多模跟踪技术在轮式侦察车图像处理器的应用

为解决目标旋转形变、遮挡、光照变化等目标跟踪的难题,对粒子滤波和尺度不变特征变换（SIFT）算法进行了改进,结合两种算法提出了决策主导模式的多模跟踪技术。该技术采用粒子滤波预测目标位置进行粗定位,SIFT特征匹配进行精定位的方法,在解决上述难题上有很好的鲁棒性。将该技术应用于轮式侦察车图像处理器,并进行了各种实验验证,结果证明了提出算法的有效性。     

Femtosecond Laser-Induced Breakdown Spectroscopy for Detection of Trace Elements in Sophora Leaves

Sophora leaves from several areas in Beijing are analysed by femtosecond laser-induced breakdown spectroscopy （femto-LIBS）. Although the used spectral detection system is not time-resolved, the spectral lines of trace mineral elements are detected and analysed. It is proven that the femto-LIBS can be an efficient method to detect mineral trace elements contained in tree leaves which is a biomonitor for atmospheric pollution assessment or botanic studies. An interesting case of correlation between trace elements detected in tree leaves and the pollution of the concerned area is presented, for the first time to our knowledge.     

光折变材料的带隙结构研究

利用光子晶体的概念和时域有限差分方法计算了当光折变材料的空间折射率呈一维正弦变化时其内部的带隙结构情况,表明在光折变材料中存在极窄的光子带隙。最后讨论了折射率(n)、折射率调制幅度(△n)、周期长度(D)及周期数(N)对光子带隙的影响。     

基于COSM的三维显微图像复原算法研究

光学分层显微成像技术(COSM)不仅可用于去除非聚焦层杂散光的影响以及噪声的干扰,而且能复原样本的清晰三维像,将成为提取微流体的三维温度和速度场分布信息的有效工具.本文研究了基于已知点扩展函数的6种COSM成像算法,详细讨论了6种COSM成像算法的原理和实现,构造了三维样本图像和点扩展函数模型,并对复原结果进行了分析....     

单纵模671nm红光激光器

利用全波片和Nd:YVO4激光器的偏振特性构成双折射滤光片,使用I类临界相位匹配LBO作为倍频晶体,在注入泵浦功率2.7W的情况下获得149mW的671nm单纵模红光输出,光-光转换率5.6%,该结构简单、紧凑,适合用于中低功率激光器。     

验证辐射强度与距离平方反比率的实验

利用Nal闪烁谱仪测量了在探测器与放射源间某个距离下对应的计数率.对测量的数据分别利用等精度最小二乘法和未知参数逼近法进行了处理,观察到在某些未知参数下,最小二乘法引起的误差很大,利用未知参数逼近法得到的值能和真实值较好接近,从而验证了辐射强度与距离平方反比率.     

Nonlinear-Ion-Acoustic-Wave Instability, Threshold, Half Width of Trapped Region and Transition Region

Nonlinear Landau damping of ion acoustic wave (IAW) is one of the most important phenomena in the ionosphere and in space and laboratory plasma as well. The instability growth rate of the IAW with electron drift, the amplitude threshold for exciting the nonlinear effects, the half widths of the trapped region with the trapped electrons are studied experimentally. Under the experimental conditions, it is shown that there is a frequency range of 140--160 kHz, within which the growth rate has the largest value of about 6×10⁴--1.5×10⁵ s^-1. We obtain the transitional region width caused by collisions theoretically and experimentally, for the first time to our knowledge. The experimental results are in good agreement with the theoretical prediction.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.