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871.
A. Hertz 《Graphs and Combinatorics》1989,5(1):149-157
We consider the graphs that can be obtained by deleting in a Meyniel graphG all the edges induced by an arbitrary set of nodes. These graphs will be called Slim and we prove that they are perfect. We study relations between Slim graphs and other well known classes of perfect graphs; particularly we show that the perfection of Slim graphs gives a proof to the conjecture of M. Preissmann that Meyniel graphs are locally perfect. 相似文献
872.
Large fault-tolerant interconnection networks 总被引:5,自引:0,他引:5
This paper deals with reliability and fault-tolerant properties of networks. We first survey general reliability properties of networks, in particular those concerning diameter vulnerability. Then we study in details reliability properties of some families of networks in particular de Bruijn and Kautz networks and their generalizations which appear as very good fault-tolerant networks. 相似文献
873.
W. Richard Strark 《Mathematical Logic Quarterly》1989,35(4):311-320
874.
875.
V. V. Tokarchuk 《Journal of Applied Mathematics and Mechanics》1989,53(6):708-715
The Langevin dynamics and fluctuational-dissipative relationships for the hydrodynamic fluctuations for systems which are described in the third Barnett order with respect to the gradients of the hydrodynamic variables are generalized on the basis of a kinetic approach. 相似文献
876.
877.
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880.
C. Ghezzi E. Gombia R. Mosca M. Pillan 《Applied Physics A: Materials Science & Processing》1989,48(5):457-463
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device. 相似文献