Photonic band gap from periodic structures containing anisotropic nonmagnetic left-handed metamaterial

<正>We demonstrate a photonic band gap(PBG) from one-dimensional(1D) periodic structures created by a double-layer unit cell with an air layer and an anisotropic nonmagnetic left-handed metamaterial(LHM) layer whose permittivity elements are partially negative.The requirements imposed on the materials and structures to realize a PBG are derived when the frequency is above or below the cutoff frequency,and the transmission properties of the PBG are discussed by utilizing 4×4 transfer-matrix method with dispersive semiconductor metamaterial.     

Equilibrium points and bifurcation control of a chaotic system

Based on the Routh-Hurwitz criterion, this paper investigates the stability of a new chaotic system. State feedback controllers are designed to control the chaotic system to the unsteady equilibrium points and limit cycle. Theoretical analyses give the range of value of control parameters to stabilize the unsteady equilibrium points of the chaotic system and its critical parameter for generating Hopf bifurcation. Certain nP periodic orbits can be stabilized by parameter adjustment. Numerical simulations indicate that the method can effectively guide the system trajectories to unsteady equilibrium points and periodic orbits.     

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550°C to 700°C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100°C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600°C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600°C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600°C, the Hall mobility achieves up to 938 cm²/Vs with electron concentration of 3.9 × 10¹⁸ cm⁻³. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Natural Science Foundation of China (Grant Nos. 6039072, 60476030 and 60421003), the Great Fund of the Ministry of Education of China (Grant No. 10416), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004), and the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2005210 and BK2006126)     

Study on the optical limiting properties of the mixed liquid of carbon black suspensions and green tea solution by multi-pulse laser

The optical limiting properties of the mixed liquid of carbon black suspensions (CBS) and green tea solution were studied by using an 8 ns laser pulse at 532\,nm. The optical limiting effects of the CBS and mixed liquid have been compared between 5 and 10\,Hz repetition frequencies with nanosecond laser pulse. The experimental results indicate that the optical limiting threshold of the sample with the incidence laser at 10\,Hz repetition frequency is lower than at 5\,Hz repetition frequency. The possible reasons for the influence of the repetition frequency on the samples are discussed. And by observing the optical radiant distributions when the laser pulse passing through different samples, a possible mechanism for the observed effects is suggested. At the same time, the result shows that the optical limiting of CBS is the dominant factor to optical limiting of the mixed liquid.     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.     

Synchronization of stochastically hybrid coupled neural networks with coupling discrete and distributed time-varying delays

A general model of linearly stochastically coupled identical connected neural networks with hybrid coupling is proposed, which is composed of constant coupling, coupling discrete time-varying delay and coupling distributed timevarying delay. All the coupling terms are subjected to stochastic disturbances described in terms of Brownian motion, which reflects a more realistic dynamical behaviour of coupled systems in practice. Based on a simple adaptive feedback controller and stochastic stability theory, several sufficient criteria are presented to ensure the synchronization of linearly stochastically coupled complex networks with coupling mixed time-varying delays. Finally, numerical simulations illustrated by scale-free complex networks verify the effectiveness of the proposed controllers.     

Two-vibron bound states in the β--Fermi--Pasta--Ulam model

This paper studies the two-vibron bound states in the β- Fermi Pasta-Ulam model by means of the number conserving approximation combined with the number state method. The results indicate that on-site, adjacent-site and mixed two-vibron bound states may exist in the model. Specially, wave number has a significant effect on such bound states, which may be considered as the quantum effects of the localized states in quantum systems.     

Short Tm3+-doped fiber lasers with watt-level output near 2 μm

High-power operation of diode-pumped fiber lasers at wavelength near 2μm are demonstrated with short length of heavily Tm3 -doped silica glass fibers. With 7-cm long fiber, a laser at near 2 μm is obtained with the threshold of 135 mW, maximum output power of 1.09 W, and slope efficiency of 9.6% with respect to the launched power from a laser diode at 790 nm. The output stability of this fiber laser is within 5%.The dependence of the performance of fiber lasers on the operation temperature and cavity configuration parameters is also investigated.     

锰位铁掺杂La0.67Sr0.33FexMn1-xO3薄膜的光诱导效应

分别采用溶胶-凝胶法和脉冲激光沉积的方法制备了La_067Sr_033Fe_xMn_1-xO₃(x=0, 005, 010, 015)系列块材和薄膜，研究了Fe部分替代对La_067Sr_033Fe_xMn_1-xO₃薄膜     

Intracavity optical parametric oscillator at 1.57-μm wavelength pumped by passive Q-switched Nd：GdVO4 laser

A high-repetition-rate eye-safe optical parametric oscillator （OPO）, using a non-critically phase-matched KTP crystal intracavity pumped by a passively Q-switched Nd：GdVO4/Cr^4＋ ：YAG laser, is experimentally demonstrated. The conversion efficiency for the average power is 7% from pump diode input to OPO signal output and the slope efficiency is up to 10.3%. With an incident pump power of 7,3 W, the compact intracavity OPO （IOPO） cavity, operating at 15 kHz, produces an average power of 0.57 W at 1570 nm with a pulse width as short as 6 ns. The peak power at 1570 nm is higher than 6.3 kW.