Experimental search for gamma-ray bursts from evaporating primordial black holes

The energy spectra and temporal characteristics of high-energy gamma-ray bursts from evaporating primordial black holes have been calculated using various evaporation models. The currently existing theoretical uncertainties in the shape of the evaporated photon spectrum are discussed. The data from the Andyrchy and Carpet-2 arrays of the Baksan Neutrino Observatory (Institute for Nuclear Research, Russian Academy of Sciences) obtained in the mode of detection of a single cosmic-ray component are used to search for cosmic gamma-ray bursts with a primary photon energy of about 8 GeV. New upper limits have been obtained for the number density of evaporating black holes in a local region of space with a characteristic size of ～10^?3 pc for various evaporation models.     

AgGaS2- and Al-doped GaSe Crystals for IR Applications

We report a systematic study of AgGaS₂- and Al-doped GaSe crystals in comparison with pure GaSe and S-doped GaSe crystals. AgGaS₂-doped GaSe (GaSe:AgGaS₂) crystal was grown by Bridgman technique from the melt of GaSe:AgGaS₂ (10.6 wt.%). Its real composition was identified as GaSe:S (2 wt.%). Al-doped GaSe (GaSe:Al) crystals were grown from the melt of GaSe and 0.01, 0.05, 0.1, 0.5, 1, 2 mass % of aluminium. Al content in the grown crystals is too small to be measured. The hardness of GaSe:S (2 wt.%) crystal grown from the melt of GaSe:AgGaS₂ is 25% higher than that of GaSe:S (2 wt.%) crystal grown by a conventional S-doping technique and 1.5- to 1.9-times higher than that of pure GaSe. GaSe:Al crystals are characterized by 2.5- to 3-times higher hardness than that of pure GaSe and by extremely low conductivity of ≤ 10^− 7 Om^− 1 cm^− 1. A comparative experiment on SHG in AgGaS₂-, Al-, S-doped GaSe and pure GaSe is carried out under the pumps of 2.12-2.9 μm fs OPA and 9.2−10.8 μm ns CO₂ laser. It was found that GaSe:S crystals possess the best physical properties for mid-IR applications among these doped GaSe crystals. GaSe:Al crystals have relatively low conductivity which have strong potential for THz application.     

Electronic excitation energy transfer between dye molecules in H<Subscript>2</Subscript>O and D<Subscript>2</Subscript>O solutions in the micellar phase

Processes of electronic excitation energy transfer (EEET) in H₂O+D₂O solutions within reversed micelles with different degrees of hydration were studied. It is ascertained that the structure of solutions forms a cluster distribution of interacting molecules having a fractal dimensionality. As a result, in regions with a locally high concentration of the dye molecules, an increase in the EEET efficiency is observed. Solubilization by reversed micelles leads to destruction of the cluster structure of the water system, with the dependence of the EEET efficiency on the degree of hydration being nonmonotonic. As the degree of hydration increases, the inhomogeneities of the structure inherent in bulk water are restored.     

Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters

A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer contact. Owing to blackening, the reflection coefficient has been decreased more than tenfold.     

Linear and quadratic magneto-optical effects observed in La0.7Sr0.3MnO3 thin films in transmitted light

Magnetic linear dichroism (MLD) is observed in polycrystalline La_0.7Sr_0.3MnO₃ films in transmitted light. The spectral and temperature dependences of the MLD are determined for the energy E of the light wave ranging from 1.5 to 3.5 eV. The experimental spectra are fitted by a sum of Lorentzian curves. The MLD spectrum exhibits more features in comparison to the spectra of magnetic circular dichroism (MCD), which we measured earlier using the same film samples. Various temperature behaviors of the intensities of the Lorentzian components centered at different E values have been revealed. This can be related to the effect of the surface states on the magneto-optical characteristics of the samples.     

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure

Technical Physics - The influence of low-temperature passivating GaN cap layers on the electrophysical parameters of a 2D electron gas (2DEG) in heterostructure high-electron mobility transistors...     

The thermodynamic functions and the regions of (P,T)-states of dense carbon and boron nitride modifications

Abstract

For the first time the thermodynamic functions for boron nitride and carbon were defined in the temperature range 300 to 4000K by a computational procedure which was impossible in the previous empirical approach. This involved the application of the theoretical functions from Refs. 1, 2, and 3. There the temperature dependence of the heat capacity is characterized by a sum of two Debye functions that reflect the contribution of vibration modes of different characteristic temperature to the heat capacity. The above-mentioned theoretical functions make it possible to calculate the thermodynamic function without allowing for the anharmonic effect in the temperature range rather wider th-an the one wherein the initial experiments were conducted. It is sufficient for their computation to define Debye characteristic temperatures. One of the procedures of their calculation using experimental enthalpy data is described in Ref. 4. Besides, this work contains the majority of known experimental and theoretical data which enable various methods of the thermodynamic function characterizations for carbon and boron nitride to be compared.     

Thermodynamics of elastic strength of the metal surface layer

This paper presents a physicochemical model that establishes a connection between the elastic strength of the surface layer (SL) of metal and its surface Gibbs energy. The elastic limit of SL along the low-index face of the metal single crystal under stress during the transition from elastic to plastic deformation was calculated. Calculation shows that the elastic limit of metal SL with fcc and bcc structures is approximately three orders of magnitude higher than the yield strength of these metals in bulk and close to nanohardness of the metals, in particular; for Cu(111) и Al(111), it is 5.3 and 2.8?GPa, respectively. In the light of the proposed model, the effect of lowering the elastic strength of metal SL due to adsorption of surfactant is formulated.