Finding minimum areak-gons

Given a setP ofn points in the plane and a numberk, we want to find a polygon with vertices inP of minimum area that satisfies one of the following properties: (1) is a convexk-gon, (2) is an empty convexk-gon, or (3) is the convex hull of exactlyk points ofP. We give algorithms for solving each of these three problems in timeO(kn ³). The space complexity isO(n) fork=4 andO(kn ²) fork5. The algorithms are based on a dynamic programming approach. We generalize this approach to polygons with minimum perimeter, polygons with maximum perimeter or area, polygons containing the maximum or minimum number of points, polygons with minimum weight (for some weights added to vertices), etc., in similar time bounds.This paper includes work done while David Eppstein was at Columbia University, Department of Computer Science, and while Günter Rote and Gerhard Woeginger were at the Freie Universität Berlin, Fachbereich Mathematik, Institut für Informatik. Research was partially supported by the ESPRIT II Basic Research Actions Program of the EC under Contract No. 3075 (project ALCOM).     

Internal electron-positron pair production from electric monopole transitions

The yield curve of the reaction⁵⁶Fe(p,γ)⁵⁷Co has been measured over the energy rangeE _p =1,300–1,900 keV and the decay of nine resonances has been investigated. For twelve of the resonances the strengths have been determined. The angular distributions of the gamma rays have been recorded for resonances atE _p =1,599, 1,623, 1,643 and 1,649 keV, giving spin-parity assignmentsJ ^π=3/2^? for all four resonances. The resonances atE _p =1,623, 1,643 and 1,649 keV have been identified as the split analogue resonances of the 367 (J ^π=3/2^?) states in⁵⁷Fe. TheM1 transition strengths to the corresponding antianalogue states have been measured and compared with theoretical predictions.     

Kaon production in\bar pp interactions at c.m. energies from 200 to 900 GeV

A detailed analysis ofK _s ⁰ production in \(\bar pp\) |<2.5 the average transverse momentum is found to be 0.53±0.07 GeV/c at 200 GeV and 0.62±0.08 GeV/c at 900 GeV, which is an increase with respect to data at c.m. energies below 60 GeV. TheK _s ⁰ production cross sections in inelastic collisions are 29±4 mb at 200 GeV and 63±6 mb at 900 GeV, showing an increase compared to lower energy data. The central kaon density is found to increase as a logarithmic function of energy. At 900 GeV, where statistics are sufficient to allow one to draw conclusions, the average transverse momentum is higher in events with large charged multiplicity than in events with low multiplicity.     

Nanoscale probing of adsorbed species by tip-enhanced Raman spectroscopy

Tip-enhanced Raman spectroscopy (TERS) is based on the optical excitation of localized surface plasmons in the tip-substrate cavity, which provides a large but local field enhancement near the tip apex. We report on TERS with smooth single crystalline surfaces as substrates. The adsorbates were CN- ions at Au(111) and malachite green isothiocyanate (MGITC) molecules at Au(111) and Pt(110) using either Au or Ir tips. The data analysis yields Raman enhancements of about 4 x 10(5) for CN- and up to 10(6) for MGITC at Au(111) with a Au tip, probing an area of less than 100 nm radius.     

Coarse nonlinear dynamics and metastability of filling-emptying transitions: water in carbon nanotubes

Using a coarse-grained molecular dynamics (CMD) approach we study the apparent nonlinear dynamics of water molecules filling or emptying carbon nanotubes as a function of system parameters. Different levels of the pore hydrophobicity give rise to tubes that are empty, water-filled, or fluctuate between these two long-lived metastable states. The corresponding coarse-grained free-energy surfaces and their hysteretic parameter dependence are explored by linking MD to continuum fixed point and bifurcation algorithms. The results are validated through equilibrium MD simulations.     

Kinetic interface roughening and magneto resistance of sputter-deposited Fe/Ni75B25 multilayers

The roughening of interfaces as a function of layer thickness and magneto transport properties have been investigated on sputter-deposited Fe/Ni₇₅B₂₅ multilayer films. X-ray reflectivity data were recorded for Ni₇₅B₂₅(72 nm) film and for [Fe(2 nm)/Ni₇₅B₂₅(2 nm)]₁₆ and [Fe(4 nm)/Ni₇₅B₂₅(4 nm)]₈ multilayer films. A power law dependence of the interfacial width of growing Fe/Ni₇₅B₂₅ interfaces was observed. The resulting growth exponents β were found to be in the range of 0.55–0.58 in the initial growth stage of the multilayer with lower Fe/Ni₇₅B₂₅ repetition thickness and at approximately 0.34 for multilayer with higher repetition thickness. The growth exponents were compared with theoretical calculations. High resolution electron microscopy revealed the columnar growth of the Fe/Ni₇₅B₂₅ multilayer. Additionally, an increase of magnetoresistance was observed by the multilayering of Ni₇₅B₂₅ films with Fe interlayers.     

A cross-spectrum weighting algorithm for speech enhancement and array processing: combining phase-shift information and stationary signal properties

In this paper, a gain function for noise cancellation with a two-channel microphone array is presented. This gain function combines ideas from one- and multichannel algorithms. It is developed using a minimum mean square error estimator for the amplitude of the speech signal from the cross spectrum between two microphone signals. To consider speech pauses and the absence of spectral components of the speech, an extension of this gain function is presented. The performance of the overall gain function is shown in terms of the cancellation of (diffuse) driving noise as well as the cancellation of an interfering speech signal, both recorded in a car.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Deterministic single-photon source for distributed quantum networking

A sequence of single photons is emitted on demand from a single three-level atom strongly coupled to a high-finesse optical cavity. The photons are generated by an adiabatically driven stimulated Raman transition between two atomic ground states, with the vacuum field of the cavity stimulating one branch of the transition, and laser pulses deterministically driving the other branch. This process is unitary and therefore intrinsically reversible, which is essential for quantum communication and networking, and the photons should be appropriate for all-optical quantum information processing.