The growth of a single crystal of Sr3CuIrO6 and its magnetic behavior compared to polycrystals

We have grown single crystals of the psuedo-one-dimensional compound Sr₃CuIrO₆, a K₄CdCl₆-derived monoclinic structure with Cu-Ir chains along the [101] direction. We present the ac and dc magnetization behavior of the single crystals in comparison with that of the polycrystalline form reported earlier. There is a distinct evidence for at least two magnetic transitions, at 5 K (T ₁) and 19 K (T ₂), with different relative magnitudes in the single and polycrystals. The low temperature magnetic relaxation behavior of both the forms is found to be widely different, exhibiting unexpected time dependence.     

Flux line lattice symmetries in the borocarbide superconductor LuNi2B2C

We compare the results of small angle neutron scattering on the flux line lattice (FLL) obtained in the borocarbide superconductor LuNi₂B₂C with the applied field along the c- and a-axes. For H‖c the temperature dependence of the FLL structural phase transition from square to hexagonal symmetry was investigated. Above 10 K the transition onset field. H ₂(T), rises sharply, bending away from H _c2(T) in contradiction to theoretical predictions of the two merging. For H‖a a first order FLL reorientation transition is observed at H _tr=3–3.5 kOe. Below H _tr the FLL nearest neighbor direction is parallel to the b-axis, and above H _tr to the c-axis. This transition cannot be explained using nonlocal corrections to the London model.     

SOME POSTERIOR DISTRIBUTIONS FOR THE LAPLACE MEAN

Two posterior distributions for the mean of the Laplace distribution are obtained by deriving the distributions of the product XY and the ratio X/Y when X and Y are Student＇s t and Laplace random variables distributed independently of each other. Tabulations of the associated percentage points are given along with computer programs for generating them.     

Powder pattern indexing using the weighted crosscorrelation and genetic algorithms

X-ray diffraction is a powerful technique for investigating the structure of crystals and crystalline powders. Unfortunately, for powders, the first step in the structure elucidation process, retrieving the unit cell parameters (indexing), is still very critical. In the present article, an improved approach to powder pattern indexing is presented. The proposed method matches peak positions from experimental X-ray powder patterns with peak positions from trial cells using a recently published method for pattern comparison (weighted crosscorrelation). Trial cells are optimized with Genetic Algorithms. Patterns are not pretreated to remove any existing zero point shift, as this is determined during optimization. Another improvement is the peak assignment procedure. This assignment is needed for determining the similarity between lines from trial cells and experiment. It no longer allows calculated peaks to be assigned twice to different experimental peaks, which is beneficial for the indexing process. The procedure proves to be robust with respect to false peaks and accidental or systematic absensences of reflections, and is successfully applied to powder patterns originating from orthorhombic, monoclinic, and triclinic compounds measured with synchrotron as well as with conventional laboratory X-ray diffractometers.     

Method for HVPE growth of thick crack-free GaN layers

Twenty-five micrometer thick GaN was grown with hydride vapor phase epitaxy (HVPE) on metal-organic chemical vapor deposition (MOCVD) grown templates on sapphire substrates with the gallium treatment step (GTS) technique with varying buffer layer thickness. The samples are studied with atomic force microscopy (AFM), etching and scanning electron microscopy (SEM), photo-luminescence (PL), X-ray diffraction (XRD) and optical microscopy. The results show that the thickness of the buffer layer is not important for the layer quality once the growth in MOCVD starts to make the transition from 3D growth to 2D growth and HVPE continues in the same growth mode. We show that the MOCVD templates with GTS technique make excellent templates for HVPE growth, allowing growth of GaN without cracks in either sapphire or GaN.