Role of Impurity Precipitates on Microhardness of KBr:Ba2+ Crystals

Microhardness of KBr crystals doped with various concentration of Ba²⁺ have been investigated in the asgrown state and after quenching from various elevated temperatures. It is observed that hardness increases with increase in impurity concentration and at high concentration the hardness starts decreasing. Microstructural investigations have showed the formation of visible precipitates at high concentrations. The heat treatment studies showed that in crystals quenched from elevated temperatures the visible precipitates dissociate and hardness increases.     

Electrical transport properties of CdTe:Sb films

Hall coefficient and dc conductivity measurements are made on p-type CdTe:Sb films grown by vacuum evaporation technique on glass substrate. The grain boundary potential barrier, which is found mainly to limit the mobility of carriers is calculated as a function of film thickness. The n-type conduction is found to dominate over p-type conduction above about 330 K. The ratio of electron to hole mobility is also calculated.     

Microhardness studies on some compound semiconductors

Vickers microhardness studies on some III–V and II–VI compound semiconductors have been made. The results showed that ZnS has the highest microhardness value. These results are compared with other properties of the crystals such as melting point, ionicity etc. Variation of microhardness with load was also studied on all the crystals. The results indicated that the hardness value increases at low loads. These results have been analysed by using resistance pressure model and interpreted.     

Dielectric and electrical studies on as-grown CeO2 films

Thin film capacitors of CeO₂ were fabricated by thermal evaporation. The dielectric properties of these films were studied in the frequency range 0.05–16 KHz at various temperatures, starting from liquid nitrogen temperature to 390 K. The effect of annealing on capacitance and tan δ were studied for different frequencies. The behaviour was explained on the basis of relief in strain energy. The plot between current density and temperature was drawn, and from the slope of the plot the activation energy was calculated and found to be 0.52 ev. The results were discussed.     

Electrical properties of Al-CeO2-Al thin film capacitor structures

Cerium Oxide films were prepared by vacuum thermal evaporation from tantalum boat in a conventional vacuum coating unit. Current-voltage characteristics were studied for different film thicknesses. The breakdown voltage (V_B) and dielectric field strength (E_B) were calculated. It is found that the breakdown voltage increases and dielectric field strength decreases as the thickness of the film increases. The applicability of Forlani-Minnaja relation is discussed. Current-voltage characteristics were also drawn at different temperatures and breakdown voltages were calculated. The breakdown voltage decreases as the temperature of the structure increases but the variation is nonlinear. The variation of current density with temperature was studied and the activation energy for the migration of charge carriers was calculated and it is about 0.52 ev. The results were discussed.     

Thermo emf studies on CdTe:Sb Thin Films

Thermal transport properties have been studied on as-grown and annealed CdTe:Sb thin films of different thicknesses and concentrations of Sb. These films were prepared by sequential vacuum deposition of CdTe and Sb on clean and hot glass substrates held at 210 °C temperature at a constant rate of deposition. From these studies all the films were found to be p-type. It is also observed that the thermoelectric power increases with Sb concentgration, thickness of the film and with annealing process. Fermi-energy variation with temperature have been calculated on the basis of thermo emf data. All these results have been explained on the basis of defects introduced by Sb doping.     

Measurement of στ product of solid state laser materials by an alternative method: Application to Nd3+ doped YVO4 crystal for 4 F 3/2→4 I 11/2 transition

In this paper an alternative approach for measurement of στ product for ⁴ F _3/2→⁴ I _11/2 transition of Nd³⁺ doped YVO₄ crystal is reported. In this method a microchip laser is formed by keeping a small piece of the sample in plane-plane resonator and a diode laser (808 nm) is used for pumping. The pump power induced thermal lensing effect is used to make the cavity stable. The cavity mode area is estimated by measuring the thermal lens focal length at the threshold and the average pump area is measured by Gaussian fit to the intensity profiles of the pump beam. The value of στ product of Nd:YVO₄ crystal obtained by this method is within 10% of the reported values. The advantage of this method is that it is a simple method for direct measurement of στ product of laser crystals.     

Anomalous elastic behaviour of Bi-Pb-Ag composites

Bi-Pb and Bi-Pb-Ag superconducting composites have been prepared by the solid state reaction method. After the usual characterization, ultrasonic longitudinal velocity and attenuation studies have been undertaken over a temperature range 80–300 K by the pulse transmission technique. In contrast to normal solids, the ultrasonic velocities of both the samples in the temperature range 200-100 K are found to decrease with decreasing temperature (softening), followed by a velocity maximum. The samples are also found to exhibit longitudinal attenuation peaks at TEMPERATURES = 260, 160 and 120 K. An attempt has also been made to verify whether the Wachtman's equations can theoretically explain the low-temperature behaviour of the Young's modulus of these materials. A qualitative explanation for both the phenomena of softening of velocity as well as the occurrence of attenuation peaks is given.     

Comparison of Gelfand-Tsetlin Bases for Alternating and Symmetric Groups

Young’s orthogonal basis is a classical basis for an irreducible representation of a symmetric group. This basis happens to be a Gelfand-Tsetlin basis for the chain of symmetric groups. It is well-known that the chain of alternating groups, just like the chain of symmetric groups, has multiplicity-free restrictions for irreducible representations. Therefore each irreducible representation of an alternating group also admits Gelfand-Tsetlin bases. Moreover, each such representation is either the restriction of, or a subrepresentation of, the restriction of an irreducible representation of a symmetric group. In this article, we describe a recursive algorithm to write down the expansion of each Gelfand-Tsetlin basis vector for an irreducible representation of an alternating group in terms of Young’s orthogonal basis of the ambient representation of the symmetric group. This algorithm is implemented with the Sage Mathematical Software.