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981.
Raman scattering intensities of the NO2 symmetric stretching vibration band were measured for some aromatic nitrocompounds. It was shown that in the case of ortho alkyl-substituted nitrobenzenes, the intensities decrease in an orderly fashion with the increase of the degrees of twisting of NO2 group from the plane of benzene ring. From this result, it was assumed that the factor determining the intensities in question is the conjugation effect between NO2 group and benzene ring. Then, the intensities for some para substituted nitrobenzenes were examined, and the influence of substituents was discussed in terms of the conjugation effect. It was shown that when the electron donating character of substituents becomes stronger, the intensities intensity change among the compounds. The more experimental data and the detailed theoretical analysis of them are necessary not only for the elucidation of spectroscopic aspects of the intensity in question, but also for establishing the criterion for the application of it to the group type analysis and the microanalysis. Therefore, further experimental and theoretical examinations are required and now proceeding in our laboratory. 相似文献
982.
本文讨论随机动态线性经济系统:Yt=AY_(t-1)+b十μ_t在矩阵A为一般情形下的稳定性问题。并给出该系统稳定的充要条件。 相似文献
983.
ONTHEMIXEDPROBLEMSINANEIASTICPIANEWITHPER1ODICCRACKSZhengKe(郑可)(WuhanUniversity)ONTHEMIXEDPROBLEMSINANEIASTICPIANEWITHPER1ODI... 相似文献
984.
采用基于密度泛函理论的第一性原理赝势法对Ag-N共掺杂ZnO体 系以及间隙N和间隙H掺杂p型ZnO: (Ag, N)体系的缺陷形成能和离化能进行了研究. 结果表明, 在AgZn和NO所形成的众多受主复合体中, AgZn-NO受主对不仅具有较低的缺陷形成能同时其离化能也相对较小, 因此, AgZn-NO受主对的形成是Ag-N共掺ZnO体系实现p型导电的主要原因. 研究发现, 当ZnO: (Ag, N)体系有额外间隙N原子存在时, AgZn-NO受主对容易与Ni形成AgZn-(N2)m O施主型缺陷, 该施主缺陷的形成降低了Ag-N共掺ZnO的掺杂效率因而不利于p型导电. 当间隙H引入到ZnO: (Ag, N)体系时, Hi易与AgZn-NO受主对形成 受主-施主-受主复合结构(AgZn-Hi-NO), 此复合体的形成不仅提高了AgZn-NO受主对在ZnO中的固溶度, 同时还能使其受主能级变得更浅而有利于p型导电. 因此, H辅助Ag-N共掺ZnO可能是一种有效的p型掺杂手段.
关键词:
p型ZnO
缺陷形成能
受主离化能
第一性原理 相似文献
985.
We present in this paper a model study on the “order-by-disorder” process in the cyclic phase of spin-2 condensate, which forms a family of incommensurable, spiral degenerate ground states. On the basis of the ordering mechanism of entropic splitting, it is demonstrated that the energy corrections resulting from quantum fluctuations of disorder lift the accidental degeneracy of the cyclic configurations and thus lead to an eventual spiral order called the cyclic order. The order-by-disorder phenomenon is then realized even if the magnetic field exists. Finally, we show that our theoretic observations can be verified experimentally by direct detection of the cyclic order in the 87Rb condensate of a spin-2 manifold with a weak magnetic field. 相似文献
986.
Polypropylene grafted silane and styrene (named PP-g-Si/St in this article) was successfully prepared by radical graft polymerization initiated by γ-ray irradiation. The influence of total absorbed dose on the graft ratio of vinyltrimethoxysilane onto PP and the melt flow rate (MFR) of the PP-g-Si/St product were studied. The effect of graft ratios of vinyltrimethoxysilane on the melting point and nonisothermal crystallization kinetics of PP-g-Si/St was investigated by the method of differential scanning calorimetry (DSC). With increasing vinyltrimethoxysilane and styrene (used as viscosity modifier and free radical source) grafted on PP, the melting point of PP-g-Si/St became lower. Several different analysis methods, including those of Avrami, Jeziorny, and Mo and colleagues, were employed to describe the nonisothermal crystallization process of the grafted samples. The results indicate that the peak temperature of crystallization of PP-g-Si/St sample was lower than that of virgin PP. Crystallization kinetics revealed that the rates of nucleation and growth were affected differently by the graft ratio of vinyltrimethoxysilane onto PP. The activation energy was calculated on the basis of the method of Kissinger, and the values were 253.6 and 215.7 kJ/mol for virgin PP and PP-g-Si/St, respectively. 相似文献
987.
The g factors g // and g ⊥ of the ground Γ6(2 T 2) and excited Γ4,5(2 E), Γ6(2 E) states for trigonal Cu2+ centres in ZnO crystals are calculated from three theoretical methods, the complete diagonalization (of the energy matrix) method, the second-order perturbation method (PTM-I) and the simplified second-order perturbation method (PTM-II, this method was described in an earlier paper). These methods are based on the cluster approach in which the spin-orbit coupling parameters ζ, ζ′ and the orbital reduction factors k, k′ are calculated from a semi-empirical molecular orbital method. The crystal-field parameters used in the calculations are obtained from the superposition model and so the defect structure of Cu2+ centres in ZnO can be acquired. The calculated g factors from the three methods are in reasonable agreement with the experimental values and the defect structure of Cu2+ centres in ZnO is acquired. It appears that in some cases the approximate PTM can be applied in the studies of g factors of various states. The conditions that the PTM are ineffective are discussed. 相似文献
988.
To realize spectral diffuse reflectance scale in 0/d geometric condition at National Institute of Metrology in China (NIM), a facility based on a non-standard auxiliary integrating sphere method with special structure has been built up and a correction method for the influence on the thickness of PTFE (polytetrafluoroethylene) coating at the port of auxiliary integrating sphere is mainly discussed. The uncertainty of spectral diffuse reflectance in NIM is approximately 0.25% (k = 2) in 380–800 nm. This facility has been used to establish China diffuse reflectance scales in the VIS–NIR part of the spectrum. This system and correction method presented in this paper can be easily implemented on most commercial spectrophotometers with a lower cost. 相似文献
989.
Wenkai Liang Zheng Chen Fan Yang Huiqiang Zhang 《Proceedings of the Combustion Institute》2013,34(1):695-702
The effects of Soret diffusion on premixed syngas/air flames at normal and elevated temperatures and pressures are investigated numerically including detailed chemistry and transport. The emphasis is placed on assessing and interpreting the influence of Soret diffusion on the unstretched and stretched laminar flame speed and Markstein length of syngas/air mixtures. The laminar flame speed and Markstein length are obtained by simulating the unstretched planar flame and positively-stretched spherical flame, respectively. The results indicate that at atmospheric pressure the laminar flame speed of syngas/air is mainly reduced by Soret diffusion of H radical while the influence of H2 Soret diffusion is negligible. This is due to the facts that the main reaction zone and the Soret diffusion for H radical (H2) are strongly (weakly) coupled, and that Soret diffusion reduces the H concentration in the reaction zone. Because of the enhancement in the Soret diffusion flux of H radical, the influence of Soret diffusion on the laminar burning flux increases with the initial temperature and pressure. Unlike the results at atmospheric pressure, at elevated pressures the laminar flame speed is shown to be affected by the Soret diffusion of H2 as well as H radical. For stretched spherical flame, it is shown that the Soret diffusion of both H and H2 should be included so that the stretched flame speed can be accurately predicted. Similar to the laminar flame speed, the Markstein length is also reduced by Soret diffusion. However, the reduction is found to be mainly caused by Soret diffusion of H2 rather than that of H radical. Moreover, the influence of Soret diffusion on the Markstein length is demonstrated to decrease with the initial temperature and pressure. 相似文献
990.
Using full-potential linearized augmented plane wave (FLAPW) method, we investigated the effects of intrinsic vacancies on electronic and magnetic properties in graphene-like ZnO nanosheets. The results show that the oxygen vacancy (VO) has no influence on magnetism in ZnO nanosheet, whereas the Zn vacancy (VZn) lead to spin polarization of the nanostructures with a total magnetic moment of 2.0μB due to O-2p and Zn-3d hybridization. When the distance of two VZn defects increases to 6.499 Å, the system shows an intriguing half-metallic character with 100% spin-polarized carriers due to O(2p)–Zn(3d)–O(2p) coupling chain between two VZn defects. 相似文献