Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Effects of Different Dispersion Methods on the Microscopical Morphology of TiO2 Film

Nanocrystalline porous TiO2 films were prepared on conducting glass supports （ITO） by processed commercial TiO2 nanometre powder （P25）. Three methods of physical dispersing for TiO2 powder, i.e. grinding, magnetic stirring, sonicleaning, were used to disperse TiO2 nanometre powder. Surface morphologies of TiO2 films were observed by optic-microscope and SEM. It is found that the surface morphologies of TiO2 films are determined not only by the dispersing methods but also by the percentage of TiO2 powder in the dispersing system. Different film morphologies can be obtained under the same preparation condition but with different dispersing methods. A lot of cracks exist on the film surface for which the TiO2 slurry is dispersed by grinding. Magnetic stirring leads to some white points and micro-holes on the film surface. Only a few of micro-holes can be observed on the film surface, in which the TiO2 slurry is dispersed by sonicleaning. Different surface morphologies can also be found with different thicknesses of TiO2 films. Different film thicknesses are due to different percentages of TiO2 powder in the slurry. The related mechanism leading to different features of the surface morphologies for the TiO2 films is discussed.     

杂质对多电子方形量子点系统基态能的影响

根据密度泛函理论,用自洽迭代的方法求解二维方形量子点中有杂质时电子(N=1~12)的薛定谔方程,对绝对零度情况下处于基态电子的总能量进行了数值计算,并讨论了杂质对量子点中电子基态能量的影响,得出了方形量子点中多电子系统基态的一些性质.     

甲硅烷的分解复合的对称性

本文基于原子分子反应静力学证明甲硅烷SiH4的分解方式Ⅱ是对称性允许的,而分解方Ⅰ是对称性不许可的.     

应用具有手征流关联函数的光锥求和规则计算B(Bc)→Dlν过程的形状因子

在QCD光锥求和规则(LCSR)框架内应用具有手征流关联函数计算B(B_c)→Dlν衰变过程的弱形状因子. 所获得的形状因子的表达式仅依赖于D介子的主导级分布振幅(DA). 应用了三类D介子的分布振幅计算了形状因子F_B→D(0)和F_Bc→D(0). 在速度迁移1.142=0附近算符乘积展开(OPE)得以有效的情况下所计算的形状因子行为在误差范围内与B(B_c)→Dlν过程实验数据相一致. 在大反冲区域1.35B→D(0)是与微扰QCD(pQCD)结果相一致的. 所以本文的计算在联接格点QCD, 重夸克对称性和pQCD之间起桥梁作用，有助于进一步对B(B_c)→Dlν跃迁过程的理解. 计算 使用了在端点具有指数压低的分布振幅行为, 对F_Bc→D(0)的预言与其他方法获得的结果是可比的, 有利于具有库仑修正的三点求和规则(3PSR)方法所得的结果.     

1.444 mm Nd:YAG激光器的实验研究

 在理论分析的基础上设计了直腔结构1.444 mm Nd:YAG激光器，并进行了实验研究。获得了1.444 mm激光输出，当泵浦能量为55 J时，其最高静态激光输出310 mJ。电-光转换效率为0.56%，斜效率为0.81%。并实现了1.444 mm调Q输出，脉冲输出能量18 mJ，脉宽150 ns。     

单壁碳纳米管吸附联苯类有机物的荧光光谱分析

利用芳香族化合物对单壁碳纳米管进行了化学修饰,并利用荧光光谱以及时间分辨光谱对修饰后的单壁碳纳米管进行了表征分析.实验发现吸附对三联苯后有1个荧光峰位置发生了蓝移,这说明吸附过程使对三联苯的一些能级分布发生了变化.测量吸附前后对三联苯和蒽甲醇的荧光寿命,发现吸附后的荧光衰减曲线下降趋势更加明显,对曲线进行多指数拟合得出的荧光寿命及其数目发生了变化,分析了可能导致该现象的原因.     

具有特大磁电阻效应钙钛矿材料的制备及性能分析

通过固相烧结法制备了具有特大磁电阻效应的钙钛矿材料Pr0.64Ag0.044MnAl0.2O3.利用结构和成分分析,发现此材料只有在1 100℃高温烧结下才能生成完整的钙钛矿结构,且属于立方晶系,晶格常量a≈0.386 nm.在0.4 T的外磁场下,磁电阻值在122 K处达到最大,约为19.2%,为巨磁电阻实验提供了较好的样品.     

光指针式微小位移测量仪

光指针式微小位移测量仪巧用光路将微小的位移量放大,从光指针终端的标度盘上可以直接读取实际的位移数值.     

球差对调焦函数的影响

红外导引头成像光斑测试仪系统的球差对成像光斑质量有很大的影响,降低了光斑的能量集中度.通过对球差因素影响的研究,构造的调焦评价函数能更精确地分辨最佳像面,从而通过自动聚焦寻找最佳像面位置,是测试仪评价其光学系统质量的一个重要环节.