Untersuchung von Fetten, ?len und ?lhaltigen Produkten

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Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Influence of both substrate temperature, T_s, and annealing temperature, T_a, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (T_s = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (T_a = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a₀, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the T_s and T_a of the films. Observed decrease in the film resistivity with T_a is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.     

The equivalent vector boson approximation for intermediate mass Higgs boson production

We consider the equivalent vector boson approximation (EVBA) for the processqq→qqWW→qqH andqq→qqZZ→qqH. It is shown that the contributions σT and σL, of the transversely and longitudinally polarized vector bosonsV respectively, are comparable with each other for intermediate values ofm _H viz. 0.3 TeV to 0.6 TeV. σT can be as large as 1.5–2 times σL in this mass range. As a result the leading EVBA for σ=σL+σT overestimates the exact total cross-section by a factor, upto 2–3 even, at high energies. σT is negligible with respect to the leading contribution σL only form _H≧0.6 TeV, where EVBA is correct within 15–20%. Further the effect of the corrections to EVBA, which are naively of nonleading order, on these conclusions in the framework of the EVBA is discussed.     

A nonperturbative component in muoproduction of charm

A nonperturbative C component in the quark fragmentation function, as suggested by the neutrino-induced like-sign dimuon data, contributes appreciably to muoproduction of charm. It is comparable in size to the perturbative QCD (photon-gluon fusion) contribution; and its inclusion gives a better fit to the charm muoproduction (muon-induced dimuon) data.     

Omnibus Sequences, Coupon Collection, and Missing Word Counts

In this paper, we study the properties of k-omnisequences of length n, defined to be strings of length n that contain all strings of smaller length k embedded as (not necessarily contiguous) subsequences. We start by proving an elementary result that relates our problem to the classical coupon collector problem. After a short survey of relevant results in coupon collection, we focus our attention on the number M of strings (or words) of length k that are not found as subsequences of an n string, showing that there is a gap between the probability threshold for the emergence of an omnisequence and the zero-infinity threshold for ${\mathbb E}(M)$ .     

Reductive deoxygenation of ortho-hydroxyaromatic aldehydes to 1,2-bis(hydroxyaryl)ethanes: application to the synthesis of ethylene bridged calixarene-analogous metacyclophanes

A novel and convenient protocol for the synthesis of hexahydroxy[2.1.2.1.2.1]- and octahydroxy[2.1.2.1.2.1.2.1]metacyclophanes from 4-substituted phenol in four steps has been developed. The synthetic route involved the preparation of the key intermediate 1,2-bis(5-substituted-2-hydroxyphenyl)ethanes in good yields via (i) formylation of 4-substituted phenol, (ii) reductive deoxygenation of 5-substituted 2-hydroxy aromatic aldehydes with low-valent titanium reagent and (iii) catalytic hydrogenation. The metacyclophanes were prepared by base-catalyzed macrocyclization of the above intermediates with formaldehyde in refluxing xylene in high yields.     

Spectroscopic investigation on europium complexation with humic acid and its model compounds

Time resolved fluorescence spectroscopy (TRFS) of Eu(III) (an analogue of trivalent actinides) complexation with humic acid (HA) and its model compounds, namely phthalic acid (PA), mandelic acid (MA) and succinic acid (SA) has been carried out at varying concentration ratios of ligand to metal ion. The emission spectra were recorded in the range of 550–650 nm by exciting at an appropriate wavelength. The intensity of the 616 nm peak of Eu(III) was found to be sensitive to complexation. The ratio of the intensities of 616 and 592 nm peaks was used to determine the stability constants of Eu-phthalate, Eu-mandelate and Eu-succinate complexes. In the case of model compounds, the life-time was found to increase with increasing ligand to metal ratio (L/M) indicating the decrease in quenching of the fluorescence by coordinated water molecules with increasing complexation. On the other hand in the case of HA, the life-time was found to be constant at least up to L/M of 5, indicating the formation of outer sphere complex. Beyond L/M = 5 the life-time value was found to increase which can be attributed to the binding of the metal ion to the higher affinity sites in the HA macromolecule.     

Role of Ti in the luminescence process of Al2O3:Si,Ti

Al₂O₃:Si,Ti, prepared under oxidizing condition at high temperature, gives PL emission around 430 nm when excited with 240 nm. The Al₂O₃:C, TL/OSL phosphor, also shows emission around 430 nm, which corresponds to characteristic emission of F-center. Thus, to identify the exact nature of luminescent center in Al₂O₃:Si,Ti, fluorescence lifetime measurement studies were carried out along with the PL,TL and OSL studies. The PL and TL in Al₂O₃:Si,Ti show emission around 430 nm and the time-resolved fluorescence studies show lifetime of about 43 μs for the 430 nm emission, which is much smaller than the reported lifetime of ∼35 ms for the 430 nm emission (F-center emission) in Al₂O₃:C phosphor. Therefore, the emission observed in Al₂O₃:Si,Ti phosphor was assigned to Ti⁴⁺ charge transfer transition. Fluorescence studies of Al₂O₃:Si,Ti do not show any traces of F and F⁺ centers. Also, Ti⁴⁺ does not show any change in the charge state after gamma-irradiation. On the basis of the above studies, a mechanism for TSL/OSL process in Al₂O₃:Si,Ti is proposed.