Gas adsorption in mcm-41 porous silicas dynamic measurements using sans

The European Physical Journal E - The isothermal gas adsorption of two hexane isomers (n-hexane and cyclohexane) in the mesopores of MCM-41 silica have been investigated by small angle neutron...     

Operator stable laws: Series representations and domains of normal attraction

LetX,X ₁,X ₂,... be i.i.d. random vectors in ^d. The limit laws that can arise by suitable affine normalizations of the partial sums,S _n=X ₁+...+X _n, are calledoperator-stable laws. These laws are a natural extension to ^d of the stable laws on. Thegeneralized domain of attraction of [GDOA()] is comprised of all random vectorsX whose partial sums can be affinely normalized to converge to . If the linear part of the affine transformation is restricted to take the formn ^–B for some exponent operatorB naturally associated to thenX is in thegeneralized domain of normal attraction of [GDONA()]. This paper extends the theory of operator-stable laws and their domains of attraction and normal attraction.     

Transient behavior of a nonequilibrium plasma formed by merged beams

A low density, low temperature plasma formed by two merged beams of electrons and ions at near zero relative velocity is studied by solving a set of time-dependent rate equations. In particular, we investigate the role played by the radiative recombination (RR) and three-body recombination (TBR) on the population of excited states during the initial stage of plasma rearrangement and relaxation. It is found in the case of hydrogenic plasmas that low-lying states are filled predominantly by RR, while high Rydberg states are populated mainly by TBR. As the plasma further relaxes, the collisional excitation and de-excitation, and radiative decays become important, filling the median excited states. The dependence of the TBR and RR rates on ionic chargeZ is discussed to extend the result to plasmas of highZ ions.     

Metastasis-suppressor KAI1/CD82 induces homotypic aggregation of human prostate cancer cells through Src-dependent pathway

To investigate the functional role of KAI1/CD82, a metastasis suppressor for human prostate cancer, in the regulation of homotypic cell adhesion, we transfected KAI1 cDNA into DU 145 human prostate cancer cells and established stable transfectant clones with high KAI1/CD82 expression. The KAI1 transfectant cells exhibited significantly increased homotypic cell aggregation in comparison with the control transfectant cells. This aggregation of the KAI1 transfectants was further enhanced upon exposure to anti-CD82 antibody, suggesting that KAI1/CD82 may be involved in the intracellular signaling for the cell adhesion. Among several signal pathway inhibitors tested, PP1, an inhibitor of Src family kinases, significantly suppressed homotypic aggregation of the KAI1 transfectant cells. Ligation of KAI1/CD82 with anti-CD82 antibody increased endogenous Src kinase activity of the KAI1 transfectant cells. When different types of src expression constructs were retransfected into the KAI1-transfected DU 145 cells, kinase-negative mutant src transfectant cells exhibited much lower homotypic aggregation than the mock cells transfected with an empty vector. Moreover, homotypic aggregation of the mutant src transfectant cells was not enhanced by KAI1/CD82 ligation with anti- CD82 antibody. These results suggest that Src mediates the intracellular signaling pathway of KAI1/CD82 for the induction of homotypic adhesion of human prostate cancer cells.     

Untersuchungen über ternäre Chalkogenide. XXIV. Zur Struktur des TlGaSe2

On Ternary Chalcogenides. XXIV. The Structure of TlGaSe₂ TlGaSe₂ is monoclinic with a = 10.772(3), b = 10.771(5), c = 15.636(8) Å, ß = 100.6(3)°, Z = 16, space group Cc. The refinement yielded an R value of 0.082 for 1366 unique observed reflections (MoKα). The compound crystallizes with a layer structure with two anion layers perpendicular to c* in the unit cell. The structural motive of the layers are large corner-linked Ga₄Se₁₀- tetraeder consisting of four corner-linked GaSe₄ tetrahedra. Two adjacent layers are turned relative to each other by 90°. They are kept together by Tl¹⁺ ions, which are situated on straight lines parallel to the edges of the Ga₄Se₁₀ groups. They are surrounded by six selenium atoms forming trigonal-prismatic TlSe₆ polyhedra. 4₂ screw-axes within the layers are the reason for a strongly pronounced pseudo tetragonal symmetry. Different possibilities of stacking cause a onedimensional disorder along the c* direction. The relations between the TlGaSe₂ type and the TlSe type and also the high-pressure modifications of some compounds with the TlGaSe₂ structure are discussed.