钌(Ⅱ)卟啉催化顺式二苯乙烯类化合物的选择性合成

由芳醛制得的腙盐在钌(Ⅱ)卟啉催化下发生自身偶合，以较高收率合成了二苯乙烯类化合物(～90％的顺式选择性)。部分中间体及目标化合物的结构经^1H NMR，^13C NMR和MS表征。     

激光相位成像雷达的研究

利用无合作目标漫反射激光相位测距的原理,对关键单元技术进行分析和设计,研制成一种用于自主式车辆视觉导引的激光相位成像雷达的原理样机.     

起爆药爆轰场和燃烧场的干涉法显示及其图像处理

本文介绍了利用脉冲YAG激光引爆起爆药产生爆轰流场或燃烧温度场,用时间序列干涉法首次获得了爆轰流场和起始燃烧过程的时间序列干涉图的实验结果.在此基础上,采用条纹曲线检测法和双三次多结点插值样条函数从干涉图上提取爆轰场冲击波的波阵面,并通过序列波阵面配准算法,定量地计算了冲击波的传播速度.同时,还定量计算了燃烧场温度随时间变化的分布.     

Thermal Rate Constants of the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） Reaction on the ^2A′ Potential Energy Surface

A quasiclassical trajectory study with the sixth-order explicit symplectic algorithm for the N（^4S）＋O2（X^3∑g^-） → NO（X^2Ⅱ） ＋O（^3P） reaction has been reported by employing a new ground potential energy surface. We have discussed the influence of the relative translational energy, the vibrational and rotational levels of O2 molecules on the total reaction cross section. Thermal rate constants at temperatures 300, 600, and 1000 K determined in this work for the reaction are 4.4 × 10^7, 1.8 × 10^10, and 3.1 × 10^11 cm^3mol^-1s^-1, respectively. It is found that they are in better agreement with the experimental data than previous theoretical values.     

FTIR spectroscopic study on the interaction between a fluoroionophore and metal ions.

A fluoroionophore sensor, N-[4-(1-pyrene)butyroyl]-L-tryptophan (PLT), has been reported. It can distinguish lead ion from other 12 metal ions via forming a pyrene dimer and it exhibits a very high sensitivity (0.15 microM) in aqueous solution (Chem. Commun., 2006, 2702). When the indole moiety in PLT was changed to benzene, in forming a new fluoroionophore of N-[4-(1-pyrene)butyroyl]-L-phenylalanine (PLP), it could not form a pyrene dimer in response to Pb(2+) in water. The present study describes the spectroscopic clarification of the intrinsic differences of the binding model between PLP and PLT in binding with Pb(2+). The model shows identical chelating bidentate coordination between COO(-) and Pb(2+) both in PLP-Pb and PLT-Pb; however, there is no indication of the interaction between the phenyl ring and the metal ion or the hydrogen bonding between amide groups in PLP-Pb. These differences in the binding model between PLP-Pb and PLT-Pb illustrate that the indole ring in PLT appears to play a crucial role in the high selectivity and sensitivity of PLT to lead(II) ion.     

抓好数学建模竞赛 推动数学教学改革

本文通过近几年组织数学建模教学和指导学生参加竞赛的实践 ,探索抓好数学建模竞赛 ,促进数学教学改革 ,推动数学素质教育 ,提高人才培养质量的途径、措施和方法     

新型噻吩基取代卟啉的合成及其荧光光谱研究

合成了两种新型噻吩基卟啉－5，15－二（2－噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7a（45．1％）和5，15－二（2－联噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7b(61.2%),并研究了它们的光谱性质，其中荧光光谱的最大发射峰蜂都在631nm处，量子产率分别为4．1％（7a)和1．4％（7b)。     

Sn-C60薄膜的紫外吸收光谱和X-射线衍射谱分析

对Sn-C60薄膜进行紫外可见光吸收，X-射线衍射和扫描电镜的测定结果显示，薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降，说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁，能带中有杂质能级的存在；样品的X射线衍射峰则对应于面心立方结构；扫描电镜结果显示薄膜为纳米级颗粒组成。     

介质极化的瞬时相位与振幅

求解电子运动的二阶微分方程，在旋转波近似下，介质在外场突然变化时产生的瞬态感应极化与外场同频，但相位总是落后，最大落后为π/2；振幅大小与初态有关，随时间按指数规律衰减，衰减快慢由介质的阻尼系数决定。     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.