The stable forking conjecture and generic structures

 We prove that for any simple theory which is constructed via Fr?issé-Hrushovski method, if the forking independence is the same as the d-independence then the stable forking property holds. Received: 22 January 2001 / Published online: 19 December 2002 This article is part of the author's D-Phil thesis, written at the University of Oxford and supported by the Ministry of Higher Education of Iran. The author would like to thank the Institute for Studies in Theoretical Physics and Mathematics (IPM), Tehran, Iran, for its financial support whilst working on this article. Mathematics Subject Classification (2000): 03C45 Key words or phrases: Generic structures – Fr?issé-Hrushovski method – Predimension – Simple theories – Stable theories – Stable forking conjecture     

An EOQ model with process reliability considerations

The classical economic order quantity (EOQ) model assumes that items produced are of perfect quality and that the unit cost of production is independent of demand. However, in realistic situations, product quality is never perfect, but is directly affected by the reliability of the production process. In this paper, we consider an EOQ model with imperfect production process and the unit production cost is directly related to process reliability and inversely related to the demand rate. In addition, a numerical example is given to illustrate the developed model. Sensitivity analysis is also performed and discussed.     

Approaches to sharing knowledge in group problem structuring

Problem-structuring techniques are an integral aspect of ‘Soft-OR’. SSM, SAST, Strategic Choice, and JOURNEY Making, all depend for their success on a group developing a shared view of a problem through some form of explicit modelling. The negotiated problem structure becomes the basis for problem resolution. Implicit to this process is an assumption that members of the group share and build their knowledge about the problem domain. This paper explores the extent to which this assumption is reasonable. The research is based on detailed records from the use of JOURNEY Making, where it has used special purpose Group Support software to aid the group problem structuring. This software continuously tracks the contributions of each member of the group and thus the extent to which they appear to be ‘connecting’ and augmenting their own knowledge with that of other members of the group. Software records of problem resolution in real organisational settings are used to explore the sharing of knowledge among senior managers. These explorations suggest a typology of knowledge sharing. The implications of this typology for problem structuring and an agenda for future research are considered.     

InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.     

一个耦合系统自由边界问题的整体古典解

§ 1　ＩｎｔｒｏｄｕｃｔｉｏｎＩｎｔｈｉｓｐａｐｅｒｗｅｄｉｓｃｕｓｓｔｈｅｇｌｏｂａｌｃｌａｓｓｉｃａｌｓｏｌｕｔｉｏｎｏｆａｍｕｌｔｉｄｉｍｅｎｓｉｏｎａｌｑｕａｓｉｓｔａｔｉｏｎａｒｙｐｒｏｂｌｅｍ .Ｔｈｅｐｒｏｂｌｅｍｃｏｍｅｓｆｒｏｍｔｈｅｄｉｓｃｕｓｓｉｏｎｏｆａｇｒｏｗｔｈｍｏｄｅｌｏｆｓｅｌｆｍａｉｎｔａｉｎｉｎｇｐｒｏｔｏｃｅｌｌ(ｓｅｅ [1— 3])ｉｎｍｕｌｔｉｄｉｍｅｎｓｉｏｎａｌｃａｓｅ .Ｔｈｅｐｒｏｔｏｃｅｌｌｃａｎｂｅｖｉｓｕａｌｉｚｅｄａｓｈａｖｉｎｇａｐｏｒｏｕｓｓｔ…     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染     

Inner Radius of Univalence for a Strongly Starlike Domain

 The inner radius of univalence of a domain D with Poincaré density ρ _D is the possible largest number σ such that the condition ∥ S _f ∥ _D  = sup _{w∈ D} ρ _D (w) ⁻²∥ S _f (z) ∥ ≤ σ implies univalence of f for a nonconstant meromorphic function f on D, where S _f is the Schwarzian derivative of f. In this note, we give a lower bound of the inner radius of univalence for strongly starlike domains of order α in terms of the order α. The author was partially supported by the Ministry of Education, Grant-in-Aid for Encouragement of Young Scientists, 11740088. A part of this work was carried out during his visit to the University of Helsinki under the exchange programme of scientists between the Academy of Finland and the JSPS. Received November 26, 2001; in revised form September 24, 2002 Published online May 9, 2003