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111.
Summary The pH versus fluorescence intensity profiles of a series of new pH-indicators are reported. They are characterized by two pKa-values in the 3.7–4.9 and 6.9–7.9 range, respectively. The strong change in fluorescence intensity with pH allows the determination of pH's over a much wider range (typically 2–9) than with one-step indicators. They are therefore considered to be of potential utility for measurement of pH over the neutral and slightly acidity range which occurs, for instance, in bioliquids such as urine.
Eine neue Gruppe fluorescierender pH-Indicatoren für einen erweiterten pH-Bereich
Zusammenfassung Die Fluorescenzintensitätsprofile als Funktion des pH-Wertes einer Reihe von neuen pH-Indicatoren werden untersucht. Sie sind charakterisiert durch zwei pKa-Werte im Bereich 3,7–4,9 bzw. 6,9–7,9. Die gefundene starke Änderung der Fluorescenzintensität mit dem pH-Wert erlaubt eine pH-Bestimmung über einen viel weiteren Bereich (typischerweise 2 – 9) als mit einstufigen Indicatoren. Aus diesem Grund werden sie als potentiell nützlich angesehen zur Messung von pH-Werten im neutralen und schwach sauren Bereich, wie er z.B. in biologischen Flüssigkeiten, etwa im Urin, gegeben ist.
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113.
Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.
Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen
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114.
115.
In the present work, a quantitative analysis of the phase compositions by Mössbauer effect spectroscopy of solid and conventional hydrogen disproportionated Pr13.7Fe80.3B6.0 and Pr13.7Fe63.5Co16.7Zr0.1B6.0 alloys was carried out. Significant amounts of intermediate borides t-Fe3B and Pr(Fe, Co)12B6 were detected after solid hydrogen disproportionation treatment in Pr13.7Fe80.3B6.0 and Pr13.7Fe63.5Co16.7Zr0.1B6.0 alloys, respectively. After conventional hydrogenation–disproportionation–desorption–recombination treatment these phases were not detected and in no case residual Pr2Fe14B-phase was found. It was observed that the amount of intermediate borides after disproportionation can be correlated with the degree of texture after recombination at various temperatures.  相似文献   
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V02-based thin film materials on silicon substrates are fabricated by ion beam sputtering and a post-annealing which is different from the conventional fabricating method. An infrared linear microbolometer array with 128 pixels is prepared using as-deposited vanadium dioxide thin films. Optical and electrical properties for V02-based microbolometer array are tested.  相似文献   
118.
Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 102-103 times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.  相似文献   
119.
The paper presents an analytical study of blood flow through a stenosed artery using a suitable mathematical model. The artery is modelled as an anisotropic viscoelastic cylindrical tube containing a non-Newtonian viscous incompressible fluid representing blood. The blood flow is assumed to be characterized by the Herschel–Bulkley model. The effect of the surrounding connective tissues on the motion of the arterial wall has been incorporated. Initially, the relevant solutions of the boundary value problem are obtained in the Laplace transform space, through the use of a suitable finite difference technique. Laplace inversion is carried out by employing suitable numerical techniques. Finally, the variations of the vascular wall displacements, the velocity distribution of the blood flow, the flux, the resistance to flow and the wall shear stress in the stenotic region are quantified through numerical computations and presented graphically.  相似文献   
120.
Summary Cold neutrons at the external neutron guide laboratory (ELLA) of the KFA Jülich are used to demonstrate their profitable application for multielement characterization of biological materials. The set-up and experimental conditions of the Prompt Gamma Cold Neutron Activation Analysis (PGCNAA) device is described in detail. Results for C, H, N, S, K, B, and Cd using synthetic standards and the “ratio” technique for calculation are reported for several reference materials and prove the method to be reliable and complementary with respect to the elements being determined by INAA. IAEA fellow at the KFA from 6. 3. 91 to 2. 9. 91 on contract No. VIE/9016R.  相似文献   
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