C_2H_2在Ru(10■0)表面上的分子轨道对称性

利用角分辨紫外光电子能谱对低温下（160 K）乙炔（C_2H_2）气体在Ru(10■0)表面的吸附进行了研究.实验结果表明：乙炔的C-C轴并不平行于衬底表面, C-C轴在<0001>晶向和表面法线组成的平面内有一定的倾斜.与气相乙炔分子不同,在Ru(10■0)表面吸附的乙炔分子的C-H轴不是沿C-C轴向.     

《燃料化学学报》1998年、1999年在我国化学类科技期刊中的排名

《燃料化学学报》1998年、1999年在我国化学类科技期刊中的排名 　　(据中国科技信息研究所《中国科技期刊引证报告》1998、1999数据)     

超导纳米线单光子探测器光子响应机制研究进展

超导纳米线单光子探测器(SNSPD)已在量子信息、深空激光通信、激光雷达等众多领域发挥了重要的作用.虽然SNSPD经过二十年的研究,但其光子响应本征机制还有待完善.深入理解与厘清其光子响应过程是研发高性能探测器的前提与关键.现在较为成熟的超导纳米线单光子探测器响应理论有热点模型和涡旋模型.但是这两种理论都存在一定的缺陷...     

Diffusion behavior of helium in titanium and the effect of grain boundaries revealed by molecular dynamics simulation

The microstructures of titanium(Ti), an attractive tritium(T) storage material, will affect the evolution process of the retained helium(He). Understanding the diffusion behavior of He at the atomic scale is crucial for the mechanism of material degradation. The novel diffusion behavior of He has been reported by molecular dynamics(MD) simulation for the bulk hcp-Ti system and the system with grain boundary(GB). It is observed that the diffusion of He in the bulk hcp-Ti is significantly anisotropic(the diffusion coefficient of the [0001] direction is higher than that of the basal plane),as represented by the different migration energies. Different from convention, the GB accelerates the diffusion of He in one direction but not in the other. It is observed that a twin boundary(TB) can serve as an effective trapped region for He.The TB accelerates diffusion of He in the direction perpendicular to the twinning direction(TD), while it decelerates the diffusion in the TD. This finding is attributable to the change of diffusion path caused by the distortion of the local favorable site for He and the change of its number in the TB region.     

Observation of selective surface element substitution in FeTe_(0.5)Se_(0.5) superconductor thin film exposed to ambient air by synchrotron radiation spectroscopy

A systematic investigation of oxidation on a superconductive Fe Te_(0.5)Se_(0.5)thin film,which was grown on Nb-doped SrTiO_3(001) by pulsed laser deposition,has been carried out.The sample was exposed to ambient air for one month for oxidation.Macroscopically,the exposed specimen lost its superconductivity due to oxidation.The specimen was subjected to in situ synchrotron radiation photoelectron spectroscopy(PES) and x-ray absorption spectroscopy(XAS) measurements following cycles of annealing and argon ion etching treatments to unravel what happened in the electronic structure and composition after exposure to air.By the spectroscopic measurements,we found that the as-grown FeTe_(0.5)Se_(0.5)superconductive thin film experienced an element selective substitution reaction.The oxidation preferentially proceeds through pumping out the Te and forming Fe–O bonds by O substitution of Te.In addition,our results certify that in situ vacuum annealing and low-energy argon ion etching methods combined with spectroscopy are suitable for depth element and valence analysis of layered structure superconductor materials.     

K3C60取向相变的同步辐射光电子谱研究

在190K,220K和300K3个不同温度下测量了K₃C₆₀单晶薄膜沿[111]方向发射的同步辐射角分辨光电子谱.样品温度为190K时,能够观察到导带有规律的角散,并且带结构与已报道的温度为150K时的结果基本一样.而在220K附近,导带的许多子峰消失,色散不再存在.这两个温度的实验结果与K₃C₆₀在200K存在取向相变相符合,并且可在反铁磁Ising模型基础上得到理解.这种模型的定量分析结果还首次对K₃C₆₀在200K的相变机理作出了解释,即相变是由低温下的一维无序取向结构转变为200K以上的双取向结构畴与无序分子(约占40%)的混合.室温光电子谱与低温下的结果显著不同,对应于C₆₀分子取向在室温附近的动态无序.     

Detection of Fe 3d electronic states in valence band and magnetic properties of Fe-doped ZnO film

Fe-doped ZnO film has been grown by laser molecular beam epitaxy (L-MBE) and structurally characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), all of which reveal the high quality of the film. No secondary phase was detected. Resonant photoemission spectroscopy (RPES) with photon energies around the Fe 2p-3d absorption edge is performed to detect the electronic structure in the valence band. A strong resonant effect at a photon energy of 710 eV is observed. Fe³⁺ is the only valence state of Fe ions in the film and the Fe 3d electronic states are concentrated at binding energies of about 3.8 eV and 7 eV～ 8 eV. There are no electronic states related to Fe near the Fermi level. Magnetic measurements reveal a typical superparamagnetic property at room temperature. The absence of electronic states related to Fe near the Fermi level and the high quality of the film, with few defects, provide little support to ferromagnetism.     

SiH2Cl2-NH3配比对a-SiNx:H薄膜PL峰的影响

低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx：H薄膜,在3．75eV的激光激发下,室温下发射1～3个高强度的可见荧光。在相同的沉积温度下（900℃）,选择不同的SiH2Cl2和NH3气体配比时,所得薄膜表现出不同的荧光属性,荧光峰的峰位和数目有着显著的变化。通过TEM、IR、XPS等分析手段对其原因进行了研究分析,认为不同配比下,生成的薄膜中缺陷态的种类和密度有所不同,这影响了其PL峰个数及其各峰的相对强弱。