Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

干涉式光纤陀螺光路系统的物理模型

光路系统的偏振误差极大地制约着光纤陀螺精度的提高。利用相干矩阵和琼斯矩阵对光纤陀螺中光学器件和熔接点的光学参数进行描述,建立了干涉式光纤陀螺光路系统的物理模型。与之前相关文献报道相比,该模型所表达的光路系统更加接近于工程实际。在此基础上,提出一种分析光学器件和熔接点缺陷,以及光路损耗对光纤陀螺偏振误差影响的新方法。该方法可以有效地分析光路系统缺陷对零偏和标度因数的影响,在工程上可作为评价干涉式光纤陀螺光路系统性能的一个途径。     

无线激光通信在高速视频传输中的应用

利用无线激光通信传输速率高的优势,设计并实现了一套622Mbps视频传输系统。将视频转换、数据处理、激光收发等功能集中在单块电路板上,提高了灵活性。使用片内异步先进先出队列（FIFO）组成乒乓操作,对连续视频数据流进行有效切换控制。采用曼彻斯特编码较好地从接收信号中恢复出数据和时钟,有利于接收串行数据流的边界检测和同步。实验表明,本系统可以稳定地传输视频,满足地面距离应用的需要,为进一步研究激光通信各项技术提供了平台。     

一种数字控制单相全桥逆变电路运动行为分析方法研究

考虑到数字控制单相全桥逆变电路PWM调制方法和滤波器、负载结构的多样性, 以及利用状态转移矩阵对系统运动行为分析方法的局限性. 通过解析表达状态转移矩阵中的元素, 本文提出了一种可以解析描述具有N个状态变量、一个开关周期内M次拓扑 变化的数字控制单相全桥逆变电路(简称N-M数字控制单相全桥逆变电路)系统参数 与运动行为关系的分析方法. 以3-3数字控制单相全桥电压逆变电路为例对上述分析方法进行了验证, 推导出了该三阶电路发生Hopf分岔的解析判别式、稳定范围及Hopf分岔振荡频率的解析表达式, 并通过Simulink仿真及电路实验证明了理论分析的正确性.     

一种可用于酚类化合物检测的酶传感器

利用溶胶-凝胶法将辣根过氧化物酶(HRP)固定化于二氧化硅凝胶网络中构建了可用于酚类化合物检测的酶传感器。对二氧化硅载体材料进行了结构表怔。二氧化硅多孔材料的平均孔径为2.95 nm。孔径小于5 nm占总数的84.068%。由于辣根过氧化物酶的分子尺寸远远大于二氧化硅的凝胶网络的平均孔径,因此不会泄露到溶液中去,而尺寸较小的底物可以发生反应。包埋的辣根过氧化物酶在H₂O₂的存在下,能够催化氧化苯酚与4-氨基安替比林反应生成醌亚胺有色化合物。通过紫外-可见光谱测定醌亚胺有色化合物的吸光度,即可以确立苯酚的含量。对于象含氯酚类的重要污染物, 如邻氯酚、间氯酚、2,4-二氯酚,这种方法也同样适用。此外,对多次测定以后的酶的活性下降的问题进行了讨论,结果表明酶传感器可以重复使用10次以上。但响应时间会变长。     

Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment

Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power (P_max) is presented and analyzed. The degradation at both electron energies has been correlated with the displacement damage dose (D_d). A good linearity between the electron D_d and the mean P_max degradation is obtained. The concept of D_d has also been used to predict the Si solar cell response in a low-earth-orbit (Altitude 799 km, Inclination 99^o) radiation environment, considering the shielded effect of a 120 μ m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite (duration from April 2007 to July 2010), a good match can be found between the on-orbit data and the predicted results using D_d methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.     

High-temperature dielectric properties of Gd2CuO4 ceramics

A sample of Gd₂CuO₄ (GCO) has been prepared through the solid state reaction technique. Dielectric properties of this material have been measured in detail as functions of temperature (between 285 and 450 K) and frequency (20 Hz-10 MHz). A step-like increase below 330 K and a broad peak around 360 K were observed in the real part of the permittivity (ε′) which were found to be originated from the oxygen vacancy hopping motions that cause a dipolar relaxation, followed by a Maxwell-Wagner relaxation as the hopping carriers are blocked by the interfaces and surfaces of the sample.     

Quantum Tunnelling and Hawking Radiation of Schwarzchild-Anti-de Sitter Black Hole with Topological Defect

We extend Parikh＇s recent work to Schwarzchild-anti-de Sitter black hole with topological defect whose Arnowitt-Deser-Misner （ADM） mass is no longer identical to its mass parameter. We view the Hawking radiation as a tunnelling process across the event horizon and the cosmological horizon. From the tunnelling probability, we find a leading correction to the semi-classical emission rate. The result employs an underlying unitary theory.     

用于FED和PDP平板显示高压驱动电路的CMOS器件

在Synopsys TCAD软件环境下,结合中国科学院微电子研究所0.8μm标准CMOS工艺条件对于高压CMOS器件进行了工艺和器件模拟。由于考虑到与标准CMOS工艺的兼容性,高压CMOS器件均采用LDMOS结构;根据RESURF技术,对于器件的漂移区进行了优化。器件模拟结果表明,高压NMOS器件源漏击穿电压为220 V;阈值电压和驱动能力分别为0.8 V和1×10-4A/μm。高压PMOS器件源漏击穿电压为-135 V;阈值电压和驱动能力分别为-9.7 V和1.8×10-4A/μm。高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。     

相干多普勒测风激光雷达

 鉴于多普勒测风激光雷达在航空航天、遥感遥测、气象观测等军事及民用领域中的广泛应用,结合相干探测工作原理,介绍了国外几种典型波段相干多普勒测风激光雷达系统,重点分析了激光发射机/接收机、空间扫描、数据处理等关键技术,并对相干多普勒激光雷达的广阔应用前景进行了展望。指出国内相干多普勒测风激光雷达研究已取得的一些重要进展。