基于物理光学法的建筑物内高功率微波耦合场分布计算

利用物理光学法计算了高功率微波在建筑物内的耦合场分布。根据建筑物墙壁和窗户的透射率可以得到墙壁内侧的透射场,将它代入到矢量衍射公式中直接计算出在整个建筑物内的透射场;根据建筑物地面的反射率得到地板表面的反射场,将它代入到矢量衍射公式中可计算出整个建筑物内的反射场;对透射场与反射场进行矢量相加,得到叠加场。将本文方法得到的场分布情况和时域有限差分法得到的场分布进行比较,二者结果一致。物理光学法的优点在于其物理图像清晰,计算量小,计算速度快,适合应用在大型建筑物内部耦合场分布计算上。     

Structures,stabilities and adsorption mechanisms of nitrogen adsorbed on Mon (n = 1–8) clusters

Configurations, stabilities and adsorption mechanisms of ground-state Mo_nN and Mo_nN₂ (n?=?1–8) clusters are calculated by using the density functional method within the PBE level. Evidently, N atoms tend to approach more Mo atoms. Doping with two N impurity prefers to occupy symmetrical position of the host Mo_n (n?=?1–8) cluster except for Mo₂N₂ clusters. Mo₄N, Mo₆N, Mo₂N₂, Mo₄N₂ and Mo₆N₂ clusters have higher structural stabilities than their neighbors by the second derivative of total binding energy. Mo₂N, Mo₄N and Mo₇N, Mo₂N₂, Mo₅N₂ and Mo₇N₂ clusters have higher kinetic reactivity than their neighbors by the HOMO–LUMO gaps. The adsorption capacity of a N atom to Mo₄ cluster is stronger than the other Mo–N clusters.     

Global Error Bound for the Generalized Linear Complementarity Problem over a Polyhedral Cone

In this paper, the global error bound estimation for the generalized linear complementarity problem over a polyhedral cone (GLCP) is considered. To obtain a global error bound for the GLCP, we first develop some equivalent reformulations of the problem under milder conditions and then characterize the solution set of the GLCP. Based on this, an easily computable global error bound for the GLCP is established. The results obtained in this paper can be taken as an extension of the existing global error bound for the classical linear complementarity problems. This work was supported by the Research Grant Council of Hong Kong, a Chair Professor Fund of The Hong Kong Polytechnic University, the Natural Science Foundation of China (Grant No. 10771120) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry.     

Auxiliary Principle and Iterative Algorithms for Lions-Stampacchia Variational Inequalities

In this paper, we extend the auxiliary principle (Cohen in J. Optim. Theory Appl. 49:325–333, 1988) to study a class of Lions-Stampacchia variational inequalities in Hilbert spaces. Our method consists in approximating, in the subproblems, the nonsmooth convex function by a sequence of piecewise linear and convex functions, as in the bundle method for nonsmooth optimization. This makes the subproblems more tractable. We show the existence of a solution for this Lions-Stampacchia variational inequality and explain how to build a new iterative scheme and a new stopping criterion. This iterative scheme and criterion are different from those commonly used in the special case of nonsmooth optimization. We study also the convergence of iterative sequences generated by the algorithm. This work was supported by the National Natural Science Foundation of China (10671135), the Specialized Research Fund for the Doctoral Program of Higher Education (20060610005), the National Natural Science Foundation of Sichuan Education Department of China (07ZB068) and the Open Fund (PLN0703) of State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation (Southwest Petroleum University).     

Simultaneous wavelength tuning and amplitude modulation in QPM optical parametric amplifiers

We repot simultaneous optical parametric amplifiers (OPA) and amplitude modulation of signal pulse in a monolithic periodically poled KTP (PPKTP) by electrically controlling the relative phase between the pump, signal and idler waves in a KTP dispersion section sandwiched between two PPKTP gratings, theoretically. The controlling electric field can be arbitrary direction. For an ultrashort pulse group velocity mismatch, group dispersion and diffraction must be regarded, simultaneously. The solutions of the truncated equations, including the above effects in the two PPKTP gratings of simultaneous frequency tuning and amplitude modulation OPA, were analyzed. It is shown that the intensity of output signal pulse of OPA depends on the thickness of the dispersion section, the magnitude and azimuth of controlling electric field and one evidences periodicity. For the certain angular dispersion there exist the largest frequency bandwidths of optical parametric amplifiers. Certain angular dispersion of a signal pulse can increase the frequency bandwidth, and broadband amplification of ultrashort pulse can be performed effectively.     

Quantization of spin direction for solitary waves in a uniform magnetic field

It is known that there are nonlinear wave equations with localized solitary wave solutions. Some of these solitary waves are stable (with respect to a small perturbation of initial data) and have nonzero spin (nonzero intrinsic angular momentum in the center of momentum frame). In this paper we consider vector-valued solitary wave solutions to a nonlinear Klein-Gordon equation and investigate the behavior of these spinning solitary waves under the influence of an externally imposed uniform magnetic field. We find that the only stationary spinning solitary wave solutions have spin parallel or anti-parallel to the magnetic field direction.     

Structural characterization of β-V2O5 films prepared by DC reactive magnetron sputtering

β-V₂O₅ films were successfully prepared on silicon substrates by direct current (DC) reactive magnetron sputtering. X-ray diffraction (XRD), Raman spectra and field emission scan electron spectroscopy (SEM) were used to characterize the samples. Results revealed that the deposition temperature significantly influenced on the crystal structure of V₂O₅ films in the growth process. When the deposition temperature was below 500 °C, the sputtered film exhibited the α-V₂O₅ structure. However, β-V₂O₅ film was successfully obtained at 550 °C. High deposition temperature might provide V and O ions high mobility and energy in the reactive sputtering process, which induced the metastable β-V₂O₅ phase formed. The thermal stability of β-V₂O₅ film was studied by micro-Raman spectroscopy. The structure of sputtered β-V₂O₅ film was unstable under high temperature conditions (beyond 500 °C).     

Unbounded Components in the Solution Sets of Strictly Quasiconcave Vector Maximization Problems

Let (P) denote the vector maximization problem

Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model

In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga_1-xIn_xSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga_1-xIn_xSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga_1-xIn_xSb layer and the alloy composition in Ga_1-xIn_xSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.     

All-solid-state CW frequency-doubling Nd:LuVO<Subscript>4</Subscript>/KTP laser with 2.3 W output power at 545 nm

Efficient and compact green-yellow laser output at 545 nm is generated by intracavity frequency doubling of a continuous-wave (CW) diode-pumped Nd:LuVO₄ laser at 1089 nm under the condition of suppressing the higher gain transition near 1066 nm. With 18.7 W of diode pump power and the frequency-doubling crystal KTiOPO₄(KTP), as high as 2.3 W of CW output power at 545 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 12.3%; the output power stability over 4 h is better than 5.4%.