Room temperature diluted magnetic semiconductor synthesized by dual beam laser deposition

Diluted magnetic semiconductor Co-doped ZnO film has been synthesized by a dual beam pulsed laser deposition method. The magnetic, electrical, and optical properties of the Zn_0.985Co_0.015O_0.67 film are studied in this paper. The film shows ferromagnetic behavior with a coercivity of about 300 Oe at room temperature, and semiconductor behavior with carrier concentration of 2.2×10¹⁸ cm^-3, and a resistivity of 102 mcm. Structural investigations indicated that the film has similar lattice constants to that of ZnO. It is shown that the film exhibits excellent optical properties with a band gap energy of 3.31 eV, which is close to that of ZnO. The origins of the magnetism are also discussed. PACS 81.15.Fg; 75.50 Pp; 61.72.Vv     

Microstructure effect on microtopography of chemically etched α + β Ti alloys

Microstructure effect on chemical etching behavior of the annealed Ti-6Al-4V and Ti-3Al-2.5V titanium (Ti) alloys was compared with that of unalloyed commercially pure titanium. The microstructural evolution of structure phases after annealing the titanium and its alloys at temperature near and above β transus and followed by furnace cooling to room temperature was studied using optical microscope, scanning electron microscope and X-ray diffraction techniques. The microstructure study illustrates that the heat treatment enhanced partitioning effect allows extensive formation of hemispherical and near spherical pits roughened surface to be readily acquired by chemically etching the annealed α + β titanium alloys. The kinetics of the chemical etching reaction process show a linear dependence on time. The annealed α + β titanium alloys that exhibit relatively lower weight loss and thickness reduction rate illustrate less chemical activity than the annealed unalloyed titanium.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Laser writing techniques for photomask fabrication using a femtosecond laser

Photomasks are the backbone of microfabrication industries. Currently they are fabricated by a lithographic process, which is very expensive and time consuming since it is a multi-step process. These issues can be addressed by fabricating photomasks by direct femtosecond laser writing, which is a single-step process and comparatively cheaper and faster than lithography. In this paper we discuss our investigations on the effect of two types of laser writing techniques, namely front- and rear-side laser writing, with regard to the feature size and the edge quality of a feature. It is proved conclusively that for the patterning of masks, front-side laser writing is a better technique than rear-side laser writing with regard to smaller feature size and better edge quality. Moreover the energy required for front-side laser writing is considerably lower than that for rear-side laser writing. Received: 22 May 2001 / Accepted: 14 September 2001 / Published online: 17 October 2001     

Laser induced copper electroless plating on polyimide with Q-switch Nd:YAG laser

The results of laser induced deposition of copper on polyimide substrate from copper electrolyte solution are reported. Unlike most work reported in the literatures where CW Ar⁺ lasers were used, a second harmonic (532 nm wavelength) Q-switch Nd:YAG laser was used for our experiments. The deposition process was conducted by laser-catalyzing of the polyimide surface and subsequent photothermal-accelerated reduction of copper-complex ions in an alkaline reducing environment. The characteristics of the deposited copper line were investigated in terms of laser beam scanning speed, and the number of scans. The surface morphology and chemical composition of the deposited copper were analyzed using field emission scanning electron microscope (FESEM) and energy dispersive spectrometer (EDX). The optimum processing conditions have been identified. The copper deposit was found to adhere well to the substrate.     

Microstructural and mechanical analysis of Cu and Au interconnect on various bond pads

Effects of High Temperature Storage (HTS) and bonding toward microstructure change of intermetallic compound (IMC) at the wire bonding interface of 3 types of bond pad (Al, AlSiCu and NiPdAu) were presented in this paper. Optical and electron microscope analyses revealed that the IMC growth rate of samples under 175 and 200 °C HTS increased in the order of Al > AlSiCu > NiPdAu. Besides, higher HTS and bonding temperatures also promoted higher IMC thickness. The compositional study showed that higher HTS and bonding temperature developed rapid interdiffusion in bonding interface. In the mechanical ball shear test, a decrease of the shear force of Al and AlSiCu bond pads after 500 h HTS was believed due to poorly developed IMC at bonding interface. On the other hand, shear force degradation at 1000 h was due to excessive growth of IMC that in turn causes the formation of defects. For NiPdAu bond pad, increasing trend of shear force with HTS duration at 175 °C implied a good reliability of the Cu wire bonding. The rapid microscopic inspection on Cu wired Al bond pad under HTS 175 °C showed the IMC development from the periphery to the center of the ball bond. However, after 500 h voids started to develop until the crack was observed at 1000 h.     

Synthesis and characterization of chemically anchored adenosine with PHEMA grafted gold nanoparticles

The synthesis of chemically anchored adenosine with biocompatible poly(2-hydroxylethyl methacrylate) grafted gold nanoparticles (Ado-i-PHEMA-g-AuNPs) was realized by employing a simple strategy. Disulfide-containing poly(2-hydroxylethyl methacrylate) (DT-PHEMA) was initially synthesized by atom transfer radical polymerization (ATRP). The formation of DT-PHEMA was confirmed by ¹H-NMR and FT-IR. The molecular weight and molecular weight distribution were found to be 9.6 kg/mol and 1.40 from GPC analysis. DT-PHEMA was subsequently used for the synthesis of PHEMA-g-AuNPs by a grafting to protocol. The grafting of DT-PHEMA on the surface of AuNPs was confirmed by FT-IR, TGA, XPS, and EDX analyses. The particle size of the PHEMA-g-AuNPs was found to be ca. 5.0 nm from HR-TEM analysis. Boronic acid was used for functionalization of PHEMA-g-AuNPs, which was then subjected for covalent immobilization with adenosine via strong interaction between free hydroxyl groups of adenosine and boronic acid. Characterization and properties of the Ado-i-PHEMA-g-AuNPs were investigated by taking advantage from FT-IR, XPS, EDX, and UV-visible spectroscopy. The Ado-i-PHEMA-g-AuNPs nanocomposite exhibits a surface plasmon resonance peak at 586 nm which is red shifted from AuNPs (521 nm), indicating significant changes of surface property upon PHEMA-adenosine immobilization onto the surface of AuNPs.     

Anode spot plasma deposition of insulating layers on aluminum

The deposition of an insulating layer upon an aluminum plate in an argon plasma is described. The process is effected in a low-power DC discharge to which a small amount of sulfur hexafluoride (SF₆) has been added, causing the formation of anode spots at sharp metallic surfaces. The insulator is deposited in the region beneath the spot