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91.
The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.  相似文献   
92.
通过软件实现了用 P C 机调用日本 Rigaku 公司生产的 D/ max 一类 X 射线衍射仪测量数据,利用 P C 机的复杂计算功能,使原有仪器也可以进行新的结构分析工作,扩展了仪器的功能。  相似文献   
93.
This article describes a new and simple method for preparing polyimide nanocomposites that have very low dielectric constants and good thermal properties: simply through blending the polyimide precursor with a fluorinated polyhedral oligomeric silsesquioxane derivative, octakis(dimethylsiloxyhexafluoropropyl) silsesquioxane (OF). The low polarizability of OF is compatible with polyimide matrices, such that it can improve the dispersion and free volume of the resulting composites. Together, the higher free volume and lower polarizability of OF are responsible for the lower dielectric constants of the PI‐OF nanocomposites. This simple method for enhancing the properties of polyimides might have potential applicability in the electronics industry. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 6296–6304, 2008  相似文献   
94.
Unphysical behavior in the QR algorithm based least squares determination of the expansion coefficients of the charge density obtained from limited information about the charge form factor occurs when the spread of the singular values in the matrix relating these quantities becomes too large. Setting the smallest singular values equal to zero in the singular value decomposition used in the minimum norm method yields a much more reasonable determination of the charge density. Increasing the size of the basis without increasing the range of the prior information about the charge form factor leads to ambiguities in the determination of the charge density. Numerical results in an analytic model are presented.  相似文献   
95.
In this research, poly(methyl methacrylate)‐b‐poly(butyl acrylate) (PMMA‐b‐PBA) block copolymers were prepared by 1,1‐diphenylethene (DPE) controlled radical polymerization in homogeneous and miniemulsion systems. First, monomer methyl methacrylate (MMA), initiator 2,2′‐azobisisobutyronitrile (AIBN) and a control agent DPE were bulk polymerized to form the DPE‐containing PMMA macroinitiator. Then the DPE‐containing PMMA was heated in the presence of a second monomer BA, the block copolymer was synthesized successfully. The effects of solvent and polymerization methods (homogeneous polymerization or miniemulsion polymerization) on the reaction rate, controlled living character, molecular weight (Mn) and molecular weight distribution (PDI) of polymers throughout the polymerization were studied and discussed. The results showed that, increasing the amounts of solvent reduced the reaction rate and viscosity of the polymerization system. It allowed more activation–deactivation cycles to occur at a given conversion thus better controlled living character and narrower molecular weight distribution of polymers were demonstrated throughout the polymerization. Furthermore, the polymerization carried out in miniemulsion system exhibited higher reaction rate and better controlled living character than those in homogeneous system. It was attributed to the compartmentalization of growing radicals and the enhanced deactivation reaction of DPE controlled radical polymerization in miniemulsified droplets. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 4435–4445, 2009  相似文献   
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The electrical characteristics of thin TiO2 films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO2 film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10−2 and 1.1×10−4 A/cm2 at +2 V bias and 1.6×10−1 and 8.3×10−4 A/cm2 at −2 V bias. The lower leakage currents of TiO2 with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×1013 cm2, respectively. The lowest mid-gap interface state density is around 7.6×1011 cm−2 eV−1. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.  相似文献   
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