Three-Way Decision Models Based on Ideal Relations in Multi-Attribute Decision-Making

In recent years, research on applications of three-way decision (e.g., TWD) has attracted the attention of many scholars. In this paper, we combine TWD with multi-attribute decision-making (MADM). First, we utilize the essential idea of TOPSIS in MADM theory to propose a pair of new ideal relation models based on TWD, namely, the three-way ideal superiority model and the three-way ideal inferiority model. Second, in order to reduce errors caused by the subjectivity of decision-makers, we develop two new methods to calculate the state sets for the two proposed ideal relation models. Third, we employ aggregate relative loss functions to calculate the thresholds of each object, divide all objects into three different territories and sort all objects. Then, we use a concrete example of building appearance selection to verify the rationality and feasibility of our proposed models. Furthermore, we apply comparative analysis, Spearman’s rank correlation analysis and experiment analysis to illustrate the consistency and superiority of our methods.     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

Load optimal design for a primary test stand facility based on a zero-dimensional load model

In order to couple the numerical simulation of a primary test stand driver with an optimal load design, a zero-dimensional wire array load model is designed based on the Saturn load model using PSPICE, which is an upgraded version of the Simulation Program with Integrated Circuit Emphasis (SPICE) designed by the ORCAD Corporation to perform circuit simulations. This paper calculates different load parameters and discusses factors influencing the driving current curve. With appropriate driving current curves chosen, further magneto-hydrodynamic calculations are carried out and discussed to provide the best results for experiments. The suggested optimal load parameters play an important role in experimental load design.     

热流计校准装置自适应温度控制方法研究

以热流计校准装置为研究对象,建立了热板温度仿真模型。根据模糊控制原理和BP神经网络原理,分别设计了模糊PID控制器和BP神经网络PID控制器,并在Matlab的Simulink下进行了不同控制方法的仿真对比实验。仿真结果表明:模糊PID有更快的响应速度、更短的稳定时间,BP神经网络PID有更小的超调量。     

Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs

Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga_1−xAl_xAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga_1−xAl_xAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga_1−xAl_xAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces.     

一种电流引线的热力学计算方法

从超导磁体气冷电流引线的热平衡方程出发,对电流引线进行分段,提出了一种较为精确计算电流引线长横比及由电流引线末端流入低温容器热量的计算方法;电流引线中氦气流阻是设计电流引线时一个很重要的参数,由于电流引线片形状很复杂,计算其中氦气流阻比较好的方法是采用CFD软件Fluent。氦气模型单元数很庞大,因此对氦气模型进行了简化和分段,相邻两段模型间采用流量和压力边界条件进行耦合。     

非即变相位共轭反馈对半导体激光器动态特性的影响

从四波混频产生相位共轭的物理原因出发,定义了相位共轭镜（PCM）的响应时间．建立起非即变相位共轭反馈条件下半导体激光器的外腔模型。以响应时间及频率失调为参变量,对其分岔及噪声等动态行为进行数值分析。结果表明,不考虑噪声影响时,增加相位共轭镜响应时间会使混沌带出现的次数和范围得到较大的抑制,当响应时间增大到1．5ns时,混沌带消失,半导体激光器保持稳定的单周期状态;考虑噪声影响后,随若响应时间的相对强度噪声（RIN）可减小几dB甚至十几dB,产生突变需要的反馈量也增大一个数量级以上,且其频谱的峰值向高频方向移动;另外,由于共轭反馈引起的频率失调低于半导体激光器激射频率3个数量级以上．它只对分岔特性有影响．对相对强度噪声的影响几乎为零。     

Influence of cesium on the stability of a GaAs photocathode

The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature.We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current,and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode.We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode.Our results support the double dipolar model for the explanation of the negative electron affinity effect.     

DFT Investigations of Aun Nano-Clusters Supported on TiO2 Nanotubes: Structures and Electronic Properties

TiO₂ nanotubes (TiO₂NTs) are beneficial for photogenerated electron separation in photocatalysis. In order to improve the utilization rate of TiO₂NTs in the visible light region, an effective method is to use Au_n cluster deposition-modified TiO₂NTs. It is of great significance to investigate the mechanism of Au_n clusters supported on TiO₂NTs to strengthen its visible-light response. In this work, the structures, electronic properties, Mulliken atomic charge, density of states, band structure, and deformation density of Au_n (n = 1, 8, 13) clusters supported on TiO₂NTs were investigated by DMOL3. Based on published research results, the most stable adsorption configurations of Au_n (n = 1, 8, 13) clusters supported with TiO₂NTs were obtained. The adsorption energy increased as the number of Au adatoms increased linearly. The Au_n clusters supported on TiO₂NTs carry a negative charge. The band gaps of the three most stable structures of each adsorption system decreased compared to TiO₂NTs; the valence top and the conduction bottom of the Fermi level come mainly from the contribution of 5d and 6s-Au. The electronic properties of the 5d and 6s impurity orbitals cause valence widening and band gap narrowing.