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991.
Using the principle of minimal energy and S-W model, the exchange bias for ferromagnetic/antiferromagnetic bilayers has been
investigated when the uniaxial anisotropy is misaligned with the exchange anisotropy. According to the relation between the
energy of the bilayer and the orientation of ferromagnetic magnetization, it is found that the bilayer will be in the monostable
state or bistable state when the external field is absent in the initial magnetization state. The monostable state or bistable
state of the bilayer, which determines the angular dependence of exchange bias directly, is controlled by the competition
between the exchange anisotropy and uniaxial anisotropy. When the applied field is parallel to the intrinsic easy axes and
intrinsic hard axes, one of the switching fields of the hysteresis loop shows an abrupt change, while the other keep continuous
by analyzing the magnetization reversal processes. Consequently, the exchange bias field and the coercivity will show a jump
phenomenon. The numerical calculations indicate that both the magnitude and direction of the exchange anisotropy will significantly
affect the angular dependence of exchange bias. The jump phenomenon of exchange bias is an intrinsic property of the bilayer,
which is dependent on the interfacial exchange-coupling constant, the orientation of the exchange anisotropy, the thickness
and uniaxial anisotropy constant of the ferromagnetic layer. 相似文献
992.
In this paper, we study the 0+ nonet mesons as tetraquark states with interpolating currents inspired by the color-magnetic wave function. This wave function
is the eigenfunction of an effective color-magnetic Hamiltonian with the lowest eigenvalue, meaning that the state depicted
by this wave function is the most stable one and is the most probable to be observed in experiments. We perform an OPE calculation
up to dimension-eight condensates and find that the best QCD sum rule is achieved when the current inspired by the color-magnetic
wave function is a proper mixture of the tensor and pseudoscalar diquark-antidiquark bound states. Compared with previous
results, to sigma(600) and kappa(800), our results appear better, due to larger pole contribution. The direct instanton contributions
are also considered, which yields a consistent result with previous OPE results. Finally, we also discuss the h¢ \eta{^\prime} problem as a possible six-quark state. 相似文献
993.
介绍了一种新的表面和频振动光谱方法: 定量手性检测中的双偏振角方法. 一般来讲表面光谱信号中非手性项贡献最强,而纯界面手性信号要比非手性信号弱两到三个数量级. 因此在和频振动光定量测量和分析界面手性的贡献问题上存在困难. 在和频振动光谱的双偏振角方法中,通过固定入射红外光偏振方向,并同时改变入射可见光和初涉和频信号光的偏振角进行测量. 这样所得到的偏振依赖的和频振动光谱信号能够直接给出界面手性贡献的特征,并
且能够用于准确测量界面的手性和非手性贡献. 对双偏振角方法进行了描述,并且通过S和R手性的柠檬烯空 相似文献
994.
Power grids have been studied as a typical example of real-world complex networks. Different from previous methods, this paper proposes a hybrid approach for structural vulnerability analysis of power transmission networks, in which a DC power flow model with hidden failures is embedded into the traditional error and attack tolerance methodology to form a new scheme for power grids vulnerability assessment and modeling. The new approach embodies some important characteristics of power transmission networks. Furthermore, the simulation on the standard IEEE 118 bus system demonstrates that a critical region might exist and when the power grid operates in the region, it is vulnerable to both random and intentional attacks. Finally, a brief theoretical analysis is presented to explain the new phenomena. 相似文献
995.
In this paper, ultrasonic irradiation was utilized for improving the corrosion resistance of phosphate coatings on aluminum alloys. The chemical composition and morphology of the coatings were analyzed by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). The effect of ultrasonic irradiation on the corrosion resistance of phosphate coatings was investigated by polarization curves and electrochemical impedance spectroscopy (EIS). Various effects of the addition of Nd2O3 in phosphating bath on the performance of the coatings were also investigated. Results show that the composition of phosphate coating were Zn3(PO4)2 · 4H2O(hopeite) and Zn crystals. The phosphate coatings became denser with fewer microscopic holes by utilizing ultrasonic irradiation treatment. The addition of Nd2O3 reduced the crystallinity of the coatings, with the additional result that the crystallites were increasingly nubby and spherical. The corrosion resistance of the coatings was also significantly improved by ultrasonic irradiation treatment; both the anodic and cathodic processes of corrosion taking place on the aluminum alloy substrate were suppressed consequently. In addition, the electrochemical impedance of the coatings was also increased by utilizing ultrasonic irradiation treatment compared with traditional treatment. 相似文献
996.
利用第一性原理研究了低温及高温相Ca(BH4)2络合物的电子结构、晶格振动及其反应焓。计算结果表明:低温及高温相Ca(BH4)2中Ca+2与[BH4]-以离子键形式相结合,[BH4]-离子中B原子和H原子以共价键形式相结合,对该共价键有贡献的主要是B原子的2p轨道电子,H原子的1s轨道电子。Ca(BH4)2可能的反应路径为:Ca(BH4)2→2CaH2+CaB6+10H2,该反应在300K下反应焓为43.22 kJ/mol H2。拉伸B—H键所对应的声子频率较高,其值为2360~2500cm-1,这可能是导致B—H键断裂释放氢气需要较高温度的主要原因之一。 相似文献
997.
研究广义Birkhoff系统的平衡稳定性问题.建立了自治广义Birkhoff系统的平衡方程;给出了自治广义Birkhoff系统的一次近似方程,利用Lyapunov一次近似理论,建立了系统平衡状态稳定性的判据;构建了Lyapunov函数,利用Lyapunov直接法,建立了自治广义Birkhoff系统平衡状态稳定性的判据.给出了若干算例以说明结果的应用. 相似文献
998.
运用以密度泛函理论为基础的相对论性离散变分方法(DV-Xα)模拟计算了完整的和含有F心、F+心以及F2心的碘化铯(CsI)晶体的电子结构,得到了含F心和F+心以及F2心的CsI晶体电子态密度分布以及它们可能产生的光学跃迁模式.计算结果表明,含F心和F2心的CsI晶体的禁带宽度明显变窄,F心和F2心的能级都出现在禁带中并且作为施主能级位于导带底部,利用过渡态理论计算得到其能级向Cs的5d轨道发生光学跃迁,能量跃迁值分别为1.69eV和1.15eV,该结果与实验结果完全一致,F+心没有能级出现在禁带中.计算结果从理论上成功地解释了碘化铯晶体经过辐照后电子型色心所产生的吸收带起源问题. 相似文献
999.
采用基于密度泛函理论的第一性原理赝势法对B缺陷在ZnO中的存在形式进行了理论分析,对B-N共掺杂ZnO体系的晶格结构、杂质形成能、杂质态密度及电子结构进行了系统的研究.研究表明,B缺陷在掺杂体系中主要以BZn的形式存在,这种结构会引起相应的晶格收缩;研究发现与以往的N掺杂相比,共掺结构具有更低的杂质形成能和更高的化学稳定性,因此更加适合掺杂.此外,共掺能够形成更低的受主能级,因而减小了受主的杂质电离能,提高了受主态密度;研究显示共掺结构下的杂质N原子与体相Zn原子之间的键合能力提高,受主原子得电子的能力增强,因此B-N共掺有望成为一种更为有效的p型掺杂手段. 相似文献
1000.
Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors 下载免费PDF全文
SiN_x is commonly used as a passivation material for
AlGaN/GaN high electron mobility transistors (HEMTs). In this paper,
the effects of SiN_x passivation film on both two-dimensional
electron gas characteristics and current collapse of AlGaN/GaN HEMTs
are investigated. The SiN_x films are deposited by high- and
low-frequency plasma-enhanced chemical vapour deposition, and they
display different strains on the AlGaN/GaN heterostructure, which
can explain the experiment results. 相似文献