年 | 279篇 |
1999年 | 389篇 |
1998年 | 276篇 |
1997年 | 294篇 |
1996年 | 284篇 |
1995年 | 246篇 |
1994年 | 209篇 |
1993年 | 215篇 |
1992年 | 144篇 |
1991年 | 160篇 |
1990年 | 130篇 |
1989年 | 99篇 |
1988年 | 89篇 |
1987年 | 71篇 |
1986年 | 68篇 |
1985年 | 54篇 |
1984年 | 57篇 |
1983年 | 30篇 |
1982年 | 32篇 |
1981年 | 23篇 |
1980年 | 26篇 |
1978年 | 13篇 |
1976年 | 16篇 |
1975年 | 15篇 |
1973年 | 15篇 |
1968年 | 14篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
171.
The energy band structure of spin-1 condensates with repulsive spin-independent and either ferromagnetic or antiferromagnetic spin-dependent interactions in one-dimensional (1D) periodic optical lattices is discussed. Within the two-mode approximation, Bloch bands of spin-1 condensates are presented. The results show that the Bloch bands exhibit a complex structure as the atom density of m F=0 hyperfine state increases: bands splitting, reversion, intersection and loop structure are excited subsequently. The complex band structure should be related to the tunneling and spin-mixing dynamics. 相似文献
172.
173.
174.
175.
In this paper we review the preparation and reaction properties of ordered SmRh surface alloys and SmOx/Rh(1 0 0) model catalyst which have been systematically investigated by low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and temperature desorption spectroscopy (TDS). The growth of Sm on Rh(1 0 0) at room temperature follows the Stranski-Krastanov mode. Thermal treatment of the Sm films on Rh(1 0 0) leads to the formation of ordered SmRh surface alloys. An “inverse” SmOx/Rh(1 0 0) model catalyst is produced under controlled oxidation of the SmRh surface alloy. CO adsorption on the SmRh alloy and SmOx/Rh(1 0 0) surfaces gives rise to five TDS characteristic features originating from different adsorption sites. Both the site blocking of SmOx and the electron transfer between SmOx and Rh substrate significantly affect the CO adsorption. Acetate decomposition on both Rh(1 0 0) and the SmOx/Rh(1 0 0) surfaces are found to undergo two competitive pathways that yields either (i) CO(a) and O(a) or (ii) CO2(g) and H2(g) at high temperature. The reactive desorption of acetic acid on SmOx/Rh(1 0 0) is dramatically different from that on Rh(1 0 0). A rapid decomposition of acetic acid to produce CO(g) and CO2(g) can be observed only on SmOx/Rh(1 0 0), where CO(g) becomes the predominant product at 225 K, indicating a strong promotional effect of SmOx in the selective decomposition of acetate. Finally, we briefly describe the future outlook of research on rare earth oxide/metal model catalysts. 相似文献
176.
基于最低未被占据分子轨道(LUMO)和最高被占据分子轨道(HOMO)的高斯态密度分布与载流子在允许量子态中的费米-狄拉克(Fermi-Dirac)分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载
关键词:
有机半导体
掺杂
高斯态密度
载流子浓度 相似文献
177.
An efficient deterministic secure quantum communication scheme based on cluster states and identity authentication 下载免费PDF全文
A novel efficient deterministic secure quantum communication scheme
based on four-qubit cluster states and single-photon identity
authentication is proposed. In this scheme, the two authenticated
users can transmit two bits of classical information per cluster
state, and its efficiency of the quantum communication is 1/3, which
is approximately 1.67 times that of the previous protocol presented
by Wang et al [Chin. Phys. Lett. 23 (2006) 2658].
Security analysis shows the present scheme is secure against
intercept-resend attack and the impersonator's attack. Furthermore,
it is more economic with present-day techniques and easily processed
by a one-way quantum computer. 相似文献
178.
采用金属有机物化学气相沉积(MOCVD)法在蓝宝石(0001)衬底上制备出了Ga2(1-χ)In2χO3(χ=0.1-0.9)薄膜,研究了薄膜的结构、电学和光学特性以及退火处理对薄膜性质的影响.测量结果表明:当In组分χ=0.2时,样品为单斜β-Ga2O3,结构;χ=0.5的样品,薄膜呈现非晶结构,退火处理后薄膜结构得到明显的改善,由非晶结构转变为具有(222)单一取向的立方In2O3结构;对于χ=0.8,薄膜为立方In2O3,结构,退火后薄膜的晶体质量得到提高.在可见光区薄膜本身的透过率均达到了85%以上,带隙宽度随样品中Ga含量的改变在3.76-4.43 eV之间变化,且经退火处理后带隙宽度明显增大. 相似文献
179.
Spectrally selective splitters with metal-dielectric-metal (MDM) subwavelength waveguides are proposed in this paper. The
method is based on the Bragg grating structure with periodically modulated MDM waveguide width, which delivers a stop band
effect for the surface plasmon propagating in the waveguide. By adding appropriate Bragg grating structure in one or more
arms of the waveguide splitters, light in a certain frequency range can be readily guided into the desired directions, as
demonstrated numerically by the finite-difference time-domain method. Dependence and optimization of the geometrical parameters
are also considered in this paper. 相似文献
180.
F. Wang T. Liu C.L. Xie Y. Liu N.S. Ma J. Duan J.R. He B. Li B.L. Ou Y. Ou J.J. Cheng Q. Liu L.F. Liu W. Wang 《Physics letters. A》2019,383(24):2933-2937
The Multicaloric effect in the PbZr0.8Ti0.2O3 thin films is investigated with the application of sine wave electric field, dc electric field and stress using a phase field method combined with the thermodynamic analysis. The simulation results show that the adiabatic temperature change-electric field curve presents a shape of butterfly in the presence of the sine wave electric field. In order to detect the effect of the sine wave electric field, the multicaloric effect and the domain structures under the direct electric field and the sine wave electric field are compared. It is found that the domain switching behaviors are quite different under the different applied electric fields. And the negative multicaloric effect in the PbZr0.8Ti0.2O3 thin film is attribute to the domain switching under the external field. 相似文献