Investigation of the possibility of obtaining homogeneous Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>x</Subscript>Sb crystals under weak flow conditions

The possibility of growing macrohomogeneous Ga_{1 ? x}In_xSb crystals with x = 0.2 was studied using the axial heating process close to the melt/crystal interface. The grown ingots were analyzed by a JSM-5300 scanning electron microscope and the experimental results were compared with the results of numerical simulation. It was shown that, as a whole, the mathematical model adequately describes the processes of the steady-state heat and mass transfer. It was found that, at the crystallization of Ga_{1 ? x}In_xSb by the axial heating process under conditions of weak laminar flows, longitudinal homogeneity is observed when a dead zone is formed in the melt and that the crystallization regime is similar to diffusion. It was shown that the composition of the grown crystals strongly depends on the structure of a melt flow and its dynamics.