Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra. Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001     

开设实验选修课培养学生创新能力

介绍了复旦大学物理教学实验中心为培养学生创新能力开设的4门实验选修课的特点、要求以及在培养学生创新能力方面取得的成效。     

Generic replica symmetric field-theory for short range Ising spin glasses

Symmetry considerations and a direct, Hubbard-Stratonovich type, derivation are used to construct a replica field-theory relevant to the study of the spin glass transition of short range models in a magnetic field. A mean-field treatment reveals that two different types of transitions exist, whenever the replica number n is kept larger than zero. The Sherrington-Kirkpatrick critical point in zero magnetic field between the paramagnet and replica magnet (a replica symmetric phase with a nonzero spin glass order parameter) separates from the de Almeida-Thouless line, along which replica symmetry breaking occurs. We argue that for studying the de Almeida-Thouless transition around the upper critical dimension d = 6, it is necessary to use the generic cubic model with all the three bare masses and eight cubic couplings. The critical role n may play is also emphasized. To make perturbative calculations feasible, a new representation of the cubic interaction is introduced. To illustrate the method, we compute the masses in one-loop order. Some technical details and a list of vertex rules are presented to help future renormalisation-group calculations. Received 9 October 2001     

高聚物与光场相互作用的微观机制

分析光场与高聚物相互作用的微观机制，介绍高分子与小分子在光场作用下的极化过程。对在窄束光场作用下，高分子链极化后链上各处极化程度的分布情况进行研究，指出对于高度拉伸的聚合物薄膜，电偶极子模型不适合准确解释高分子与光场相互作用的微观机制。为此，采用符合实际的天线模型分析高分子天线与窄束光场的相互作用，从理论上推导出天线模型高分子链上一小段的极化公式，并用离散变分方法——DVM（discrete variational method）计算一个高分子链的极化分布，验证了文中推导出的分式的合理性。最后，将极化分布看作是电流在天线上的分布，计算了天线的次级辐射在空间中的角分布，得到天线模型对电偶极子模型的修正因子。     

Some remarks to multivariate regression model

Some remarks to problems of point and interval estimation, testing and problems of outliers are presented in the case of multivariate regression model. This work was supported by the Council of Czech Government J14/98:153100011.     

非负定阵元素的扰动和正定完备化

在保持非负定性不变的前提下,本文对矩阵每一元素容许多大的扰动作了进一步的研究, 将本文的结论和C．R．Johnson提出的部分正定阵的正定完备化进行比较,容易发现对已知的正定矩阵求扰动,本文的结论比用C．R.Johnson的正定完备化计算扰动形式上更简单,同时也给出了不同于C．R．Johnson的部分正定阵的正定完备化表示的另外一个公式,推出了这些正定完备化矩阵应具有的若干性质．     

图有分数因子的度条件

本文研究了图有分数因子的度条件,得到了下面的结果：令k(?)1是一个整数,G是一个连通的n阶图,n(?)4k-3且最小度δ(G)(?)k,若对于每一对不相邻的顶点u,v∈V(G)都有max{d_G(u),d_G(v)}(?)n/2,则G有分数k-因子．并指出该结果在一定意义上是最好可能的。     

Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures

We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study the Gibbsian character of the measure νS(t) at time t and show the following: (1) For all ν and μ, νS(t) is Gibbs for small t. (2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0. (3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t. (4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t. The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios. Received: 26 April 2001 / Accepted: 10 October 2001     

系数变号的半线性椭圆方程的正解

本文研究半线性椭圆方程Dirichlet问题-△u=α（x）f(u），x∈Ω， u（x）=0，x∈ЭΩ，正解的存在性，其中Ω为R^n中有界的带光滑边界的区域，α(x)可以变号。     

一类潜热型功能液固两相流体的定压比热研究

应用两相流与热物理理论，严格推导出一类潜热型功能液固两相流体的定压比热计算公式．