霍尔推进器中磁化二次电子对鞘层特性的影响

为进一步研究霍尔推进器壁面二次电子发射对推进器性能的影响,采用流体模型数值模拟了二次电子磁化效应的等离子体鞘层特性.得到二次电子磁化鞘层的玻姆判据.讨论了不同的磁场强度和方向、二次电子发射系数以及不同种类等离子体推进器的鞘层结构.结果表明:随器壁二次电子发射系数的增大,鞘层中粒子密度增加,器壁电势升高,鞘层厚度减小;鞘层电势及粒子密度随着磁场强度和方位角的增加而增加;而对于不同种类的等离子体,壁面电势和鞘层厚度也不同.这为霍尔推进器的磁安特性实验提供了理论解释. 关键词： 霍尔推进器 磁鞘 二次电子     

Cations Modulated Assembly of Triol-Ligand Modified Cu-Centered Anderson-Evans Polyanions

Counter-cations are essential components of polyoxometalates (POMs), which have a distinct influence on the solubility, stabilization, self-assembly, and functionality of POMs. To investigate the roles of cations in the packing of POMs, as a systematic investigation, herein, a series of triol-ligand covalently modified Cu-centered Anderson-Evans POMs with different counter ions were prepared in an aqueous solution and characterized by various techniques including single-crystal X-ray diffraction. Using the strategy of controlling Mo sources, in the presence of triol ligand, NH₄⁺, Cu²⁺ and Na⁺ were introduced successfully into POMs. When (NH₄)₆Mo₇O₂₄ was selected, the counter cations of the produced POMs were ammonium ions, which resulted in the existence of clusters in the discrete state. Additionally, with the modulation of the pH of the solutions, the modified sites of triol ligands on the cluster can be controlled to form δ- or χ-isomers. By applying MoO₃ in the same reaction, Cu²⁺ ions served as linkers to connect triol-ligand modified polyanions into chains. When Na₄Mo₈O₂₆ was employed as the Mo source to react with triol ligands in the presence of CuCl₂, two 2-D networks were obtained with {Na₄(H₂O)₁₄} or {{Na₂(H₂O)₄} sub-clusters as linkers, where the building blocks were δ/δ- and χ/χ-isomers, respectively. The present investigation reveals that the charges, sizes and coordination manners of the counter cations have an obvious influence on the assembled structure of polyanions.     

Topological aspect of Chern--Simons p-branes

By generalizing the topological current of Abelian Chern--Simons (CS) vortices, we present a topological tensor current of CS p-branes based on the \phi -mapping topological current theory. It is revealed that CS p-branes are located at the isolated zeros of the vector field \phi(x), and the topological structure of CS p-branes is characterized by the winding number of the \phi-mappings. Furthermore, the Nambu--Goto action and the equation of motion for multi CS p-branes are obtained.     

激光辐照下皮肤组织光热响应有限元分析

为了更好地选择临床激光医疗曝光参量,采用有限元数值计算方法,模拟了脉冲激光与连续激光对人皮肤组织的光热作用及导致的温度变化效应,比较了两者的不同,得到了热响应时间及热弛豫时间与组织深度的关系,即组织越深(0～60 μm),其热响应时间(0～4 ms)与热弛豫时间(0.4～12.1 ms)越长;分析了激光脉宽长短对组织升温的影响;建立了评价脉冲间热损失的评价函数δ,并以此对脉冲间隔的选取作了探讨.     

Superhydrophobic Flexible Supercapacitors Formed by Integrating Hydrogel with Functional Carbon Nanomaterials

Main observation and conclusion With the rapid development of the wearable electronics,the flexible supercapacitor with high energy density has attracted more a...     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

HL-2A托卡马克中性束辐射光谱的数值模拟

采用数值模拟的方法研究中性束辐射光谱(BES)对开展与中性束相关的光谱诊断与实验有重要的指导意义.本文在HL-2A托卡马克装置上利用ADAS数据库（Atomic Data and Analysis Structure,1998）计算有效束辐射系数和有效束衰减系数,分析了束辐射光谱强度与等离子体运行参数和中性束参数的关系,并在不同的中性束注入能量、等离子体密度分布和等离子体温度分布的情况下,获得了束辐射光谱强度的空间分布.在n_e=2×10¹³ cm< 关键词： 中性束 束辐射光谱 束衰减     

Modelling effects of subgrid-scale mixture fraction variance in LES of a piloted diffusion flame

A posteriori analysis of the statistics of two large-eddy simulation (LES) solutions describing a piloted methane–air (Sandia D) flame is performed on a series of grids with progressively increased resolution reaching about 10.5 million cells. Chemical compositions, density and temperature fields are modelled with a steady flamelet approach and parametrised by the mixture fraction. The difference between the LES solutions arises from a different numerical treatment of the subgrid scale (SGS) mixture fraction variance – an important quantity of interest in non-premixed combustion modelling. In the first case (model I), the variance transport equation is solved directly, while in the second (model II), an equation for the square of the mixture fraction is solved, and the variance is computed from its definition. The comparison of the LES solutions is based on the convergence properties of their statistics with respect to the turbulence resolution length scale. The dependence of the LES statistics is analysed for velocity and the mixture fraction fields, and tested for convergence. For the most part, the statistics converge for the finest grids, but the variance of the mixture fraction shows some residual grid dependence in the high-gradient regions of the jet near field. The SGS variance given by model I exhibits realisability everywhere, whereas in regions of the flame model II is non-realisable, predicting negative variances. Furthermore, the LES statistics of model I exhibit superior convergence behaviour.     

Size-dependent ignition temperature of metallic compounds fabricated by self-propagating high-temperature synthesis

Considering the diffusion reaction at solid interfaces, the ignition temperature of compounds fabricated by self-propagating high-temperature synthesis (SHS) is modelled with the help of size-dependent activation energy. As reactant size decreases, ignition temperature also decreases. This is because of increased contact areas between the reactants and the lowered diffusion barrier, both of which must be calculated specifically for reactants in nanoscale. The model predictions and experimental results are consistent for some metallic compounds.     

Notable shift of ultraviolet intensity on Sn-doped ZnO nanostructure fabricated by sol–gel method

Sn-doped ZnO (SZO) thin films are deposited by sol–gel dip-coating method with Sn content at 0 at.% and 1–15 at.% with an increment of 2 at.%. The structure and luminescence of the films are investigated. X-ray diffraction results indicate that all the SZO samples show preferential orientation along the (002) direction, and the scanning electron microscope exhibits that the surface morphology of the films change from nanoparticles to nanorods with increasing Sn concentration. X-ray photoelectron spectroscopy reveals that Sn exists as valence of +4 in the matrix. The photoluminescence peaks at 381 and 398 nm are observed in all the samples. The ratio of intensity of peak at 381 nm to that of peak at 398 nm differed markedly. The intensity of peak at 398 nm might be due to the response for the Sn atoms, while the intensity of peak at 381 nm is probably related to the quantum size effect.