High-Power CO2 Laser System with Repetition Rate Operation for High Current Multicharged Heavy Ion Generations

Experimental and numerical calculation results devoted to development of an optical system for an ion source based on a repetition rate CO₂ laser are described. The laser chain consists of a master oscillator, gas absorber cells, and a four-pass amplifier. The optical system provides smooth laser pulses with variable duration and high spatial quality that ensures efficiency for plasma heating and ion generation. The parameters of the plasma ion component measured in the CERN laboratory are applied for a lead target illumination.     

Effects of localization of the areas of sound scattering by surface wind waves

Experimental studies of the scattering of a monochromatic sound signal by a rough sea surface are carried out. The signal is produced by a point source in a shallow-water basin. The measurements are performed with the use of horizontal and vertical linear receiving arrays. The experimental data are compared with the estimates obtained on the basis of the model developed by the authors for resonant sound scattering by surface roughness. A satisfactory agreement between the experiments and the calculations is achieved. It is shown that the scattered signal is formed within small surface areas, whose sizes have the same order of magnitude as the first Fresnel zone with respect to the source and the receiving system.     

Relativistic quantum theory of cyclotron resonance in a medium

The relativistic quantum theory of cyclotron resonance in a medium with arbitrary dispersive properties is presented. The quantum equation of motion for a charged particle in the field of a plane electromagnetic wave and in the uniform magnetic field in a medium is solved in the eikonal approximation. The probabilities of induced multiphoton transitions between the Landau levels in a strong laser field are calculated.     

DX<Superscript>−</Superscript> center formation in planar-doped GaAs:Si in strong electric fields

The kinetics of current decay and partial restoration in planar doped GaAs:Si due to the formation of DX^? centers in strong electric fields has been experimentally studied. The existence of thresholds with respect to the field strength and donor concentration is explained. A model of the DX^? center formation is proposed, which is based on the notions about variation of the depth and width of a potential well created by planar doping, caused by the redistribution of hot electrons between quantum confinement subbands. As a result, the energy level of DX^? centers, which is situated above the potential well depth in the absence of strong field, decreases and falls within the potential well. This makes possible the DX^? center formation, provided that hot electrons, occupying the resonance electron levels in the conduction band, simultaneously excite local vibrational modes.