辐射成像系统模拟软件NUCRPD的研发与应用

在辐射成像系统的设计研发中,经常需要计算系统的各项物理性能指标。为了提升产品研发的效率,同方威视联合清华大学,基于蒙特卡罗程序包Geant4,研发了国内首套具有自主知识产权的辐射成像系统模拟软件NucRPD(NUCTECH Radiography Performance Design Tools),其能够快速、精确地模拟系统的各项性能指标。该软件对常用的一些辐射成像系统进行了参数化建模,用户通过修改软件界面上的少量参数,就可以快速建立各类辐射成像系统的几何体、源项、物理模型和统计量,然后在服务器上以并行计算方式完成模拟计算,能在较短的时间内模拟出系统的性能指标,并给出直观的图形帮助用户深入理解模拟结果。NucRPD的模拟结果经过了大量的实验验证,其剂量场分布和物理指标等模拟结果和实验结果符合得很好。NucRPD已经应用于同方威视辐射成像系统产品的设计研发,在产品的物理指标优化和辐射防护优化中发挥了重要作用。     

氮化镓基感光栅极高电子迁移率晶体管器件设计与制备

GaN基高电子迁移率晶体管(HEMT)作为栅控器件,具有AlGaN/GaN异质结处高浓度的二维电子气(2DEG)及对表面态敏感等特性,在栅位置处与感光功能薄膜的结合是光探测器领域重要的研究方向之一.本文首先提出在GaN基HEMT栅电极上引入光敏材料锆钛酸铅(PZT),将具有光伏效应的铁电薄膜PZT与HEMT栅极结合,提出一种新的"金属/铁电薄膜/金属/半导体(M/F/M/S)"结构;然后在以蓝宝石为衬底的AlGaN/GaN外延片上制备感光栅极HEMT器件.最后,通过PZT的光伏效应来调控沟道中的载流子浓度和通过源漏电流的变化来实现对可见光和紫外光的探测.在365 nm紫外光和普通可见光条件下,对比测试有/无感光栅极的HEMT器件,在较小V_(gs)电压时,可见光下测得前者较后者的饱和漏源电流I_(ds)的增幅不下降,紫外光下前者较后者的I_(ds)增幅大5.2 mA,由此可知,感光栅PZT在可见光及紫外光下可作用于栅极GaN基HEMT器件并可调控沟道电流.     

关于93Mo中21/2+晕阱的来源(英文)

本研究通过壳模型计算研究了N=51的同中子素91Zr、93Mo和95Ru中高自旋晕态21/2+的同核异能态现象。计算发现,低角动量的p_1/2轨道上的质子是仅在93Mo中存在21/2+晕阱的主要原因。同时,本工作还研究了N=52的同中子素92Zr、94Mo和96Ru中10₁+-12₁+能级结构的系统性,发现94Mo中的10₁+-12₁+能级间隙相对最小,考虑到与93Mo的17/2₁+-21/2₁+能级相似的组态,这一结果为93Mo中出现21/2+晕阱提供了补充性的论证。Isomerism of the high-spin yrast 21/2+ states of the N=51 isotones 91Zr, 93Mo and 95Ru has been investigated using the shell model calculations. It is found that the low-j πp_1/2 is responsible for the only yrast trap in 93Mo. In addition, the relatively smaller 10₁+-12₁+ level spacing in 94Mo has been found by investigating the systematics of the 10₁+-12₁+ level structures in the N=52 isotones 92Zr, 94Mo and 96Ru. This result provides a supplementary argument to the origin of the 21/2+ yrast trap in 93Mo from the viewpoint of the similarity between the configurations of 10₁+-12₁+ states in 94Mo and those of 17/2₁+-21/2₁+ states in 93Mo.     

电子直线加速器束流均方根发射度变化方程

本文导出了考虑外场和束流效应后束流均方根发射度平方变化方程的一般表达式,并就仅考虑外场,仅考虑空间电荷场和仅考虑尾场等三种特殊情况进行了分析。     

Measurements of the perpendicular width of ionization-produceddouble layers

Measurements of the perpendicular (to B) double-layer widths of ionization-produced (anode) double layers are presented. These widths were determined from measurements of the double-layer charge separations. The variations of the transverse-to-B widths with plasma density and magnetic field strength are given     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

混合流体浸润相变的研究(Ⅳ)——二元系统浸润相变的临界特性

本文研究了二元Sullivan流体在二相共存、三相共存时的临界指数。发现所得临界指数并不依赖于模型参量和动力学势的对称性,具有普适性,同时,这一组临界指数满足标度律。     

三种胺羧配合物的113Cd NMR研究

该文对Cd-HEDTA(N-(2-羟基乙基)乙二胺-N',N',N'-三乙酸),Cd-PDTA(1,2丙二胺四乙酸)和Cd-DTPA(二乙三胺五乙酸)的¹¹³Cd NMR谱和自旋晶格弛豫时间T₁,及NOE因子进行了研究.结果表明,Cd-HEDTA和Cd-PDTA结构与Cd-EDTA类似,Cd-PDTA双线归因于其可能的两种异构体.Cd-DTPA大的化学位移表明其具有七配位的五角双锥结构.在这种结构中DTPA可用三个氮原子参加配位.对¹¹³Cd自旋晶格弛豫时间分析表明,Cd-DTPA配合物中质子偶极作用机理的贡献较大,这归因于Cd DTPA有更多的乙酸根亚甲基质子参与偶极作用.     

Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.