Rotational bands in 181Ta

High-spin states in ¹⁸¹Ta have been studied via the ¹⁷⁶Yb(¹¹B,α2n) reaction at 52 MeV using the PEX array and at 57 MeV using the NORDBALL array, with α-particle detection. The previously known, K^π=(7/2)⁺ ground state band and K^π=(9/2)⁻ band have been extended to spins (29/2)⁺ and (31/2)⁻, respectively. Two new one-quasiparticle bands, the K^π=(5/2)⁺ band built on the known (5/2)⁺ isomer and a K^π=((1/2)⁻) band have been observed. Two other rotational bands with three-quasiparticle structure, K^π=(15/2)⁻ and ((19/2)⁺ with π(7/2)[404]ν²(1/2)[510](9/2)[624] and π(9/2)[514]ν²(1/2)[510](9/2)[624] configurations, respectively, have been newly observed. The half-life of the K^π=((19/2)⁺) bandhead which decays to the head of the (15/2)⁻ band has been measured to be 140(36) ns. However, transitions from the ((19/2)⁺) state to the (15/2)⁻ band have not been observed. Received: 26 August 1998     

Computational experience with general equilibrium problems

We report on computational experience with an implementation of three algorithms for the general economic equilibrium problem. As a result we get that the projection algorithm for variational inequalities increases the size of solvable models by a factor of 5–10 in comparison with the classical homotopy method. As a third approach we implemented a simulated annealing heuristic which might be suitable to estimate equilibria for very large models.Supported by the German Research Association (Deutsche Forschungsgemeinschaft, SFB 303).     

Size dependence of self-diffusion in the hard-square lattice gas

A striking size dependence of the mean-square displacement of diffusing particles in the two-dimensional lattice gas of hard squares has been observed by Monte Carlo simulation. It is shown that the size effect is due to the formation of a stable cage structure in small lattices when the particle concentration is high. The formation of cages is governed by a new type of percolation problem related to bootstrap percolation.     

The Random Average Process and Random Walk in a Space-Time Random Environment in One Dimension

We study space-time fluctuations around a characteristic line for a one-dimensional interacting system known as the random average process. The state of this system is a real-valued function on the integers. New values of the function are created by averaging previous values with random weights. The fluctuations analyzed occur on the scale n ^1/4, where n is the ratio of macroscopic and microscopic scales in the system. The limits of the fluctuations are described by a family of Gaussian processes. In cases of known product-form invariant distributions, this limit is a two-parameter process whose time marginals are fractional Brownian motions with Hurst parameter 1/4. Along the way we study the limits of quenched mean processes for a random walk in a space-time random environment. These limits also happen at scale n ^1/4 and are described by certain Gaussian processes that we identify. In particular, when we look at a backward quenched mean process, the limit process is the solution of a stochastic heat equation.     

In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputtering

Superconducting films of Bi-Sr-Ca-Cu-O on (100) MgO substrates have been fabricated by XeCl-excimer-laser sputtering from ceramic targets of Bi_2.5Sr₂Ca₂Cu₃O_y in O₂ atmosphere. The films were polycrystalline with the c-axis (30.80±0.02Å) preferably oriented normal to the substrate surface. Without post-annealing the films showed metallic resistance behavior with zero resistance temperatures of up to T_c(0) }- 79 K. The critical current density of the films had values of up to j_c(50K)}- 10⁴ A/cm².     

Cylindrical spike model for the formation of diamondlike thin films by ion deposition

T /n_S of n_T rearrangements and n_S atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. n_T/n_S>1 is the optimum condition for diamondlike film growth. For aC films the ion energy dependence of n_T/n_S agrees well with the measured sp³ bond fraction. For Ar⁺-ion-assisted deposition of aC we find n_T/n_S>1 above 50 eV with no pronounced ion energy dependence. Furthermore, our model predicts optimum conditions for the formation of cubic boron nitride between 50 eV and 3 keV. Accepted: 14 October 1997     

On the congruence lattice of a Scott-domain

We prove that the congruence lattice of a Scott-domain can be characterized as a complete lattice.Presented by V. Trnkova.The research of the first author was supported by the NSERC of Canada.The research of the second author was supported by the Hungarian National Foundation for Scientific Research, under Grant No. 1903.