On the two dimensional effective electron mass in quantum wells,inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism. It has been found, taking InAs and InSb as examples, that the EEM in Qws, ILs and superlattices increases with increasing concentration, light intensity and wavelength of the incident light waves, respectively and the numerical magnitudes in each case is band structure dependent. The EEM in ILs is quantum number dependent exhibiting quantum jumps for specified values of the surface electric field and in NIPI superlattices; the same is the function of Fermi energy and the subband index characterizing such 2D structures. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the EEM varies in various manners with all the variables as evident from all the curves, the rates of variations totally depend on the specific dispersion relation of the particular 2D structure. Under certain limiting conditions, all the results as derived in this paper get transformed into well known formulas of the EEM and the electron statistics in the absence of external photo-excitation and thus confirming the compatibility test. The results of this paper find three applications in the field of microstructures.     

Sodium Bismuthate Mediated Oxidation of Allylic and Benzylic Alcohols

A simple and readily available oxidation of primary allylic and benzylic alcohols to the corresponding aldehydes is carried out by sodium bismuthate in acetic acid.     

Synthesis of 1-p-Methoxyphenyl and 1-p-Methoxyphenyl-4-methylbicyclo-[2.2.1]heptan-7-one. The Oxidation of 7-Hydroxy-1-p-methoxyphenyl-4-methylbicyclo[2.2.1]heptan-7-carboxylic Acid with Lead Tetraacetate

A simple synthetic route to 1-p-methoxyphenyl and 1-p-methoxyphenyl-4-methylbicyclo [2.2.1]heptan-7-one 6b,a has been developed through benzilic acid rearrangement of the bicyclo[2.2.1]octandiones 2b,a. The oxidation of 7-hydroxy-1-p-methoxyphenyl-4-methylbicyclo[2.2.1]heptan-7-carboxylic acid 3a with lead tetraacetate gives the carbolactone 7a which is also formed by the reaction of the ketone 6a with m-chloroperbenzoic acid.     

Synthesis of (±)-2-Methoxy-9a-Carbamorphinan and (±)-2-Methoxy-9a-Carba-14α-Morphinan: Acid Catalyzed Cyclizations of 1-m-Methoxybenzyl-4, 4a,5,6,7,8-Hexahydronaphthalen-2(3H)-ONE and 1 -m-Methox Ybenzyloctalins

The bridged-ethers, (±)-2-methoxy-9a-carbamorphinan (1b) and (±)-2-methoxy-9a-carba-14α-morphinan(2b) have been synthesized. The acid-catalyzed cyclizations of 1-m-methoxy benzyloctalone 3b and 1-m-methoxybenzyloctalins 4b proceed with high regio-and stereoselectivities leading mostly to the bridged-ketone 14 and ether 1b respectively, along with o-methoxy-tetracyclic ketone 15 and the ether 17, in addition to other minor products.     

Dynamics and Morphology of Holes in Dewetting of Thin Films

The formation and growth of holes in apolar nonslipping Newtonian thin films subjected to long-range Lifshitz-van der Waals forces are investigated based directly on numerical solutions of the thin-film equation. The nonphysical divergences of the hydrodynamic model and of the van der Waals force at the three-phase contact line are removed by inclusion of the short-range Born repulsion. Three distinct regimes of the hole growth after its appearance are identified: (1) a short, unsteady phase in which the dynamic contact angle and velocity change rapidly, followed by (2) a long, quasi-steady phase with slow logarithmic changes, and finally (3) a hindered phase in which rims of the neighboring holes overlap and lead to formation of equilibrium drops. The cross section of the rim surrounding a growing hole is noncircular and asymmetric, with higher slopes near the contact line. A slight depression is created ahead of the moving rim, but the regions of the film away from the rim remain undisturbed. For very viscous (e.g., polymeric) liquids displaying small contact angles, a nonlinear regime of hole growth (radius ~ timeq, with the exponent q approximately 0.7-0.9) is obtained for realistic time scales. Copyright 1999 Academic Press.     

Influence of magnetic quantization on the effective electron mass in Kane-type semiconductors

Summary We study the effective electron mass at the Fermi level in Kane-type semiconductors on the basis of fourth order in effective mass theory and taking into account the interactions of the conduction electrons, heavy holes, light holes and split-off holes, respectively. The results obtained are then compared to those derived on the basis of the well-known three-band Kane model. It is found, takingn-Hg_1−x Cd _x Te as an example, that the effective electron mass at the Fermi level in accordance with fourth-order model depends on the Fermi energy, magnetic quantum number and the electron spin respectively due to the influence of band nonparabolicity only. The dependence of effective mass on electron spin is due to spin-orbit splitting parameter of the valence band in three-band Kane model and the Fermi energy due to band nonparabolicity in two-band Kane model. The same mass exhibits an oscillatory magnetic-field dependence for all the band models as expected since the origin of oscillations in the effective mass in nonparabolic compounds is the same as that of the Shubnikov-de Hass oscillations. In addition, the corresponding results for parabolic energy bands have been obtained from the generalized expressions under certain limiting conditions.     

Acoustic NMR in spin-1 systems

Acoustic magnetic resonance, both pulsed and continuous has been discussed in terms of the Bloch-Wangsness-Redfield formulation of the magnetic resonance phenomenon. The quadrupolar mechanism has been taken for the spin-phonon coupling and the mutual interaction has been treated in the ‘effective field approximation’. The expressions for the power absorbed both for Δm=±1 and Δm=±2 have been obtained. It is found that from the measurements of the relaxation parameters for Δm=±1 and Δm=±2 it is possible to estimate the non-secular contributions to the line-width. The power absorbed in pulse excitation comes out to be small for short pulse (short compared to the relaxation parameter) and it reduces to the value obtained in continuous excitation for a long pulse. It is seen that for a given pulse-width the signal decreases with the increase of the relaxation parameter and this happens as temperature is lowered. The saturation of electromagnetic signal in presence of the acoustic excitation has also been studied. The analysis indicates that the relaxation parameter obtained from the plot of the relative signal (〈〉_ω/〈〉₀) vs the acoustic frequency ω, is always less than its true value which can be determined by observing the frequency dependence of the relative fractional signal defined as [(〈〉₀?〈〉_ω)/〈〉_ω]/[(〈〉₀?〈〉_2ω0)/〈〉_2ω0].     

Influence of alloy composition on the diffusivity-mobility ratio in n-channel inversion layers on ternary semiconductors

An expression is derived for the diffusivity-mobility ratio of the carriers in n-channel inversion layers on semiconductors like the ternary compounds which have strongly non-parabolic energy bands. The dependence of the ratio on alloy composition is also studied under the weak-field limit taking n-channel Hg_1–xCd_x.Te as an example.On leave of absence fromthe Department of Physics, Patna University, Patna, India.