A new quantum statistical evaluation method for time correlation functions

Considering a system ofN identical interacting particles, which obey Fermi-Dirac or Bose-Einstein statistics, we derive new formulas for correlation functions of the type (whereB _j is diagonal in the free-particle states) in the thermodynamic limit. Thereby we apply and extend a superoperator formalism, recently developed for the derivation of long-time tails in semiclassical systems. As an illustrative application, the Boltzmann equation value of the time-integrated correlation functionC(t) is derived in a straightforward manner. Due to exchange effects, the obtained t-matrix and the resulting scattering cross section, which occurs in the Boltzmann collision operator, are now functionals of the Fermi-Dirac or Bose-Einstein distribution.     

Properties of noninteger moments in a first passage time problem

We calculate the moments t ^q , whereq is not necessarily an integer, of the first passage time to trapping for a simple diffusion problem in one dimension. If a characteristic length of the system isL and t _q ~L (q) asL, then we show that there is a phase transition atq=q _c such that whenq<q _c ,(g)=0, and forq>q _c , (q) is a linear function ofq. These analytical results can be used to explain results for large moments for diffusion on a hierarchic structure. We also show how to calculate noninteger moments in terms of characteristic functions.     

The Büttiker-Landauer model generalized

Büttiker and Landauer studied scattering off an oscillating rectangular barrier in order to shed light on the time aspects of tunneling. The expression for the traversal time resulting from this study is controversial. In addition, doubts have recently been expressed on technical aspects of their work. In an attempt to clarify these issues, we investigate a generalization of their model to arbitrary oscillating barriers,V(x, t)=V ₀(x)+V ₁(x)cos t. In the process, we confirm that Büttiker and Landauer's work is technically sound. However, we show, by several examples, that no direct general relation exists between the characteristic frequency of an oscillating barrier and the duration of the tunneling process. For a wide range of realistic parameters this characteristic frequency does not even exist.This paper is dedicated to E. G. D. Cohen.     

Thermal annealing effects on grain boundary recombination activity in silicon

We have studied the influence of conventional and rapid thermal treatments at 850°C for 30 min and 10 s, respectively, on the recombination activity of the9,13 (P-type) and25 (N-type) grain boundaries in silicon. The analyses were made by scanning electron microscopy (SEM) working in the electron beam induced current mode (EBIC) and completed by minority carrier diffusion length measurements. The main result obtained from this study shows the importance of the rapid thermal process as a suitable thermal treatment for polycrystalline materials.     

Magnetism in very thin films of permalloy measured by spin polarized cascade electrons

The spin polarizationP of the low energy cascade electrons excited with a primary unpolarized electron beam is measured with ultrathin films of permalloy (Ni₈₀Fe₂₀) as a function of film thickness, external magnetic field, and temperatureT. Surface adsorbates of small concentrations of less than 10% of a monolayer can change the Curie point and the saturation value ofP ₀(T0) by as much as 30%. The Ta-substrate induces a magnetically dead region in permalloy. Conventional spin wave theory cannot account for the observed smallT-dependence of the magnetizationM. Films on a nonmagnetic substrate are compared to similar films coupled to bulk permalloy over an interface of Ta. TheT-dependence ofM with the coupled films can be explained by spin wave theory. At lowT, the films coupled to the bulk exhibit a faster decrease ofM than the uncoupled films. We propose that this thermal stabilization of the magnetization in very thin ferromagnetic films is due to quenching of the long wavelength spin modes.     

Properties of RF sputtered ZnxCd1−xS thin films

Zn _x Cd_1–x S thin films (0x0.20) were prepared using rf sputtering in argon atmosphere and characterized using X-ray diffraction, optical transmission, electrical resistivity and photoconductive decay measurements. The films were found to possess hexagonal structure. The crystallite size and degree of preferential orientation were found to decrease with the increase ofx and to improve upon annealing in vacuum at 250 °C. The transmission edge shifted towards shorter wavelengths with the increase ofx in agreement with the expected shift in the energy band gap. The films were found to exhibit room temperature resistivity in the range 100–1000 cm. The obtained values of long wavelength transmission (70–80%) and minority carrier diffusion length (30 m) are high enough for the application of these films in the field of solar cells.     

Dispersive anisotropic ballistic phonon propagation in [100] GaAs

We report experimental observations of the phonon focusing pattern in [100] GaAs using low temperature electron beam scanning for phonon generation. The typical dispersive effects for high-frequency phonons expected from the calculations by Tamura have clearly been observed using PbIn tunnel junctions for phonon detection. The quantitative comparison of our experimental results with the frequency dependent calculations by Tamura allowed to determine the dominant phonon frequencies contributing to the detector signal in our different experiments. Above the temperature of the -point the dominant phonon frequencies appear to be shifted considerably to lower values, which could be explained by a heating effect in the liquid-He layer adjacent to the tunnel junction detector. By comparing the observed magnitude of the detector signal with different theoretical treatments of the detector response, we have found satisfactory agreement for a model where the perturbation due to the high-frequency phonons is restricted to the base electrode of the detector reached first by the phonons following their passage through the crystal.