Unambiguous identification of three beta-decaying isomers in 70Cu

Using resonant laser ionization, beta-decay studies, and for the first time mass measurements, three beta-decaying states have been unambiguously identified in 70Cu. A mass excess of -62 976.1(1.6) keV and a half-life of 44.5(2) s for the (6-) ground state have been determined. The level energies of the (3-) isomer at 101.1(3) keV with T(1/2)=33(2) s and the 1+ isomer at 242.4(3) keV with T(1/2)=6.6(2) s are confirmed by high-precision mass measurements. The low-lying levels of 70Cu populated in the decay of 70Ni and in transfer reactions compare well with large-scale shell-model calculations, and the wave functions appear to be dominated by one proton-one neutron configurations outside the closed Z=28 shell and N=40 subshell. This does not apply to the 1+ state at 1980 keV which exhibits a particular feeding and deexcitation pattern not reproduced by the shell-model calculations.     

The mass of 22Mg

Mass measurements with a relative precision of better than 1.5 x 10(-8) were performed on 22Mg and its reaction partners 21Na and 22Na with the ISOLTRAP Penning trap mass spectrometer at CERN, yielding the mass excesses D(22Mg)=-399.92(27) keV, D(21Na)=-2184.71(21) keV, and D(22Na)=-5181.56(16) keV. The importance of these results is twofold. First, a comparative half-life (Ft value) has been obtained for the superallowed beta decay of 22Mg to further test the conserved-vector-current hypothesis. Second, the resonance energy for the 21Na proton capture reaction has been independently determined, allowing direct comparisons of observable gamma radiation in nova explosions with the yield expected from models.     

Entanglement purification for quantum computation

We show that thresholds for fault-tolerant quantum computation are solely determined by the quality of single-system operations if one allows for d-dimensional systems with 8 < or = d < or = 32. Each system serves to store one logical qubit and additional auxiliary dimensions are used to create and purify entanglement between systems. Physical, possibly probabilistic two-system operations with error rates up to 2/3 are still tolerable to realize deterministic high-quality two-qubit gates on the logical qubits. The achievable error rate is of the same order of magnitude as of the single-system operations. We investigate possible implementations of our scheme for several physical setups.     

Atomic structure of antiphase domain boundaries of a thin Al2O3 film on NiAl(110)

Line defects of a thin alumina film on NiAl(110) have been studied on the atomic level with scanning tunneling microscopy at 4 K. While boundaries between two reflection domains do not expose a characteristic structure, antiphase domain boundaries are well ordered. The latter boundaries result from the insertion of a row of O atoms, as atomically resolved images of the topmost oxygen layer show. The insertion occurs only in two of the three characteristic directions of the quasihexagonal O lattice. Depending on the direction, either straight or zigzagged boundaries form. An atomic characterization of line defects on the oxide surface is a first step to correlate their topographic structure and chemical activity.     

First Measurement of the Gerasimov-Drell-Hearn Sum Rule for 1H from 0.7 to 1.8 GeV at ELSA

To verify the fundamental Gerasimov-Drell-Hearn (GDH) sum rule for the first time experimentally, we measured the helicity dependent total photoabsorption cross section with circularly polarized real photons and longitudinally polarized nucleons in the photon energy range 0.68-1.82 GeV with the tagged photon facility at ELSA. The experiment was carried out with a 4pi detection system, a circularly polarized tagged photon beam, and a frozen spin polarized proton target. The contribution to the GDH sum rule in this photon energy range is [49.9+/-2.4(stat)+/-2.2(syst)] microb.     

Determination of atomic structure of the metal-oxide interface: Pd nanodeposits on an FeO(111) film

Palladium was vapor deposited on a thin FeO(111) film grown on a Pt(111) substrate. Scanning tunneling microscopy study has revealed that Pd wets the FeO substrate and at elevated temperatures forms extended Pd(111) monolayer islands in contrast to other oxide supports previously studied. For the first time, we have imaged the metal-oxide interface structure with atomic resolution and explained the results on the basis of ab initio calculations.     

From meandering to faceting, is step flow growth ever stable?

Based on helium atom beam diffraction and scanning tunneling microscopy data, the coexistence of a meandering and a bunching instability during homoepitaxial step flow growth is established in a class of nonreconstructed, metallic vicinal surfaces, Cu (1,1,n), n=5,9,17. Specifically, the meandering instability is shown to act as a precursor to the bunching instability, indicating that a one-dimensional treatment of bunching in step flow growth is not sufficient. Our findings might be generic to step flow growth in kinetically restricted systems.     

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect cannot belong to either the widely accepted class of donor-vacancy clusters or a recently proposed class of donor pairs. First-principles calculations suggest a new class of defects consisting of two dopant donor atoms near a displaced Si atom, which forms a vacancy-interstitial pair. These complexes are consistent with the present experimental results, the measured open volume of the defects, the observed electrical activity as a function of dopant concentration, and the enhanced diffusion of impurities in the presence of deactivated dopants.     

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Über synthetische Oestrogene. I

Ohne Zusammenfassung Vorl?ufige Mitteilungen: Naturwiss.27 (1939) 131, 567.