热塑料板膜工艺与热塑料教具

热塑料板膜工艺是用热成型方法制作单件塑料教具和塑料配件的一种技术，它为无塑料制品生产能力的大、中院校物理、化学、生物实验室在研制教学仪器或做仿真制品时提供可行的石膏——锡模方法．教师采用该工艺，可在无现成模具和无注塑设备的条件下生产塑料教具，并可为计算机虚拟教学，提供实体模型．     

R~(n+1)中常高阶平均曲率超曲面

本文给出了Rn+1中超曲面的一些积分公式,并利用这些积分公式得到了以球面为边界的常高阶平均曲率超曲面的一些唯一性结果.     

LD泵浦Nd:YVO4/LBO临界相位匹配腔内倍频瓦级绿光激光器

报道了一种光纤耦合LD泵浦Nd:YVO₄晶体、腔内Ⅰ类临界相位匹配(角度匹配)LBO倍频、瓦级输出的全固态绿光激光器的设计方法和实验结果.采用短三镜折叠腔结构,通过对热透镜焦距的估算及计算机优化设计选取合适的谐振腔参量,在8 W的泵浦功率下,获得了1.6 W绿光基模输出,光-光转换效率达20%.经测量,绿光的偏振比超过400:1,4 h功率稳定度为±1.6%.     

用于高数值孔径物镜的可调光瞳滤波器

根据矢量衍射理论，提出了一种用于提高高数值孔径显微物镜纵向分辨率的可调二元环形光瞳滤波器，通过改变滤波器的环半径获得不同的纵向分辨率，并利用共焦显微术点扩散函数的乘积性大大地降低了旁瓣相对主瓣的比值。模拟结果表明，这种新型滤波器不仅可以提高高数值孔径物镜的纵向分辨率，同时基本上不影响横向分辨率。     

Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

E₂SiO₅ thin films were fabricated on Si substrate by reactive magnetron sputtering method with subsequent annealing treatment. The morphology properties of as-deposited films have been studied by scanning electron microscope. The fraction of erbium is estimated to be 23.5 at% based on Rutherford backscattering measurement in as-deposited Er-Si-O film. X-ray diffraction measurement revealed that Er₂SiO₅ crystalline structure was formed as sample treated at 1100 °C for 1 h in O₂ atmosphere. Through proper thermal treatment, the 1.53 μm Er³⁺-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 °C. Analysis of pump-power dependence of Er³⁺ PL intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10²¹(photons/cm²/sec). Temperature-dependent photoluminescence (PL) of Er₂SiO₅ was studied and showed a weak thermal quenching factor of 2. Highly efficienct photoluminescence of Er₂SiO₅ films has been demonstrated with Er³⁺ concentration of 10²²/cm³, and it opens a promising way towards future Si-based light source for Si photonics.     

Role of Bi ions for Er ions efficient 1.54 μm light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO₂ thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 °C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er³⁺-related 1.54 μm light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 μm reached maximum at 800 °C and decreased dramatically at 1000 °C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi³⁺ ions for Er³⁺ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi³⁺ ions can provide a perfect environment for Er³⁺ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi³⁺ ions to Er³⁺ ions is evidenced and found to be a more efficient way for Er³⁺ ions near infrared emission. This makes the Bi³⁺ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED.     

The Nonlinear Schr¨odinger Equations with Combined Nonlinearities of Power-Type and Hartree-Type

The primary goal of this paper is to present a comprehensive study of the nonlinear Schr?dinger equations with combined nonlinearities of the power-type and Hartree-type. Under certain structural conditions, the authors are able to provide a complete picture of how the nonlinear Schr?dinger equations with combined nonlinearities interact in the given energy space. The method used in the paper is based upon the Morawetz estimates and perturbation principles.     

辐射加热金X光再发射时间测量

利用星光Ⅱ三倍频激光打双盘靶，研究了辐射加热材料的Ｘ光发射时间。激光脉冲能量４０～６０Ｊ、脉冲宽度６００～７００ｐｓ。通过两台时间关联的亚千Ｘ光能谱仪分别监测双盘靶初、次级发射Ｘ光谱，给出了辐射加热次级Ｘ光再发射时间。     

相对论磁控管的实验研究

简要分析了相３对论磁控管的主要特点与问题，编制了谐振系统数值计算程序，通过数值计算与冷测，对不同阴极尺寸与输出结构的磁控管进行了研究，清晰地描述了磁控管的振荡模式与简并现象。制作了Ａ６型相对论磁控管并进行了热测实验，研究了输出功率与工作磁场的关系，经过大量优化工作，在Ｓ波段获得了３８０ＭＷ的微波辐射。     

光学变换中的离散取样方法

本文研究了光学变换中的离散取样问题。基于幺正变换的考虑,求得了光学变换中离散取样方法所依据的条件。导出了包含取样单元透光孔作用的光传播矩阵。最后,以自然序Walsh变换为例,具体计算了变换所需全息透镜的振幅与相位分布及相应的误差。 关键词：