四磺基酞菁钴合成及其与牛血清白蛋白结合作用的研究

以高锰酸钾降解薛氏钠盐(6-羟基-β-萘磺酸钠)合成4-磺基邻苯二甲酸,并以此为原料“固相熔融法”合成了四磺基酞菁钴(CoPcS₄)。CoPcS₄在DMSO中发生解聚,随着pH值的升高,解聚增加。CoPcS₄以二聚体形式与牛血清白蛋白(BSA)结合后具有更强的光敏活性。分别采用紫外和荧光光谱分析方法准确测定了四磺基酞菁钴与BSA的结合位置数和结合常数。两种方法的结果基本一致,数量级皆为105 L·mol-1。CoPcS₄与BSA的首要结合位置为SiteⅠ和SiteⅡ,两种结合位置的结合能力差别不大。结果表明,CoPcS₄可与牛血清白蛋白很好地结合,白蛋白起到存储与转运作用。     

四氨羰甲基对-叔丁基杯[4]芳烃的合成及聚集行为

对-叔丁基杯[4]芳烃与溴乙酸乙酯反应,得到锥式、1,2-交替、1,3-交替和部分锥式构象的四取代衍生物;将锥式、1,2-交替和1,3-交替构象的四乙酸乙酯取代衍生物在氨的甲醇溶液中进行氨解得到相应的酰胺产物.通过核磁研究比较了氨解产物的自聚集情况.锥式构象四氨羰甲基对-叔丁基杯[4]芳烃分子在氯仿溶剂中的分子间作用力很弱,容易溶剂化,溶剂中核磁谱图不能观察到分子聚集;而1,2-交替构象的四氨羰甲基对-叔丁基杯[4]芳烃分子间存在相当强的作用力,在氯仿中的溶解性较差,核磁谱图表明分子在氯仿溶剂中有分子聚集的现象.1,3-交替构象的四氨羰甲基对-叔丁基杯[4]芳烃分子可以形成一定的聚集体,在高浓度时是聚集体的形式;在浓度较低或者加入酸予以破坏时,溶液中是以单体的形式存在.     

用于长城等古建筑探测的NMR探测器的磁体设计

以万里长城为代表的古建筑是世界瑰宝,更是中华民族的象征和骄傲.本文提出利用便携式核磁共振（NMR）装置来探测研究这类古建筑的建筑材料,在不对其造成损伤的基础上,发掘其隐含的科学、技术和工程相关的丰富信息.为此,作为第一步,设计了适合于探测这类古建筑的便携式单边NMR探测器组合式磁体.该探测器的磁体结构以semi-Halbach为基础,通过不同磁体模块间的组合得到对应移动探测模式、长距离探测模式和均匀磁场探测模式的磁体结构.随后根据优化结果,设计加工了磁体组件,并采用该磁体进行了流体、长城城砖和现代红砖的NMR实验,实测结果与模拟一致.该组合式磁体的优点在于通过不同磁体模块组合,实现了多种探测方式,适用于探测长城等这类古建筑物需要多种探测模式的科学研究.     

人工神经网络对VOCs的自动识别

利用人工神经网络(ANN)对严重混叠的傅里叶变换红外光谱图进行了定性和定量解析。通过大量模拟数据训练神经网络后,引用了新的评价标准——逼近度来选择最优网络模型。利用此优化网络对两类光谱图进行了解析,考察了网络的泛化能力。结果表明：该网络不仅能够对两组分同时存在时的样本进行准确解析,而且对于未知单组分光谱图,也能够进行准确鉴别和定量分析。可见, 该研究为人工神经网络在单组分和多组分未知物的定性和定量分析方面提供了一种新思路。     

光纤陀螺温控技术的研究

温度变化将严重地影响干涉型光纤陀螺仪(IFOG)系统的零位漂移.本文在初步研究温控技术的基础上,给出一种实用的温控电路,以用于在测试温度变化所引起的零位漂移中进行温度调节与控制.通过在此电路下实测的两者变化关系曲线采取补偿措施,以减小光纤陀螺的零位漂移.     

In situ observation of NaBi(WO4)2 dendrite growth and the study on microstructure of solidification

The dendrite growth process of transparent NaBi(WO4)2 with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased in the diffusive-convective region. The growth rate of branch had the same change trends as the arm's. Based on the EPMA-EDS data of solidification structure of quenched NaBi(WO4)2 melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface during the growth process.     

Oscillation of coercivity between positive and negative in MnxGe1-x：H ferromagnetic semiconductor films

Amorphous MnxGe1-x :H ferromagnetic semiconductor films prepared in mixed Ar with 20% H2 by magnetron cosputtering show global ferromagnetism with positive coercivity at low temperatures. With increasing temperature, the coercivity of MnxGe1-x :H films first changes from positive to negative, and then back to positive again, which was not found in the corresponding MnxGe1-x and other ferromagnetic semiconductors before. For Mn0.4Ge0.6 :H film, the inverted Hall loop is also observed at 30 K, which is consistent with the negative coercivity. The negative coercivity is explained by the antiferromagnetic exchange coupling between the H-rich ferromagnetic regions separated by the H-poor non-ferromagnetic spacers. Hydrogenation is a useful method to tune the magnetic properties of MnxGe1-x films for the application in spintronics.     

槽道尺寸对平板式环路热管性能的影响

设计开发了一套平板式环路热管,比较了2 mm×1.5 mm和1 mm×1 mm(高×宽)两种蒸气槽道环路热管在不同倾角和充液率下的性能。结果发现,两种蒸气槽道在相同条件下最低启动功率相同,但前者启动时间和过渡时间较后者短。稳定运行时,除充液率为55%且功率小于150 W外,其他情况下前者运行温度比后者低。变工况运行时,随功率的增大,温度后者变化很大,而前者变化较小,前者自适应能力强。对于传热特性,两种槽道环路热管的热阻都随功率的增大而逐渐减小,最后趋于平稳;对水平、充液率为55%的系统,功率较小时前者热阻较大,功率增大后,其值大幅减小,215W时仅为0.12℃/W。     

一种基于新型查表方法的统一计算设备架构并行计算全息算法

为解决点源法计算全息速度较慢的问题,提出了一种新的查表算法,命名为三角函数查表法(T-LUT算法)。该算法是基于点源法基本的数学公式,通过一系列数学近似与恒等变换,生成了一种纯相位查找表,该查找表具有三维特性,并具有生成速度快、精度高、占用内存少等特点,克服了点源法重复计算相位的缺点。同时采用统一计算设备架构(CUDA)并行计算在图形处理器(GPU)上加以实现,并进行了三次并行优化。在算法的验证与对比实验中,采用单显卡(GPU显卡)实现T-LUT算法,在不牺牲全息图再现像质量的前提下,成功地将点源法计算全息的速度大幅度提升。实验发现在不同的物空间采样点数量的情况下,速度相对于点源法GPU运算提升30倍至近千倍不等。     

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

<正>In order to investigate their electrical characteristics,high-voltage light-emitting-diodes(HV-LEDs) each containing four cells in series are fabricated.The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors(IFs) of the HV-LEDs with different numbers of cells are 1.6,3.4,4.7,and 6.4.IF increases linearly with the number of cells increasing.Moreover,the performance of the HV-LED with failure cells is examined.The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell.The series resistance of the failure cell is 76.8Ω,while that of the normal cell is 21.3Ω.The scanning electron microscope(SEM) image indicates that different metal layers do not contact well.It is hard to deposit the metal layers in the deep isolation trenches.The fabrication process of HV-LEDs needs to be optimized.