应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Near-infrared emission bands of Er-doped YAP and LSO crystals

The ground state absorption (GSA), photoluminescence (PL) and photoluminescence excitation (PLE) spectra for Er(1.0 at%):YAP and Er(0.5 at%):LSO were measured at room temperature. Based on the GSA spectra, the radiative transition rates and luminescence branch ratios of erbium ions were determined by the Judd-Ofelt (J-O) method. In the range of 1400-1700 nm Er(1.0 at%):YAP has intense absorption at 1509 nm (0.96×10⁻²⁰ cm²), which is almost two times larger than the peak absorption of Er(0.5 at%):LSO. From the PL and PLE spectra, four intense emission bands around 850 nm (⁴S_3/2→⁴I_13/2), 980 nm (⁴I_11/2→⁴I_15/2), 1230 nm (⁴S_3/2→⁴I_11/2) and 1520 nm (⁴I_13/2→⁴I_15/2) were observed. The stimulated emission cross-sections of the four bands were calculated by the Fuchtbauer-Ladenberg (F-L) equation. The results suggest that Er(1.0 at%):YAP has potential to realize laser oscillation at 858 nm because of the relatively large simulated emission cross-section (1.76×10⁻²⁰ cm²). The temperature dependences of the PL spectra for the two crystals were also investigated in the range of 290-12 K. The ∼1520 nm emission presents continuous increase with temperature, while the emissions around 850, 1230 and 980 nm firstly increase with temperature, then reach their own largest values at the transition temperatures (about 100 K), and finally decrease with temperature. These results were well interpreted by the temperature dependence of multi-phonon process.     

Film thickness dependence of electro-optic effect in epitaxial BaTiO3 thin films

Based on the phenomenological Landau-Devonshire theory, we investigate the film thickness dependence of ferroelectric and electro-optic properties of epitaxial BaTiO₃ thin films grown on SrTiO₃ and MgO substrates. By using the effective substrate lattice parameter concept, the film thickness dependence of misfit strain is incorporated into the theory. Therefore, the film thickness dependence of ferroelectric and electro-optic properties in epitaxial BaTiO₃ thin films can be explained. Moreover, a large quadratic electro-optic effect was obtained in the BaTiO₃ thin films, which is in good agreement with the experimental result of BaTiO₃ thin films on the MgO substrate.     

基于均值置信区间带的高光谱特征波段选择与树种识别

以柏木、雷竹和无患子野外高光谱数据为基础,在统计学理论和实践分析的基础上,提出了利用均值置信区间带筛选树种间最佳特征区分波段及利用Manhattan距离和Min-Max区间相似度识别树种的问题。研究结果表明:(1)柏木与雷竹之间的最佳区分波段为358～386,452～1 145和1 314～2 500 nm,柏木与无患子之间的最佳区分波段为350～446,497～527,553～1 330,1 355～2 400和2 436～2 500 nm,雷竹与无患子之间的最佳区分波段为434～555,580～1 903,1 914～2 089,2 172～2 457和2 475～2 500 nm;(2)在最佳区分波段内,同种树种间的Manhattan距离远小于异种树种间的Manhattan距离,同种树种间的Min～Max区间相似度远大于异种树种间的Min～Max区间相似度,Manhattan距离和Min～Max区间相似度可以有效区分和识别不同类型的树种。     

Ku波段扩展互作用速调管设计

微波电真空器件随着频率的升高,不但聚焦系统难以实现,而且其输出增益和带宽都受到很大的限制,要解决该问题,建议采用扩展互作用速调管,采用分布作用谐振腔技术来扩展其工作带宽和提高增益。利用CST和粒子模拟(PIC)3维软件对其工作在Ku波段扩展互作用速调管进行了设计和仿真,在工作电压30 kV、束流8.5 A的条件下,聚焦系统采用幅值为0.48 T的周期反转永磁聚焦,在输入功率为5.1 W时,得到效率为23%,3 dB带宽为306 MHz,频带内最大增益为39 dB,其峰值功率为58 kW的微波输出。     

石墨烯碳纳米管复合结构渗透特性的分子动力学研究

采用经典分子动力学方法研究了压力驱动作用下水在石墨烯碳纳米管复合结构中的渗透特性.研究结果表明,水分子渗透通过石墨烯碳纳米管复合结构的渗透率明显高于石墨烯碳纳米管组合结构.水在石墨烯碳纳米管复合结构中的渗透率随着压强的升高而增大,随着电场强度的增大而减小.考虑了温度和复合结构中双碳管轴心距对水渗透性的影响规律.系统温度越高,水的渗透率越高;随着双碳管轴心距的增加,水的渗透率逐渐降低.通过计算分析水流沿渗透方向的能障分布,解释了各参数变化对水在石墨烯碳管复合结构中渗透特性的影响机理.研究结果将为基于石墨烯碳管复合结构的新型纳米水泵设计提供一定的理论依据.     

抗磁悬浮振动能量采集器动力学响应的仿真分析

分析了微型抗磁悬浮振动能量采集器中悬浮磁体的受力特性,发现了能量采集器的单稳态和双稳态现象,研究了能量采集器在不同工作状态下该两种稳态类型时的动力学响应特性.当能量采集器处于非工作的单稳态状态时,其动力学响应是在线性系统的基础上加入非线性扰动、幅频响应曲线向右偏转;热解石墨板间距越大,非线性扰动越强烈,右偏现象则越显著.当能量采集器处于非工作的双稳态状态时,其动力学响应比较复杂,出现倍周期、4倍周期以及混沌等非线性系统特有的现象.当能量采集器处于工作状态的双稳态状态时,其振动频率和外界激励频率保持一致,进行周期振动.该研究对抗磁悬浮振动能量采集器的结构设计具有重要的参考价值,为提高能量采集器的响应特性和输出性能提供了理论指导.     

斯特林用直线压缩机的研究

斯特林直线压缩机的性能决定了斯特林制冷机的性能和寿命,阐述了动圈式和动磁式斯特林用直线压缩机的发展及结构特点,并介绍了斯特林直线压缩机的设计计算模型,给出了电机效率与动子质量和角频率的关系,这是斯特林直线压缩机设计的重要控制指标。     

Influence of the stress on magnetoelectric effect in magnetostrictive-PZT bilayers

In this letter, we investigate the influence of the stress on magnetoelectric (ME) effect in a magnetostrictive-PZT bilayer. ME voltage coefficient α*_E = δE / δH, where δE is the induced electric field for an applied alternating current (ac) magnetic field δH, is obtained by solving the stress-related piezoelectric constitutive equation and the conventional magnetostrictive equation with appropriate boundary condition. Based on the free-energy density function of the PZT film in stress state, we get the stress-related piezoelectric charge coefficient ^p d*₃₁ and dielectric permittivity ^pε*₃₃. After taking the cobalt ferrite (CFO) as magnetostrictive phase, it is found that α*_E increases with decreasing 2-d compressive stress for CFO-PZT, which not only is qualitatively consistent with previous experimental measurements, but also provides a possible route to improve the ME effect.      

Beam-helicity asymmetry in photon and pion electroproduction in the Δ(1232)-resonance region at Q2 = 0.35(GeV/c)2

The beam-helicity asymmetry has been measured simultaneously for the reactions p→epγ and p→epπ ⁰ in the Δ(1232)-resonance region at Q ² = 0.35(GeV/c)². The experiment was performed at MAMI with a longitudinally polarized beam and an out-of-plane detection of the proton. The results are compared with calculations based on dispersion relations for virtual Compton scattering and with the MAID model for pion electroproduction. There is an overall good agreement between experiment and theoretical calculations. The remaining discrepancies may be ascribed to an imperfect parametrization of some γ ^(*) N→πN multipoles, mainly contributing to the non-resonant background. The beam-helicity asymmetry in both channels (γ and π ⁰) shows a good sensitivity to these multipoles and should allow future improvement in their parametrization.