Effects of hydraulic pressure on the stability and transition of wetting modes of superhydrophobic surfaces

The underlying mechanisms of stability, metastability, or instability of the Cassie-Baxter and Wenzel wetting modes and their transitions on superhydrophobic surfaces decorated with periodic micropillars are quantitatively studied in this article. Hydraulic pressure, which may be generated by the water-air interfacial tension of water droplets or external factors such as raining impact, is shown to be a key to understanding these mechanisms. A detailed transition process driven by increasing hydraulic pressure is numerically simulated. The maximum sustainable or critical pressure of the Cassie-Baxter wetting state on a pillarlike microstructural surface is formulated for the first time in a simple, unified, and precise form. This analytic result reveals the fact that reducing the microstructural scales (e.g., the pillars' diameters and spacing) is probably the most efficient measure needed to enlarge the critical pressure significantly. We also introduce a dimensionless parameter, the pillar slenderness ratio, to characterize the stability of either the Cassie-Baxter or the Wenzel wetting state and show that the energy barrier for transitioning from the Cassie-Baxter to the Wenzel wetting mode is proportional to both the slenderness ratio and the area fraction. Thus, the Cassie-Baxter wetting mode may collapse under a hydraulic pressure lower than the critical one if the slenderness ratio is improperly small. This quantitative study explains fairly well some experimental observations of contact angles that can be modeled by neither Wenzel nor Cassie-Baxter contact angles and eventually leads to our proposals for a mixed (or coexisting) wetting mode.     

Luminescence centers in porous silicon

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100–150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of andX band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.     

Optical spectra of an intracavity two-photon medium with sequeezed inputs

We consider an ensemble of three-level configuration atoms in an optical cavity, interacting through two-photon transitions with a cavity mode, driven by a broad-band squeezed input of finite amplitude. The atom-cavity system is coupled to reservoirs to describe the losses of the atoms and the cavity. Optical spectra in the transmitted and the reflected field are calculated and analysed in the good cavity limit, for the purely absorptive resonant case and the general case, respectively.