Non-Trivial t-Intersection in the Function Lattice

The function lattice, or generalized Boolean algebra, is the set of ℓ-tuples with the ith coordinate an integer between 0 and a bound n_i. Two ℓ-tuples t-intersect if they have at least t common nonzero coordinates. We prove a Hilton–Milner type theorem for systems of t-intersecting ℓ-tuples.Received September 29, 2004     

Oscillations of linear integro-differential equations

Sufficient conditions which guarantee that certain linear integro-differential equation cannot have a positive solution are established.     

The linear polarization constant of R n

Summary He present work deals with estimations of the n-th linear polarization constant c(H)_n of an n-dimensional real Hilbert space H. We provide some new lower bounds on the value of sup_║y║=1 │1,y> ... n,y>│, where x₁, ... ,x_n are unit vectors in H. In particular, the results improve an earlier estimate of Marcus. However, the intriguing conjecture c(H) _n= n^n/2 remains open.     

A Lieb-Thirring Bound for a Magnetic Pauli Hamiltonian

A Lieb-Thirring-Sobolev type inequality for Pauli Hamiltonians with magnetic fields is derived. The bound is in terms of an effective field, whose energy is comparable to that of the magnetic field itself. An application to the stability of matter in magnetic fields is given. Received: 19 September 1996 / Accepted: 3 January 1997     

Analytic solutions of the Schrödinger equation for the modified quartic oscillator

No analytic solutions of the Schrödinger equation are known for the quartic anharmonic oscillator. We show in this paper that there are closely related modified quartic oscillators with the potential depending on |x| for which analytic solutions for some states exist. These results can be extended to the higher order oscillators     

Open Problems

Periodica Mathematica Hungarica -     

Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N₂O and SiH₄, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiO _x films by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.